Oxygen vacancy injection-induced resistive switching in combined mobile and static gradient doped tin oxide nanorods

Nanoscale ◽  
2020 ◽  
Vol 12 (35) ◽  
pp. 18322-18332
Author(s):  
Thomas Herzog ◽  
Naomi Weitzel ◽  
Sebastian Polarz
Keyword(s):  
Oxygen Vacancy ◽  
Resistive Switching ◽  
Tin Oxide ◽  
Oxygen Vacancies ◽  
Antimony Doping ◽  
Oxide Nanorods

In arrays of multi-domain nanowires static antimony doping in combination with mobile doping stemming from oxygen vacancies is utilized to achieve bipolar memristive properties resulting from oxygen vacancy injection in an undoped tin oxide domain.

Characterization and Modeling of the Conduction and Switching Mechanisms of HfOx Based RRAM

2014 ◽  
Vol 1631 ◽  
Author(s):  
Shimeng Yu ◽  
H.-S. Philip Wong
Keyword(s):  
Oxygen Vacancy ◽  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Conduction Mechanism ◽  
Frequency Noise ◽  
Conductive Filament ◽  
Ion Migration ◽  
Pulse Switching ◽  
Oxygen Ion ◽  
Oxygen Ion Migration

ABSTRACTThe conduction and switching mechanism of resistive random access memory (RRAM) is reviewed in this paper. The resistive switching in oxides is generally attributed to the conductive filament (made up of oxygen vacancies) formation and rupture in the oxide due to field assisted oxygen ion migration. As a model system for device physics study, HfOx based RRAM devices were fabricated and characterized. To identify the electron conduction mechanism, various electrical characterization techniques such as I-V measurements at various temperatures, low-frequency noise measurements, and AC conductance measurements were employed. It was suggested that the trap-assisted-tunneling is the dominant conduction mechanism. In order to explore the oxygen ion migration dynamics, pulse switching measurements were performed. An exponential voltage-time relationship was found between the switching time and the applied voltage. To obtain a first-order understanding of the variability of resistive switching, a Kinetic Monte Carlo (KMC) numerical simulator was developed. The generation/recombination/migration probabilities of oxygen vacancies and oxygen ions were calculated, and the conductive filament configuration was updated stochastically according to those probabilities. The KMC simulation can reproduce many experimental observations in the DC I-V sweep, pulse switching, endurance cycling, and retention baking, etc. The tail bits in the resistance distribution are attributed to the oxygen vacancy left over in the gap region due to a competition between the oxygen vacancy generation and recombination. To enable circuit and system development using RRAM, a compact device model was developed. The compact model, implemented in MATLAB, HSPICE, and Verilog-A, which can be employed in many commonly available circuit simulators using the SPICE engine.

scholarly journals Reliable resistive switching memory based on oxygen-vacancy-controlled bilayer structures

RSC Advances ◽  
2016 ◽  
Vol 6 (26) ◽  
pp. 21736-21741 ◽  
Author(s):  
Kyuhyun Park ◽  
Jang-Sik Lee
Keyword(s):  
Oxygen Vacancy ◽  
Atomic Layer Deposition ◽  
Aluminum Oxide ◽  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Atomic Layer ◽  
Resistive Switching Memory ◽  
Layer Deposition ◽  
Aluminum Oxide Layer ◽  
Switching Memory

Reliable resistive switching memory devices were developed by controlling the oxygen vacancies in aluminum oxide layer during atomic layer deposition and by adopting bilayer structures.

Chemoselective Hydrogenation of Cinnamaldehyde over Tailored Oxygen Vacancy Rich Pd@ZrO2 Catalyst

2021 ◽  
Author(s):  
Komal N. Patil ◽  
Divya Prasad ◽  
Jayesh T. Bhanushali ◽  
Bhalchandra Kakade ◽  
Arvind H. Jadhav ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Selective Hydrogenation ◽  
Oxygen Vacancies ◽  
Synthesis Method ◽  
Chemoselective Hydrogenation ◽  
Zro2 Catalyst ◽  
Industrial Relevance

Selective hydrogenation of cinnamaldehyde to hydrocinnamaldehyde is captivating due to its industrial relevance. Herein, two-step synthesis method was adopted to develop oxygen vacancies in Pd@ZrO2 catalysts. The oxygen vacancies were...

In situ synthesis of Cl-doped Bi2O2CO3 and its enhancement of photocatalytic activity by inducing generation of oxygen vacancies

2020 ◽  
Vol 7 (16) ◽  
pp. 2969-2978
Author(s):  
Jie-hao Li ◽  
Jie Ren ◽  
Ying Liu ◽  
Hui-ying Mu ◽  
Rui-hong Liu ◽  
...  
Keyword(s):  
Photocatalytic Activity ◽  
Ionic Liquids ◽  
Oxygen Vacancy ◽  
Oxygen Vacancies ◽  
In Situ Synthesis ◽  
Photocatalytic Mechanism

Cl-Doped Bi2O2CO3 is prepared using ionic liquids as dopants and the oxygen-vacancy-induced photocatalytic mechanism is revealed.

A hierarchical oxygen vacancy-rich WO3 with “nanowire-array-on-nanosheet-array” structure for highly efficient oxygen evolution reaction

2019 ◽  
Vol 7 (12) ◽  
pp. 6730-6739 ◽  
Author(s):  
Jinxiang Diao ◽  
Wenyu Yuan ◽  
Yu Qiu ◽  
Laifei Cheng ◽  
Xiaohui Guo
Keyword(s):  
Oxygen Vacancy ◽  
Oxygen Evolution Reaction ◽  
Oxygen Vacancies ◽  
State Of The Art ◽  
Nanowire Array ◽  
Nanowire Arrays ◽  
Nanosheet Array ◽  
Nanosheet Arrays ◽  
Array Structure ◽  
First Time

Hierarchical vertical WO3 nanowire arrays on vertical WO3 nanosheet arrays with rich oxygen vacancies were synthesized via a simple and facile method, and the outstanding OER performance which is superior to that of most reported state-of-the-art catalysts was reported for the first time.

Facile Synthesis and Optical Property of Porous Tin Oxide and Europium-Doped Tin Oxide Nanorods through Thermal Decomposition of the Organotin

2008 ◽  
Vol 112 (50) ◽  
pp. 19939-19944 ◽  
Author(s):  
Weiqiang Fan ◽  
Shuyan Song ◽  
Jing Feng ◽  
Yongqian Lei ◽  
Guoli Zheng ◽  
...  
Keyword(s):  
Thermal Decomposition ◽  
Optical Property ◽  
Tin Oxide ◽  
Facile Synthesis ◽  
Oxide Nanorods

Oxygen vacancy induced electron traps in tungsten doped Bi2MoO6 for enhanced photocatalytic performance

CrystEngComm ◽  
2021 ◽  
Author(s):  
Chang Sun ◽  
Zitong Zhao ◽  
Hougang Fan ◽  
Yanli Chen ◽  
Xiaoyan Liu ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Recombination Rate ◽  
Oxygen Vacancies ◽  
Photocatalytic Performance ◽  
Electron Trap ◽  
Electron Traps

As the concentration of the W dopant increased in the Bi2Mo1−xWxO6 nanosheets, the density of the oxygen vacancies became higher, which served as electron trap centers to lower the recombination rate and enhance the photocatalytic performance.

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