scholarly journals Two-dimensional aluminum phosphide semiconductor with tunable direct band gap for nanoelectric applications

RSC Advances ◽  
2020 ◽  
Vol 10 (42) ◽  
pp. 25170-25176
Author(s):  
Xuxin Yang ◽  
Caixia Mao ◽  
Yonghong Hu ◽  
Hui Cao ◽  
Yuping Zhang ◽  
...  
Keyword(s):  
Band Gap ◽  
2D Materials ◽  
Two Dimensional ◽  
Aluminum Phosphide ◽  
Direct Band Gap ◽  
Nanoelectronic Devices ◽  
Direct Band

More and more attractive applications of two-dimensional (2D) materials in nanoelectronic devices are being achieved successfully, which promotes the rapid and extensive development of new 2D materials.

scholarly journals Ultrawide range tuning of direct band gap in MgZnO monolayer via electric field effect

RSC Advances ◽  
2018 ◽  
Vol 8 (3) ◽  
pp. 1392-1397 ◽  
Author(s):  
Hongfei Chen ◽  
Changlong Tan ◽  
Dan Sun ◽  
Wenbin Zhao ◽  
Xiaohua Tian ◽  
...  
Keyword(s):  
Electric Field ◽  
Band Gap ◽  
Field Effect ◽  
2D Materials ◽  
Optoelectronic Devices ◽  
Building Blocks ◽  
Electric Field Effect ◽  
Two Dimensional ◽  
Direct Band Gap ◽  
Direct Band

Two-dimensional (2D) materials are building blocks for the next generation of electronic and optoelectronic devices.

scholarly journals Theoretical investigations of a new two-dimensional semiconducting boron–carbon–nitrogen structure

RSC Advances ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 3424-3428
Author(s):  
Yihua Lu ◽  
Xi Zhu ◽  
Min Wang
Keyword(s):  
Band Gap ◽  
Two Dimensional ◽  
Direct Band Gap ◽  
Theoretical Investigations ◽  
Direct Band ◽  
Optical Applications ◽  
Boron Carbon

A predicted 2D BCN structure has a direct band gap and is a good candidate for electronic and optical applications.

Two-Dimensional Hydroxyl-Functionalized and Carbon-Deficient Scandium Carbide, ScCxOH, a Direct Band Gap Semiconductor

ACS Nano ◽  
2019 ◽  
Author(s):  
Jie Zhou ◽  
Xian-Hu Zha ◽  
Melike Yildizhan ◽  
Per Eklund ◽  
Jianming Xue ◽  
...  
Keyword(s):  
Band Gap ◽  
Two Dimensional ◽  
Direct Band Gap ◽  
Direct Band

Novel electronic properties of two-dimensional AsxSby alloys studied using DFT

2018 ◽  
Vol 6 (11) ◽  
pp. 2854-2861 ◽  
Author(s):  
N. Zhao ◽  
Y. F. Zhu ◽  
Q. Jiang
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Effective Mass ◽  
Two Dimensional ◽  
Direct Band Gap ◽  
Direct Band

Monolayered α-AsxSby alloys harbor the direct band gap and the low effective mass in the certain component.

scholarly journals Theoretical Prediction of the Structural and Electronic Properties of a Single Layer Graphene-like Two-dimensional Janus GaInSTe

2021 ◽  
Vol 37 (2) ◽  
Author(s):  
Nguyen Van Chuong ◽  
Nguyen Ngoc Hieu ◽  
Nguyen Van Hieu
Keyword(s):  
Electric Field ◽  
Band Gap ◽  
Electronic Properties ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Two Dimensional ◽  
Direct Band Gap ◽  
Structural And Electronic Properties ◽  
Direct Band ◽  
New Type

This paper constructs a new type of two-dimensional graphene-like Janus GaInSTe monolayer and systematically investigates its structural and electronic properties as well as the effect of external electric field using first-principles calculations. In the ground state, Janus GaInSTe monolayer is dynamically stable with no imaginary frequencies in its phonon spectrum and possesses a direct band gap semiconductor. The band gap of Janus GaInSTe monolayer can be tuned by applying an electric field, which leads the different transitions from semiconductor to metal, and from indirect to direct band gap. These findings show a great potential application of Janus GaInSTe material for designing next-generation devices.

scholarly journals CVD controlled growth of large-scale WS2 monolayers

RSC Advances ◽  
2019 ◽  
Vol 9 (51) ◽  
pp. 29628-29635 ◽  
Author(s):  
Zhuhua Xu ◽  
Yanfei Lv ◽  
Jingzhou Li ◽  
Feng Huang ◽  
Pengbo Nie ◽  
...  
Keyword(s):  
Band Gap ◽  
Large Scale ◽  
Tungsten Disulfide ◽  
Controlled Growth ◽  
Two Dimensional ◽  
Direct Band Gap ◽  
Direct Band

Monolayer tungsten disulfide (WS2) with a direct band gap of ca. 2.0 eV and stable properties has been a hotspot in two-dimensional (2D) nanoelectronics and optoelectronics.

Penta-MX2 (M = Ni, Pd and Pt; X = P and As) monolayers: direct band-gap semiconductors with high carrier mobility

2019 ◽  
Vol 7 (12) ◽  
pp. 3569-3575 ◽  
Author(s):  
Shifeng Qian ◽  
Xiaowei Sheng ◽  
Xian Xu ◽  
Yuxiang Wu ◽  
Ning Lu ◽  
...  
Keyword(s):  
Band Gap ◽  
First Principles ◽  
Carrier Mobility ◽  
Two Dimensional ◽  
First Principles Calculations ◽  
Ring Network ◽  
Direct Band Gap ◽  
Direct Band ◽  
High Carrier Mobility ◽  
High Carrier

Two-dimensional binary MX2 (M = Ni, Pd and Pt; X = P and As) exhibiting a beautiful pentagonal ring network is discussed through first principles calculations.

B2N Monolayer: a Direct Band-Gap Semiconductor with High and Highly Anisotropic Carrier Mobility

Nanoscale ◽  
2021 ◽  
Author(s):  
Shuyi Lin ◽  
Yu Guo ◽  
Meiling Xu ◽  
Jijun Zhao ◽  
Yiwei Liang ◽  
...  
Keyword(s):  
Band Gap ◽  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistors ◽  
Two Dimensional ◽  
Planar Lattice ◽  
Direct Band Gap ◽  
Two Dimensional Materials ◽  
Direct Band

Two-dimensional materials with a planar lattice, a suitable direct band-gap, high and highly anisotropic carrier mobility are desirable for the development of advanced field-effect transistors. Here we predict three thermodynamically...

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