scholarly journals In situ total scattering experiments of nucleation and crystallisation of tantalum-based oxides: from highly dilute solutions via cluster formation to nanoparticles

Nanoscale ◽  
2021 ◽  
Vol 13 (1) ◽  
pp. 150-162
Author(s):  
Ezgi Onur Şahin ◽  
Harun Tüysüz ◽  
Candace K. Chan ◽  
Gun-hee Moon ◽  
Yitao Dai ◽  
...  
Keyword(s):  
Formation Mechanism ◽  
Cluster Formation ◽  
Dilute Solutions ◽  
Total Scattering ◽  
Alkoxide Precursors

The formation mechanism of amorphous tantalum oxides was studied by total scattering experiments starting from alkoxide precursors. Hydrolysed TaxOyHz clusters form in highly dilute solutions which were transformed into L-Ta2O5 by calcination.

scholarly journals Alkali-activation of CaO-FeOx-SiO2 slag: Formation mechanism from in-situ X-ray total scattering

2019 ◽  
Vol 122 ◽  
pp. 179-188 ◽  
Author(s):  
A. Peys ◽  
C.E. White ◽  
H. Rahier ◽  
B. Blanpain ◽  
Y. Pontikes
Keyword(s):  
Formation Mechanism ◽  
Alkali Activation ◽  
Slag Formation ◽  
Total Scattering ◽  
X Ray

In Situ Diagnostics of Vuv Laser Cvd of Semiconductor Interfaces by Ftir Spectroscopy and Spectroscopic Ellipsometry

1995 ◽  
Vol 397 ◽  
Author(s):  
M. Barth ◽  
J. Knobloch ◽  
P. Hess
Keyword(s):  
Film Thickness ◽  
Bulk Material ◽  
Substrate Surface ◽  
Cluster Formation ◽  
Interface Layer ◽  
Native Oxide ◽  
Initial Growth ◽  
Difference Spectra ◽  
Si Substrates

ABSTRACTThe growth of high quality amorphous hydrogenated semiconductor films was explored with different in situ spectroscopic methods. Nucleation of ArF laser-induced CVD of a-Ge:H on different substrates was investigated by real time ellipsometry, whereas the F2 laser (157nm) deposition of a-Si:H was monitored by FTIR transmission spectroscopy. The ellipsometric studies reveal a significant influence of the substrate surface on the nucleation stage, which in fact determines the electronic and mechanical properties of the bulk material. Coalescence of initial clusters occurs at a thickness of 16 Å for atomically smooth hydrogen-terminated c-Si substrates, whereas on native oxide covered c-Si substrates the bulk volume void fractions are not reached until 35 Å film thickness. For the first time we present a series of IR transmission spectra with monolayer resolution of the initial growth of a-Si:H. Hereby the film thickness was measured simultaneously using a quartz crystal microbalance with corresponding sensitivity. The results give evidence for cluster formation with a coalescence radius of about 20 Å. Difference spectra calculated for layers at different depths with definite thickness reveal that the hydrogen-rich interface layer stays at the substrate surface and does not move with the surface of the growing film. The decrease of the Urbach energy switching from native oxide to H-terminated substrates suggests a strong influence of the interface morphology on the bulk material quality.

In situ time-resolved DXAFS study of Rh nanoparticle formation mechanism in ethylene glycol at elevated temperature

2012 ◽  
Vol 14 (9) ◽  
pp. 2983 ◽  
Author(s):  
Hiroyuki Asakura ◽  
Kentaro Teramura ◽  
Tetsuya Shishido ◽  
Tsunehiro Tanaka ◽  
Ning Yan ◽  
...  
Keyword(s):  
Elevated Temperature ◽  
Ethylene Glycol ◽  
Formation Mechanism ◽  
Time Resolved ◽  
Nanoparticle Formation

Nanostructure formation mechanism during in-situ consolidation of copper by room-temperature ball milling

2015 ◽  
Vol 65 ◽  
pp. 1083-1090 ◽  
Author(s):  
M. Samadi Khoshkhoo ◽  
S. Scudino ◽  
T. Gemming ◽  
J. Thomas ◽  
J. Freudenberger ◽  
...  
Keyword(s):  
Ball Milling ◽  
Formation Mechanism ◽  
Room Temperature ◽  
Nanostructure Formation

Elucidation of the Formation Mechanism of Metal–Organic Frameworks via in-Situ Raman and FTIR Spectroscopy under Solvothermal Conditions

2018 ◽  
Vol 122 (23) ◽  
pp. 12267-12278 ◽  
Author(s):  
Heidemarie Embrechts ◽  
Martin Kriesten ◽  
Kilian Hoffmann ◽  
Wolfgang Peukert ◽  
Martin Hartmann ◽  
...  
Keyword(s):  
Ftir Spectroscopy ◽  
Formation Mechanism ◽  
Metal Organic Frameworks ◽  
In Situ Raman ◽  
Metal Organic ◽  
Solvothermal Conditions

Carbon-nanotube formation mechanism reduced from the in situ observations: selective growth of nanotubes and nanoparticles

2002 ◽  
Vol 323 (1-4) ◽  
pp. 269-271
Author(s):  
Ayumu Yasuda ◽  
Wataru Mizutani ◽  
Tetsuo Shimizu ◽  
Hiroshi Tokumoto
Keyword(s):  
Carbon Nanotube ◽  
Formation Mechanism ◽  
Selective Growth ◽  
In Situ Observations
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