Monolithic integration of InP on Si by molten alloy driven selective area epitaxial growth
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We report a new approach for monolithic integration of III–V materials into silicon, based on selective area growth and driven by a molten alloy in metal–organic vapor phase epitaxy.
1999 ◽
Vol 38
(Part 1, No. 3A)
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pp. 1516-1520
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2008 ◽
Vol 47
(11)
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pp. 8269-8274
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2003 ◽
Vol 248
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pp. 384-389
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2010 ◽
Vol 7
(7-8)
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pp. 2085-2087
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2013 ◽
Vol 52
(8S)
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pp. 08JB26
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2007 ◽
Vol 298
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pp. 28-31
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