scholarly journals Optical properties of SrF2 and SrF2:Ce3+ crystals codoped with In3+

RSC Advances ◽  
2020 ◽  
Vol 10 (24) ◽  
pp. 13992-13997
Author(s):  
Alexandra Myasnikova ◽  
Roman Shendrik ◽  
Alexander Bogdanov
Keyword(s):  
Optical Properties ◽  
Conduction Band ◽  
Luminescence Center ◽  
Electron Traps

In3+ states are located close to electron traps and have a band character, the transfer of electrons from conduction band to the luminescence center is possible without significant trapping which facilitates fast luminescence in SrF2:Ce3+,In3+.

POLARIZATION PROPERTIES OF SYNCHROTRON RADIATION IN THE STUDY OF ANISOTROPIC INSULATING CRYSTALS

2002 ◽  
Vol 09 (01) ◽  
pp. 469-472
Author(s):  
V. N. KOLOBANOV ◽  
I. A. KAMENSKIKH ◽  
V. V. MIKHAILIN ◽  
I. N. SHPINKOV ◽  
D. A. SPASSKY ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Optical Properties ◽  
Energy Transfer ◽  
Synchrotron Radiation ◽  
Valence Band ◽  
Conduction Band ◽  
Electronic States ◽  
Absorption Region ◽  
New Information ◽  
Fundamental Absorption Region

The optical properties of a wide series of the tungstates with the scheelite and wolframite crystal structure at the threshold of the fundamental absorption region were studied. New information about the influence of the electronic states forming the bottom of the conduction band and the top of the valence band on the formation of emission centers and mechanisms of energy transfer to these centers was obtained.

Exploring Burstein–Moss type effects in nickel doped hematite dendrite nanostructures for enhanced photo-electrochemical water splitting

2019 ◽  
Vol 21 (36) ◽  
pp. 20463-20477 ◽  
Author(s):  
Soniya Gahlawat ◽  
Jaspreet Singh ◽  
Ashok Kumar Yadav ◽  
Pravin P. Ingole
Keyword(s):  
Optical Properties ◽  
Band Gap ◽  
Water Splitting ◽  
Conduction Band ◽  
Optical Band Gap ◽  
Doped Semiconductors ◽  
Electrochemical Water Splitting

The Burstein–Moss suggests which that the optical band gap of degenerately doped semiconductors increases when all states close to the conduction band get populated is important to obtain different optical properties for the same material.

scholarly journals Optical properties of nanocrystal films: blue shifted transitions as signature of strong coupling

2020 ◽  
Vol 2 (1) ◽  
pp. 384-393
Author(s):  
Erik S. Skibinsky-Gitlin ◽  
Salvador Rodríguez-Bolívar ◽  
Marco Califano ◽  
Francisco M. Gómez-Campos
Keyword(s):  
Optical Properties ◽  
Band Gap ◽  
Strong Coupling ◽  
Conduction Band ◽  
Red Shift ◽  
Nanocrystal Films ◽  
Interdot Coupling

Large blue shifts in the intra-conduction-band transitions and the red shift of the band gap absorption are both the manifestation of strong interdot coupling in the film.

The optical properties and chemical decomposition of lead iodide

1964 ◽  
Vol 280 (1383) ◽  
pp. 566-585 ◽  
Keyword(s):  
Optical Properties ◽  
Absorption Spectrum ◽  
Valence Band ◽  
Conduction Band ◽  
Electron Irradiation ◽  
Irradiation Damage ◽  
Lead Iodide ◽  
Chemical Decomposition ◽  
Excitation Processes ◽  
Split Valence

The optical properties of lead iodide have been measured and the fundamental absorption spectrum is interpreted in terms of ionization and excitation processes. These processes may be regarded as transitions from a split valence band to the conduction band and to exciton levels lying above and below the minimum of the conduction band. This inter­pretation is supported by measurements of photoconductivity and photodecomposition. Two mechanisms are suggested to explain the occurrence of photodecomposition and electron irradiation damage in this substance.

scholarly journals Nanowired structure, optical properties and conduction band offset of RF magnetron-deposited n-Si\In2O3:Er films.

2020 ◽  
Vol 7 (12) ◽  
pp. 125903
Author(s):  
K V Feklistov ◽  
A G Lemzyakov ◽  
I P Prosvirin ◽  
A A Gismatulin ◽  
A A Shklyaev ◽  
...  
Keyword(s):  
Optical Properties ◽  
Conduction Band ◽  
Band Offset ◽  
Conduction Band Offset

ELECTRONIC AND OPTICAL PROPERTIES OF MgV0.125Al1.875O4 BY FIRST PRINCIPLES

2009 ◽  
Vol 23 (06n07) ◽  
pp. 1701-1706
Author(s):  
MEILING LI ◽  
FENGJIU SUN
Keyword(s):  
Optical Properties ◽  
Charge Transfer ◽  
Conduction Band ◽  
Influencing Factor ◽  
Optical Excitation ◽  
Electronic And Optical Properties ◽  
Optical Process ◽  
Charge Transfer Transitions ◽  
Specific Rule ◽  
D Orbitals

The electronic and optical properties of MgV 0.125 Al 1.875 O 4 are investigated by use of the first principle. The calculated results indicate that the V -doped compound is semiconductor with a small gap 0.2102eV. It is concluded that the doping element V has specific rule in the MgAl 2 O 4 spinel, which leads it showing finite value DOS at the Fermi level and makes the total DOS gaps smaller than that of MgAl 2 O 4. In MgV 0.125 Al 1.875 O 4, the influencing factor on the optical process is that the 3d orbitals of V ion are highly localized and the part of 3d bands well incorporate into the conduction band, which very benefit to charge transfer transitions between O 2 p orbitals to the hybridized V 3 d orbitals near the conduction band. The absorption intensifies in the visible zone due to the V doping. The charge-transfer transitions around 282nm and 433nm between V and O are attributed to the optical excitation and deexcitation process, respectively, in agreement with experimental observations.

Preparation of BaSnO3 and Ba0.96La0.04SnO3 by reactive core–shell precursor: formation process, CO sensitivity, electronic and optical properties analysis

RSC Advances ◽  
2016 ◽  
Vol 6 (30) ◽  
pp. 25379-25387 ◽  
Author(s):  
Chuande Huang ◽  
Xiaodong Wang ◽  
Xueyan Wang ◽  
Xin Liu ◽  
Quan Shi ◽  
...  
Keyword(s):  
Optical Properties ◽  
Conduction Band ◽  
Formation Process ◽  
Core Shell ◽  
Electronic And Optical Properties ◽  
Band Filling ◽  
La Doped

A facile method for preparing pure and La doped BaSnO3 by reactive core–shell precursor was proposed and clear evidence of conduction band filling in La doped BaSnO3 was presented.

First-Principle Study of the Electronic and Optical Properties of Ti Doped ZnS

2012 ◽  
Vol 430-432 ◽  
pp. 173-176 ◽  
Author(s):  
Chang Peng Chen ◽  
Jian Xiong Xie ◽  
Jia Fu Wang
Keyword(s):  
Optical Properties ◽  
Fermi Level ◽  
Conduction Band ◽  
Electronic Structures ◽  
Density Functional ◽  
Band Gaps ◽  
First Principle ◽  
Level Shifts ◽  
Calculation Results ◽  
Impurity Elements

Based on the density functional pseudopotential method, the electronic structures and the optical properties for Ti doped ZnS are investigated in detail. The calculation results indicate that the doping of Ti widens the band gap of ZnS and the Fermi level shifts upward into the conduction band. The impurity elements form new highly localized impurity energy level at the bottom of the conduction band near the Fermi level.,.Meanwhile, blue shifts are revealed in both the imaginary part of dielectric function and the absorption spectra corresponding to the change of band gaps.

Effects of Strain on Optical Properties of BiFeO3: A First-Principles Study

2016 ◽  
Vol 703 ◽  
pp. 224-229
Author(s):  
Zhen Ye Zhu ◽  
Si Qi Wang ◽  
Qian Wang
Keyword(s):  
Optical Properties ◽  
Conduction Band ◽  
First Principles ◽  
State Density ◽  
Low Energy ◽  
Optical Absorption Coefficient ◽  
First Principles Calculations ◽  
Photovoltaic Application ◽  
Density Peaks ◽  
Optical Applications

In order to investigate the effects of strain on optical properties of BiFeO3, electronic structure, dielectric properties and optical properties of BiFeO3 under different strain conditions were performed by first-principles calculations. Results show that the optical spectra of BiFeO3 is mainly determined by the contributions from transition from valence band O 2p to conduction band Fe 3d levels or even higher conduction band Bi 6s states in the low-energy region. Compared with equilibrium state, state density peaks shift to left side and state density peaks become broader and lower, and band gap becomes smaller under strain states. Furthermore, strain increases optical absorption coefficient peaks, energy loss coefficient peaks and reflectivity coefficient peaks, and extinction coefficient peaks, exhibiting that optical properites of BiFeO3 is improved under strain states. Our research provides theoretical guidance for future optical applications of BiFeO3, especially photovoltaic application.

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