scholarly journals Recent progress on PEDOT:PSS based polymer blends and composites for flexible electronics and thermoelectric devices

2020 ◽  
Vol 4 (11) ◽  
pp. 3130-3152 ◽  
Author(s):  
Yan Yang ◽  
Hua Deng ◽  
Qiang Fu
Keyword(s):  
Electrical Conductivity ◽  
Polymer Blends ◽  
Thermoelectric Properties ◽  
Flexible Electronics ◽  
Recent Progress ◽  
Thermoelectric Devices

Recent progress on PEDOT:PSS composites by incorporating various polymers and fillers through blending and mixing methods and main focus is put onto the electrical conductivity, stretchability and thermoelectric properties.

Thermoelectric Properties of Semiconducting Polymers

2020 ◽  
Vol 50 (1) ◽  
pp. 551-574 ◽  
Author(s):  
Kelly A. Peterson ◽  
Elayne M. Thomas ◽  
Michael L. Chabinyc
Keyword(s):  
Power Generation ◽  
Electrical Conductivity ◽  
Thermoelectric Properties ◽  
Semiconducting Polymers ◽  
Solution Processing ◽  
Thermoelectric Devices ◽  
Materials Properties ◽  
Cooling Devices ◽  
Energetic Disorder ◽  
The Relationship

Semiconducting polymers have the potential to be used in thermoelectric devices that are lightweight, flexible, and fabricated using solution processing. Because of the structural and energetic disorder of these polymers, the relationship between their structure and thermoelectric properties is complex. We review how interrelated processing routes and doping methods affect the thermoelectric properties of polymers. The studies highlighted here have led to correlations between thermopower and electrical conductivity that can be described by theories under investigation. With greater understanding of the materials properties behind their performance, semiconducting polymers can be used in future power generation or cooling devices.

First principle investigation of stuctural, electronic, and thermoelectric properties of Ga1-xInxP (x = 0.0 to 1.0) alloys

2022 ◽  
Author(s):  
Abeer AlObaid
Keyword(s):  
Electrical Conductivity ◽  
Band Gap ◽  
Thermoelectric Properties ◽  
Power Factor ◽  
Figure Of Merit ◽  
First Principle ◽  
Group Iii V Semiconductors ◽  
Thermoelectric Devices ◽  
Group Iii ◽  
Maximum Value

Abstract Group III-V semiconductors are extensively studied for various technological applications. Different properties of Ga1-xInxP such as electronic, optical, elastic, thermal and mechanical, etc. were studied under different concentrations. However, there is no evident for thermoelectric performance of Ga1-xInxP (x = 0.0, 0.25, 0.50, 0.75 and 1.0). In the present study, we have calculated the structural, electronic and thermoelectric behavior of Ga1-xInxP by utilizing the WIEN2K package. The InP show indirect semiconductor nature of band gap of 2.1 eV. By adding the concentration of In, the band gap nature shifts from indirect to direct with a decrease in the band gap. For thermoelectric properties, Seebeck, thermal and electrical conductivity, power factor and figure of merit ZT are investigated through the BoltzTraP code. Our study reveals that Ga1-xInxP has a maximum value of ZT=0.79 at x=1, provide an opportunity for developing good thermoelectric devices.

scholarly journals Ag/VO2/Ag sandwich nylon film for smart thermal management and thermo-responsive electrical conductivity

2021 ◽  
pp. 152808372098654
Author(s):  
Linghui Peng ◽  
Lingling Shen ◽  
Weiren Fan ◽  
Zichuan Liu ◽  
Hongbo Qiu ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Thermal Comfort ◽  
Thermal Management ◽  
Flexible Electronics ◽  
Sandwich Structure ◽  
Outdoor Thermal Comfort ◽  
Ir Radiation ◽  
Indoor Space ◽  
Layer Structures ◽  
Radiation Management

Due to the effects of climate changing, the importance of outdoor thermal comfort has been recognized, and has gained more and more research attentions. Unlike indoor space where air conditioning can be easily implemented, outdoor thermal comfort can only be achieved by localized thermal management. Using textile is a simple but energy-saving way to realize outdoor thermal comfort. Herein, we report the design of a smart thermal management film with the silver/vanadium dioxide/silver (Ag/VO2/Ag) sandwich structure prepared by one-dimensional (1 D) nanowires. It was found that the Ag/VO2/Ag sandwich film was able to lower the temperature by around 10 °C under intense infrared (IR) radiation. In addition, the Ag/VO2/Ag sandwich structure film showed a thermo-responsive electrical conductivity and an outstanding bending stability, due to network structure formed by nanowires. It was experimentally proved that this sandwich structure was superior to other layer structures in IR shielding performance and thermo-responsive electrical conductivity. The as-prepared Ag/VO2/Ag sandwich structure film has great potential for various applications such as wearable devices, flexible electronics, medical monitors and smart IR radiation management.

scholarly journals Electrically Conductive Networks from Hybrids of Carbon Nanotubes and Graphene Created by Laser Radiation

Nanomaterials ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 1875
Author(s):  
Alexander Yu. Gerasimenko ◽  
Artem V. Kuksin ◽  
Yury P. Shaman ◽  
Evgeny P. Kitsyuk ◽  
Yulia O. Fedorova ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Electrical Conductivity ◽  
Laser Irradiation ◽  
Flexible Electronics ◽  
Threshold Energy ◽  
Wavelength Region ◽  
Hybrid Nanostructures ◽  
Graphene Sheets ◽  
Electrically Conductive ◽  
Walled Carbon Nanotubes

A technology for the formation of electrically conductive nanostructures from single-walled carbon nanotubes (SWCNT), multi-walled carbon nanotubes (MWCNT), and their hybrids with reduced graphene oxide (rGO) on Si substrate has been developed. Under the action of single pulses of laser irradiation, nanowelding of SWCNT and MWCNT nanotubes with graphene sheets was obtained. Dependences of electromagnetic wave absorption by films of short and long nanotubes with subnanometer and nanometer diameters on wavelength are calculated. It was determined from dependences that absorption maxima of various types of nanotubes are in the wavelength region of about 266 nm. It was found that contact between nanotube and graphene was formed in time up to 400 fs. Formation of networks of SWCNT/MWCNT and their hybrids with rGO at threshold energy densities of 0.3/0.5 J/cm2 is shown. With an increase in energy density above the threshold value, formation of amorphous carbon nanoinclusions on the surface of nanotubes was demonstrated. For all films, except the MWCNT film, an increase in defectiveness after laser irradiation was obtained, which is associated with appearance of C–C bonds with neighboring nanotubes or graphene sheets. CNTs played the role of bridges connecting graphene sheets. Laser-synthesized hybrid nanostructures demonstrated the highest hardness compared to pure nanotubes. Maximum hardness (52.7 GPa) was obtained for MWCNT/rGO topology. Regularity of an increase in electrical conductivity of nanostructures after laser irradiation has been established for films made of all nanomaterials. Hybrid structures of nanotubes and graphene sheets have the highest electrical conductivity compared to networks of pure nanotubes. Maximum electrical conductivity was obtained for MWCNT/rGO hybrid structure (~22.6 kS/m). Networks of nanotubes and CNT/rGO hybrids can be used to form strong electrically conductive interconnections in nanoelectronics, as well as to create components for flexible electronics and bioelectronics, including intelligent wearable devices (IWDs).

The Influence of Silicon Dopant and Processing on Thermoelectric Properties of B4C Ceramics

1998 ◽  
Vol 545 ◽  
Author(s):  
Ke-Feng Cai ◽  
Ce-Wen Nan ◽  
Xin-Min Min
Keyword(s):  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Hot Pressing ◽  
Figure Of Merit ◽  
Room Temperature ◽  
A Value ◽  
Si Doped

AbstractB4C ceramics doped with various content of Si (0 to 2.03 at%) are prepared via hot pressing. The composition and microstructure of the ceramics are characterized by means of XRD and EPMA. Their electrical conductivity and Seebeck coefficient of the samples are measured from room temperature up to 1500K. The electrical conductivity increases with temperature, and more rapidly after 1300K; the Seebeck coefficient of the ceramics also increases with temperature and rises to a value of about 320μVK−1. The value of the figure of merit of Si-doped B4C rises to about 4 × 10−4K−1 at 1500K.

Band Structure and Thermoelectric Properties of Ni(x)Zn(1-x)Fe2O4

2021 ◽  
Vol 317 ◽  
pp. 28-34
Author(s):  
Joon Hoong Lim
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Band Structure ◽  
Seebeck Coefficient ◽  
Band Gap ◽  
Thermoelectric Properties ◽  
Xrd Analysis ◽  
Valence Band Maximum ◽  
Solid State Method ◽  
Ni Content

Thermoelectric materials has made a great potential in sustainable energy industries, which enable the energy conversion from heat to electricity. The band structure and thermoelectric properties of Ni(x)Zn(1-x)Fe2O4 have been investigated. The bulk pellets were prepared from analytical grade ZnO, NiO and Fe2O3 powder using solid-state method. It was possible to obtain high thermoelectric properties of Ni(x)Zn(1-x)Fe2O4 by controlling the ratios of dopants and the sintering temperature. XRD analysis showed that the fabricated samples have a single phase formation of cubic spinel structure. The thermoelectric properties of Ni(x)Zn(1-x)Fe2O4 pellets improved with increasing Ni. The electrical conductivity of Ni(x)Zn(1-x)Fe2O4 pellets decreased with increasing Ni content. The electrical conductivity of Ni(x)Zn(1-x)Fe2O4 (x = 0.0) is (0.515 x10-3 Scm-1). The band structure shows that ZnxCu1-xFe2O4 is an indirect band gap material with the valence band maximum (VBM) at M and conduction band minimum (CBM) at A. The band gap of Ni(x)Zn(1-x)Fe2O4 increased with increasing Ni content. The increasing band gap correlated with the lower electrical conductivity. The thermal conductivity of Ni(x)Zn(1-x)Fe2O4 pellets decreased with increasing Ni content. The presence of Ni served to decrease thermal conductivity by 8 Wm-1K-1 over pure samples. The magnitude of the Seebeck coefficient for Ni(x)Zn(1-x)Fe2O4 pellets increased with increasing amounts of Ni. The figure of merit for Ni(x)Zn(1-x)Fe2O4 pellets and thin films was improved by increasing Ni due to its high Seebeck coefficient and low thermal conductivity.

scholarly journals Preparation and Thermoelectric Properties of Graphite/poly(3,4-ethyenedioxythiophene) Nanocomposites

Energies ◽  
2018 ◽  
Vol 11 (10) ◽  
pp. 2849 ◽  
Author(s):  
Yong Du ◽  
Haixia Li ◽  
Xuechen Jia ◽  
Yunchen Dou ◽  
Jiayue Xu ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Power Factor ◽  
Oxidative Polymerization ◽  
Polymerization Process ◽  
Measurement Temperature ◽  
Temperature Range ◽  
Different Content

Graphite/poly(3,4-ethyenedioxythiophene) (PEDOT) nanocomposites were prepared by an in-situ oxidative polymerization process. The electrical conductivity and Seebeck coefficient of the graphite/PEDOT nanocomposites with different content of graphite were measured in the temperature range from 300 K to 380 K. The results show that as the content of graphite increased from 0 to 37.2 wt %, the electrical conductivity of the nanocomposites increased sharply from 3.6 S/cm to 80.1 S/cm, while the Seebeck coefficient kept almost the same value (in the range between 12.0 μV/K to 15.1 μV/K) at 300 K, which lead to an increased power factor. The Seebeck coefficient of the nanocomposites increased from 300 K to 380 K, while the electrical conductivity did not substantially depend on the measurement temperature. As a result, a power factor of 3.2 μWm−1 K−2 at 380 K was obtained for the nanocomposites with 37.2 wt % graphite.

Substrate effects on the thermoelectric properties of Co-sputtered Bi-Te thin films for micro-thermoelectric devices

2012 ◽  
Vol 61 (9) ◽  
pp. 1435-1438 ◽  
Author(s):  
Hee-Jung Lee ◽  
Seungwoo Han ◽  
Kwang Eun Lee ◽  
Hyun Sung Park ◽  
Min-Su Kim
Keyword(s):  
Thin Films ◽  
Thermoelectric Properties ◽  
Thermoelectric Devices ◽  
Substrate Effects

LOW TEMPERATURE THERMOELECTRIC PROPERTIES AND AGING PHENOMENA OF NANOSTRUCTURED p-TYPE Bi2-XSbXTe3 (x = 1.46, 1.48, 1.52 AND 1.55)

2013 ◽  
Vol 06 (05) ◽  
pp. 1340008 ◽  
Author(s):  
DALE HITCHCOCK ◽  
YEN-LIANG LIU ◽  
YUFEI LIU ◽  
TERRY M. TRITT ◽  
JIAN HE ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Low Temperature ◽  
Thermoelectric Properties ◽  
Optimal Composition ◽  
Ambient Conditions ◽  
Bulk Materials ◽  
The Past ◽  
Aging Phenomena ◽  
P Type ◽  
Cold Pressed

Over the past decade the widely used p-type ( Bi 2-x Sb x) Te 3 bulk thermoelectric materials have been subject to various nanostructuring processes for higher thermoelectric performance. However, these nanostructuring processing were conducted on compositions optimized for bulk materials (x ~ 1.52–1.55). This leads to the question of whether the optimal composition for bulk materials is the same for their nanoscale counterparts. In this work we hydrothermally grew Bi 2-x Sb x Te 3 nanopowders (nominally, x = 1.46, 1.48, 1.52 and 1.55) and measured their thermoelectric properties on cold-pressed vacuum-sintered pellets (74–78% of the theoretical density) below 300 K. The measurements were conducted 18 months apart to probe the aging phenomena, with the samples stored in ambient conditions. We have found that (i) the peak of thermopower shifts to lower temperatures upon nanostructuring but it shifts back to higher temperatures upon aging; (ii) the electrical conductivity degrades by a factor of 1.5–2.3 upon aging while the temperature dependence is largely retained; and (iii) the ZT of freshly made samples is sensitive to the x value, a maximum ZT ~ 1.25(~ 0.62) at ~ 270 K (~ 255 K) was attained in the freshly made sample x = 1.55(x = 1.46), respectively; while the ZT of aged samples is significantly lowered by a factor of 2–4 but lesser x-dependent. These observations have been discussed in the context of charge buildup and compensation at grain boundaries.

Sign in / Sign up

Export Citation Format

Share Document