Photoresponse improvement of mixed-dimensional 1D–2D GaAs photodetectors by incorporating constructive interface states

Nanoscale ◽  
2021 ◽  
Author(s):  
Dengkui Wang ◽  
Xue Chen ◽  
Xuan Fang ◽  
Jilong Tang ◽  
Fengyuan Lin ◽  
...  

A mixed-dimensional photodetector was constructed to convert the harmful surface states of low-dimensional materials into their constructive interface states.

Crystals ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 1160
Author(s):  
Shuai Guo ◽  
Xue Chen ◽  
Dengkui Wang ◽  
Xuan Fang ◽  
Dan Fang ◽  
...  

Low-dimensional GaAs photodetectors have drawn a great deal of attention because of their unique absorption properties and superior responsivity. However, their slow response speed caused by surface states presents challenges. In this paper, a mixed-dimensional GaAs photodetector is fabricated utilizing a single GaAs nanowire (NW) and a GaAs 2D non-layer sheet (2DNLS). The photodetector exhibits a fast response with a rise time of ~4.7 ms and decay time of ~6.1 ms. The high-speed performance is attributed to an electron transmission channel at the interface between the GaAs NW and GaAs 2DNLS. Furthermore, the fast electron channel is confirmed by eliminating interface states via wet passivation. This work puts forward an effective way to realize a high-speed photodetector by utilizing the surface states of low-dimensional materials.


Sensors ◽  
2021 ◽  
Vol 21 (4) ◽  
pp. 1535
Author(s):  
Shiu-Ming Huang ◽  
Jai-Lung Hung ◽  
Mitch Chou ◽  
Chi-Yang Chen ◽  
Fang-Chen Liu ◽  
...  

Broadband photosensors have been widely studied in various kinds of materials. Experimental results have revealed strong wavelength-dependent photoresponses in all previous reports. This limits the potential application of broadband photosensors. Therefore, finding a wavelength-insensitive photosensor is imperative in this application. Photocurrent measurements were performed in Sb2Te3 flakes at various wavelengths ranging from visible to near IR light. The measured photocurrent change was insensitive to wavelengths from 300 to 1000 nm. The observed wavelength response deviation was lower than that in all previous reports. Our results show that the corresponding energies of these photocurrent peaks are consistent with the energy difference of the density of state peaks between conduction and valence bands. This suggests that the observed photocurrent originates from these band structure peak transitions under light illumination. Contrary to the most common explanation that observed broadband photocurrent carrier is mainly from the surface state in low-dimensional materials, our experimental result suggests that bulk state band structure is the main source of the observed photocurrent and dominates the broadband photocurrent.


2019 ◽  
Vol 3 (3) ◽  
Author(s):  
Peter Mahler Larsen ◽  
Mohnish Pandey ◽  
Mikkel Strange ◽  
Karsten Wedel Jacobsen

Nanoscale ◽  
2021 ◽  
Author(s):  
Ivan Marri ◽  
Stefano Ossicini

An important challenge in the field of renewable energy is the development of novel nanostructured solar cell devices which implement low-dimensional materials to overcome the limits of traditional photovoltaic systems....


Nanoscale ◽  
2021 ◽  
Author(s):  
Z.Q. Zheng ◽  
Yuchen Zhou ◽  
Wei Gao ◽  
Li Zhang ◽  
Mengmeng Yang ◽  
...  

Heterojunctions based on low-dimensional materials can combine the superiorities of each composition and realize novel properties. Herein, a mixed-dimensional heterojunction comprising multilayer WS2, CdS microwire and few-layer WS2 has been...


Author(s):  
Radha Somaiya ◽  
Deobrat Singh ◽  
Yogesh Kumar Sonvane ◽  
Sanjeev Kumar Gupta ◽  
Rajeev Ahuja

Low dimensional materials possess a challenge to identify a photocatalyst suitable for photocatalytic water splitting application. We have systematically investigated that SiN, SiP, and SiAs homo-bilayers are efficient for water...


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