Nanoscale light- and voltage-induced lattice strain in perovskite thin films

Nanoscale ◽  
2021 ◽  
Author(s):  
Haian Qiu ◽  
Jeffrey M. Mativetsky
Keyword(s):  
Thin Films ◽  
Lattice Strain ◽  
Optoelectronic Device ◽  
Structural Rearrangement ◽  
Lattice Deformation ◽  
Cation Migration ◽  
Nonlinear Lattice ◽  
Insight Into

Combined light and voltage stimulus triggers localized cation migration, nonlinear lattice deformation, and nanoscale structural rearrangement in perovskite films providing insight into perovskite optoelectronic device instability.

Optical Properties of Zinc Sulphide Thin Films Coated with Aqueous Organic Dye Extract for Solar and Optoelectronic Device Applications

2021 ◽  
Vol 50 (5) ◽  
pp. 2576-2583
Author(s):  
Uche Paul Onochie ◽  
Sunday Chukwuyem Ikpeseni ◽  
Anthony Egwu Igweoko ◽  
Hilary Ijeoma Owamah ◽  
Chinecherem Collins Aluma ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Optoelectronic Device ◽  
Zinc Sulphide ◽  
Organic Dye ◽  
Device Applications

CONDUCTIVE COPPER SULFIDE THIN FILMS ON POLYIMIDE FOILS FOR OPTICAL AND OPTOELECTRONIC APPLICATIONS

2001 ◽  
Vol 15 (17n19) ◽  
pp. 774-777 ◽  
Author(s):  
J. CARDOSO ◽  
O. GOMEZ-DAZA ◽  
L. IXTLILCO ◽  
M. T. S. NAIR ◽  
P. K. NAIR
Keyword(s):  
Thin Films ◽  
Sheet Resistance ◽  
Copper Sulfide ◽  
Optoelectronic Device ◽  
Infrared Reflectance ◽  
Thermally Stable ◽  
Conductive Coatings ◽  
Device Structures ◽  
Conductive Substrates ◽  
Optoelectronic Applications

Copper sulfide thin films of 75 nm and 100 nm thickness were coated on Kapton foils (PI) of 25 nm thickness by floating them on a chemical bath. The foils were annealed at 150°C-400°C in N 2 converting the coating from CuS to Cu 1.8 S . The sheet resistance of the annealed coatings (100 nm) is 10-50 ohms/square which is almost unaltered after immersion in dilute HCl for 30-120 min. The infrared reflectance predicted for the coatings is 67%-77% at a wavelength 2.5 μm, which is nearly what is experimentally observed. The coated PI has a transmittance (25-35%) peak located around 550-600 nm. These thermally stable conductive coatings on PI foils might be used as conductive substrates for optoelectronic device structures.

Lattice-strain-driven ferromagnetic ordering in La0.8Sr0.2MnO3 thin films

2004 ◽  
Vol 84 (5) ◽  
pp. 777-779 ◽  
Author(s):  
Y. P. Lee ◽  
S. Y. Park ◽  
V. G. Prokhorov ◽  
V. A. Komashko ◽  
V. L. Svetchnikov
Keyword(s):  
Thin Films ◽  
Lattice Strain ◽  
Ferromagnetic Ordering

scholarly journals Crystal Structure, Lattice Strain, Morphology, and Electrical Properties of SnO2 Nanoparticles Induced by Low Calcination Temperature

2020 ◽  
Vol 2020 ◽  
pp. 1-10
Author(s):  
Panya Khaenamkaew ◽  
Dhonluck Manop ◽  
Chaileok Tanghengjaroen ◽  
Worasit Palakawong Na Ayuthaya
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Calcination Temperature ◽  
Tin Dioxide ◽  
Lattice Strain ◽  
Dielectric Constants ◽  
Precipitation Method ◽  
Calcination Temperatures ◽  
Sensing Applications ◽  
Crystallite Sizes

The electrical properties of tin dioxide (SnO2) nanoparticles induced by low calcination temperature were systematically investigated for gas sensing applications. The precipitation method was used to prepare SnO2 powders, while the sol-gel method was adopted to prepare SnO2 thin films at different calcination temperatures. The characterization was done by X-ray diffraction, scanning electron microscopy (SEM), and atomic force microscopy (AFM). The samples were perfectly matched with the rutile tetragonal structure. The average crystallite sizes of SnO2 powders were 45 ± 2, 50 ± 2, 62 ± 2, and 65 ± 2 nm at calcination temperatures of 300, 350, 400, and 450°C, respectively. SEM images and AFM topographies showed an increase in particle size and roughness with the rise in calcination temperature. The dielectric constant decreased with the increase in the frequency of the applied signals but increased on increasing calcination temperature. By using the UV-Vis spectrum, the direct energy bandgaps of SnO2 thin films were found as 4.85, 4.80, 4.75, and 4.10 eV for 300, 350, 400, and 450°C, respectively. Low calcination temperature as 300°C allows smaller crystallite sizes and lower dielectric constants but increases the surface roughness of SnO2, while lattice strain remains independent. Thus, low calcination temperatures of SnO2 are promising for electronic devices like gas sensors.

New Insight into the Effect of Nozzle Diameter on the Properties of Sprayed ZnO Thin Films

2021 ◽  
Author(s):  
Abdellah Rahmani ◽  
Louardi Remache ◽  
Mohammed Guendouz ◽  
Nathalie Lorrain ◽  
Ali Djermane ◽  
...  
Keyword(s):  
Thin Films ◽  
Nozzle Diameter ◽  
Zno Thin Films ◽  
Insight Into
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