An integrated and multi-technique approach to characterize airborne graphene flakes in the workplace during production phases

Nanoscale ◽  
2021 ◽  
Vol 13 (6) ◽  
pp. 3841-3852 ◽  
Author(s):  
Francesca Tombolini ◽  
Fabio Boccuni ◽  
Riccardo Ferrante ◽  
Claudio Natale ◽  
Luigi Marasco ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Real Time ◽  
Average Diameter ◽  
Workplace Exposure ◽  
Layer Graphene ◽  
Characterization Technique ◽  
Graphene Flakes ◽  
Electron Microscopes ◽  
Few Layer Graphene

Workplace exposure to airborne few layer graphene: real time measurements (PNC, average diameter and LDSA) and characterization technique using electron microscopes (SEM, EDS, TEM, SAED) and Raman spectroscopy.

Tunable Phase Shifter Based on Few-Layer Graphene Flakes

2019 ◽  
Vol 29 (1) ◽  
pp. 47-49 ◽  
Author(s):  
Muhammad Yasir ◽  
Silvia Bistarelli ◽  
Antonino Cataldo ◽  
Maurizio Bozzi ◽  
Luca Perregrini ◽  
...  
Keyword(s):  
Phase Shifter ◽  
Layer Graphene ◽  
Graphene Flakes ◽  
Few Layer Graphene

scholarly journals Long Spin Diffusion Length in Few-Layer Graphene Flakes

2016 ◽  
Vol 117 (14) ◽  
Author(s):  
W. Yan ◽  
L. C. Phillips ◽  
M. Barbone ◽  
S. J. Hämäläinen ◽  
A. Lombardo ◽  
...  
Keyword(s):  
Spin Diffusion ◽  
Diffusion Length ◽  
Layer Graphene ◽  
Graphene Flakes ◽  
Spin Diffusion Length ◽  
Few Layer Graphene

Direct imaging of construction of carbon onions by curling few-layer graphene flakes

2018 ◽  
Vol 20 (3) ◽  
pp. 2022-2027 ◽  
Author(s):  
Meifen Li ◽  
Weiwei Liu ◽  
Haixia Zhang ◽  
Zhilu Liang ◽  
Pei Duan ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Atomic Scale ◽  
Growth Stages ◽  
Direct Imaging ◽  
Layer Graphene ◽  
Graphene Flakes ◽  
Carbon Onions ◽  
Few Layer Graphene

Atomic-scale electron microscopy of carbon onions at intermediary growth stages suggests that carbon onions are constructed by few-layer graphene flakes.

Graphene Layers on Silicon Carbide Studied by Raman Spectroscopy

2008 ◽  
Vol 600-603 ◽  
pp. 567-570 ◽  
Author(s):  
Jonas Röhrl ◽  
Martin Hundhausen ◽  
Konstantin V. Emtsev ◽  
Thomas Seyller ◽  
Lothar Ley
Keyword(s):  
Silicon Carbide ◽  
Raman Spectroscopy ◽  
Light Scattering ◽  
Graphene Layer ◽  
Monolayer Graphene ◽  
Spectroscopy Study ◽  
Graphene Layers ◽  
Layer Graphene ◽  
Micro Raman Spectroscopy ◽  
Few Layer Graphene

We present a micro-Raman spectroscopy study on single- and few layer graphene (FLG) grown on the silicon terminated surface of 6H-silicon carbide (SiC). On the basis of the 2D-line (light scattering from two phonons close to the K-point in the Brillouin zone) we distinguish graphene mono- from bilayers or few layer graphene. Monolayers have a 2D-line consisting of only one component, whereas more than one component is observed for thicker graphene layers. Compared to the graphite the monolayer graphene lines are shifted to higher frequencies. We tentatively ascribe the corresponding phonon hardening to strain in the first graphene layer.

Raman Spectroscopy as a Tool to Address Individual Graphene Layers in Few-Layer Graphene

2012 ◽  
Vol 116 (35) ◽  
pp. 19046-19050 ◽  
Author(s):  
Martin Kalbac ◽  
Jing Kong ◽  
Mildred S. Dresselhaus
Keyword(s):  
Raman Spectroscopy ◽  
Graphene Layers ◽  
Layer Graphene ◽  
Few Layer Graphene

Real-Time Observation of Interlayer Vibrations in Bilayer and Few-Layer Graphene

Nano Letters ◽  
2013 ◽  
Vol 13 (10) ◽  
pp. 4620-4623 ◽  
Author(s):  
Davide Boschetto ◽  
Leandro Malard ◽  
Chun Hung Lui ◽  
Kin Fai Mak ◽  
Zhiqiang Li ◽  
...  
Keyword(s):  
Real Time ◽  
Layer Graphene ◽  
Time Observation ◽  
Few Layer Graphene ◽  
Real Time Observation

Solid Phase Growth of Graphene on Silicon Carbide by Nickel Silicidation: Graphene Formation Mechanisms

2014 ◽  
Vol 778-780 ◽  
pp. 1162-1165
Author(s):  
Enrique Escobedo-Cousin ◽  
Konstantin Vassilevski ◽  
Toby Hopf ◽  
Nicholas Wright ◽  
Anthony G. O'Neill ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Solid Phase ◽  
Formation Mechanisms ◽  
Layer By Layer ◽  
Phase Growth ◽  
Force Microscopy ◽  
Layer Graphene ◽  
Atomic Force ◽  
High Temperature Stage ◽  
Few Layer Graphene

This work presents experimental evidence of the formation mechanisms of few-layer graphene (FLG) films on SiC by nickel silicidation. FLG is formed by annealing of a 40 nm thick Ni layer on 6H-SiC at 1035ºC for 60 s, resulting in a Ni2Si layer which may be capped by any Ni that did not react during annealing. It has been proposed that FLG forms on top of the Ni during the high temperature stage. In contrast, during cooling, carbon atoms which were released during the silicidation reaction may diffuse back towards the Ni2Si/SiC interface to form a second FLG film. After annealing, layer-by-layer de-processing was carried out in order to unequivocally identify the FLG at each location using Atomic force microscopy (AFM) and Raman spectroscopy.

Gamma ray-assisted irradiation of few-layer graphene films: a Raman spectroscopy study

2014 ◽  
Vol T162 ◽  
pp. 014025 ◽  
Author(s):  
D N Kleut ◽  
Z M Marković ◽  
I D Holclajtner Antunović ◽  
M D Dramićanin ◽  
D P Kepić ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Gamma Ray ◽  
Spectroscopy Study ◽  
Layer Graphene ◽  
Graphene Films ◽  
Few Layer Graphene
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