scholarly journals Bandgap engineering of few-layered MoS2 with low concentrations of S vacancies

RSC Advances ◽  
2020 ◽  
Vol 10 (27) ◽  
pp. 15702-15706 ◽  
Author(s):  
Wen He ◽  
Jia Shi ◽  
Hongkang Zhao ◽  
Hui Wang ◽  
Xinfeng Liu ◽  
...  
Keyword(s):  
Band Gap ◽  
Molybdenum Disulfide ◽  
Bandgap Engineering ◽  
Band Gap Engineering ◽  
Low Concentrations ◽  
Optoelectronic Applications ◽  
Layered Mos2

Band-gap engineering of molybdenum disulfide (MoS2) by introducing vacancies is of particular interest owing to the potential optoelectronic applications.

Role of 4p-3d orbital hybridization on band gap engineering of heavy metal glass for optoelectronic applications

2014 ◽  
Vol 605 ◽  
pp. 157-163 ◽  
Author(s):  
Fouad El-Diasty ◽  
F.A. Moustafa ◽  
F.A. Abdel-Wahab ◽  
M. Abdel-Baki ◽  
A.M. Fayad
Keyword(s):  
Heavy Metal ◽  
Band Gap ◽  
Band Gap Engineering ◽  
Orbital Hybridization ◽  
Optoelectronic Applications

Se concentration dependent band gap engineering in ZnO1-xSex thin film for optoelectronic applications

2014 ◽  
Vol 585 ◽  
pp. 94-97 ◽  
Author(s):  
Jae-chul Lee ◽  
Ji-eun Lee ◽  
Ju-won Lee ◽  
Jae-choon Lee ◽  
N.G. Subramaniam ◽  
...  
Keyword(s):  
Thin Film ◽  
Band Gap ◽  
Band Gap Engineering ◽  
Optoelectronic Applications

Band Gap Engineering and Layer-by-Layer Mapping of Selenium-Doped Molybdenum Disulfide

Nano Letters ◽  
2013 ◽  
Vol 14 (2) ◽  
pp. 442-449 ◽  
Author(s):  
Yongji Gong ◽  
Zheng Liu ◽  
Andrew R. Lupini ◽  
Gang Shi ◽  
Junhao Lin ◽  
...  
Keyword(s):  
Band Gap ◽  
Molybdenum Disulfide ◽  
Layer By Layer ◽  
Band Gap Engineering

scholarly journals Orbital controlled band gap engineering of tetragonal BiFeO3 for optoelectronic applications

2018 ◽  
Vol 6 (5) ◽  
pp. 1239-1247 ◽  
Author(s):  
L. Qiao ◽  
S. Zhang ◽  
H. Y. Xiao ◽  
D. J. Singh ◽  
K. H. L. Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Band Gap ◽  
Bismuth Ferrite ◽  
Ferroelectric Material ◽  
Band Gap Engineering ◽  
Photovoltaic Applications ◽  
Optoelectronic Applications

Bismuth ferrite BiFeO3 (BFO) is an important ferroelectric material for thin-film optoelectronic sensing and potential photovoltaic applications.

Single Layer Molybdenum Disulfide under Direct Out-of-Plane Compression: Low-Stress Band-Gap Engineering

Nano Letters ◽  
2015 ◽  
Vol 15 (5) ◽  
pp. 3139-3146 ◽  
Author(s):  
Miriam Peña-Álvarez ◽  
Elena del Corro ◽  
Ángel Morales-García ◽  
Ladislav Kavan ◽  
Martin Kalbac ◽  
...  
Keyword(s):  
Band Gap ◽  
Molybdenum Disulfide ◽  
Single Layer ◽  
Band Gap Engineering ◽  
Out Of Plane ◽  
Plane Compression

scholarly journals Ultra-violet to visible band gap engineering of cubic halide KCaCl3 perovskite under pressure for optoelectronic applications: insights from DFT

RSC Advances ◽  
2021 ◽  
Vol 11 (58) ◽  
pp. 36367-36378
Author(s):  
Muhtasim Ali Haq ◽  
Md Saiduzzaman ◽  
Tariqul Islam Asif ◽  
Ismile Khan Shuvo ◽  
Khandaker Monower Hossain
Keyword(s):  
Band Gap ◽  
Visible Region ◽  
Ultra Violet ◽  
Optoelectronic Device ◽  
Electronic Band ◽  
Band Gap Engineering ◽  
Visible Band ◽  
Device Efficiency ◽  
Electronic Band Gap ◽  
Optoelectronic Applications

The electronic band gap shrinks from the UV to visible region of cubic halide KCaCl3 perovskite under pressure, making it easier to move electrons from the VB to the CB, which improves optoelectronic device efficiency.

Temperature-dependent study of GaAs1−x−y N x Bi y alloys for band-gap engineering: photoreflectance and k · p modeling

2020 ◽  
Vol 13 (9) ◽  
pp. 091005
Author(s):  
Wiktor Żuraw ◽  
Wojciech M. Linhart ◽  
Jordan Occena ◽  
Tim Jen ◽  
Jared. W. Mitchell ◽  
...  
Keyword(s):  
Band Gap ◽  
Temperature Dependent ◽  
Band Gap Engineering ◽  
Temperature Dependent Study
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