Bis-isatin based polymers with tunable energy levels for organic field-effect transistor applications

2021 ◽  
Vol 12 (15) ◽  
pp. 2317-2324
Author(s):  
Wei Yang ◽  
Mingxiang Sun ◽  
Yue Wang ◽  
Hui Yan ◽  
Guobing Zhang ◽  
...  
Keyword(s):  
Charge Transport ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Energy Levels ◽  
Building Blocks ◽  
Intramolecular Interactions ◽  
Organic Field Effect Transistor ◽  
Effect Transistor ◽  
P Type

Two bis-isatin based building blocks have been synthesized with the aid of non-covalent intramolecular interactions. Their polymers showed p-type or ambipolar charge transport in OFETs.

On Razors Edge: Influence of the Source Insulator Edge on the Charge Transport of Vertical Organic Field Effect Transistors

MRS Advances ◽  
2017 ◽  
Vol 2 (23) ◽  
pp. 1249-1257 ◽  
Author(s):  
F. Michael Sawatzki ◽  
Alrun A. Hauke ◽  
Duy Hai Doan ◽  
Peter Formanek ◽  
Daniel Kasemann ◽  
...  
Keyword(s):  
Charge Transport ◽  
Organic Semiconductors ◽  
Organic Solar Cells ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Electrical Power ◽  
Strong Impact ◽  
Organic Field Effect Transistor ◽  
Effect Transistor

ABSTRACTTo benefit from the many advantages of organic semiconductors like flexibility, transparency, and small thickness, electronic devices should be entirely made from organic materials. This means, additionally to organic LEDs, organic solar cells, and organic sensors, we need organic transistors to amplify, process, and control signals and electrical power. The standard lateral organic field effect transistor (OFET) does not offer the necessary performance for many of these applications. One promising candidate for solving this problem is the vertical organic field effect transistor (VOFET). In addition to the altered structure of the electrodes, the VOFET has one additional part compared to the OFET – the source-insulator. However, the influence of the used material, the size, and geometry of this insulator on the behavior of the transistor has not yet been examined. We investigate key-parameters of the VOFET with different source insulator materials and geometries. We also present transmission electron microscopy (TEM) images of the edge area. Additionally, we investigate the charge transport in such devices using drift-diffusion simulations and the concept of a vertical organic light emitting transistor (VOLET). The VOLET is a VOFET with an embedded OLED. It allows the tracking of the local current density by measuring the light intensity distribution.We show that the insulator material and thickness only have a small influence on the performance, while there is a strong impact by the insulator geometry – mainly the overlap of the insulator into the channel. By tuning this overlap, on/off-ratios of 9x105 without contact doping are possible.

Improving device performance of p-type organic field-effect transistor using butterfly like triarylamines

2020 ◽  
Vol 81 ◽  
pp. 105568 ◽  
Author(s):  
Ramachandran Dheepika ◽  
Anisha Shaji ◽  
Predhanekar Mohamed Imran ◽  
Samuthira Nagarajan
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Device Performance ◽  
Organic Field Effect Transistor ◽  
Effect Transistor ◽  
P Type

Effect of thiophene/furan substitution on organic field effect transistor properties of arylthiadiazole based organic semiconductors

2020 ◽  
Vol 8 (48) ◽  
pp. 17297-17306
Author(s):  
Anna Pachariyangkun ◽  
Masayuki Suda ◽  
Sarinya Hadsadee ◽  
Siriporn Jungsuttiwong ◽  
Phattananawee Nalaoh ◽  
...  
Keyword(s):  
Charge Transport ◽  
Transport Properties ◽  
Organic Semiconductors ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Organic Field Effect Transistor ◽  
Channel Layer ◽  
Effect Transistor

This study determines that furan could display comparable charge transport properties to its thiophene analogue. The OFET device employing furan-substituted benzothiadiazole as the channel layer showed a mobility (μmax) of 0.0122 cm2 V−1 s−1.

scholarly journals Comparison of Implant Isolation Species for GaN Field-effect Transistor Structures

2000 ◽  
Vol 5 (S1) ◽  
pp. 845-851
Author(s):  
G. Dang ◽  
X. A. Cao ◽  
F. Ren ◽  
S. J. Pearton ◽  
J. Han ◽  
...  
Keyword(s):  
Sheet Resistance ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Energy Levels ◽  
Trap Formation ◽  
Chemically Induced ◽  
Effect Transistor ◽  
P Type

Different ions (Ti+, O+, Fe+, Cr+) were implanted at multiple energies into GaN field effect transistor structures (n and p-type). The implantation was found to create deep states with energy levels in the range EC −0.20 to 0.49 eV in n-GaN and at EV +0.44 eV in p-GaN after annealing at 450-650 °C. The sheet resistance of the GaN was at a maximum after annealing at these temperatures, reaching values of ∼4×1012 Ω/□ in n-GaN and ∼1010 Ω/□ in p-GaN. The mechanism for the implant isolation was damage-related trap formation for all of the ions investigated, and there was no evidence of chemically induced isolation.

Nanoscale probing of charge transport in an organic field-effect transistor at cryogenic temperatures

2013 ◽  
Vol 15 (12) ◽  
pp. 4415 ◽  
Author(s):  
A. A. L. Nicolet ◽  
M. A. Kol'chenko ◽  
C. Hofmann ◽  
B. Kozankiewicz ◽  
M. Orrit
Keyword(s):  
Charge Transport ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Cryogenic Temperatures ◽  
Organic Field Effect Transistor ◽  
Effect Transistor

scholarly journals Top dielectric induced ambipolarity in an n-channel dual-gated organic field effect transistor

2019 ◽  
Vol 7 (33) ◽  
pp. 10389-10393 ◽  
Author(s):  
Kaushik Bairagi ◽  
Elisabetta Zuccatti ◽  
Francesco Calavalle ◽  
Sara Catalano ◽  
Subir Parui ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Electronic Circuits ◽  
Organic Field Effect Transistor ◽  
Organic Electronic ◽  
Effect Transistor ◽  
P Type ◽  
Complex Organic

The realization of both p-type and n-type operations in a single organic field effect transistor (OFET) is critical for simplifying the design of complex organic electronic circuits.

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