Linear dicarboxylate-based pyridyl-appended cobalt(ii) coordination polymers in search of opto-electronic properties

2020 ◽  
Vol 44 (21) ◽  
pp. 9004-9009 ◽  
Author(s):  
Faruk Ahmed ◽  
Joydeep Datta ◽  
Samim Khan ◽  
Basudeb Dutta ◽  
Sakhiul Islam ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Coordination Polymers ◽  
Optoelectronic Property

Two isotypical Co(ii)-based 1D coordination polymers with a linear ditopic linker along with pyridyl based ligands exhibit optoelectronic property.

Impact of Metal-Ion Dependence on the Porous and Electronic Properties of TCNQ-Dianion-Based Porous Coordination Polymers

2011 ◽  
Vol 50 (1) ◽  
pp. 172-177 ◽  
Author(s):  
Satoru Shimomura ◽  
Nobuhiro Yanai ◽  
Ryotaro Matsuda ◽  
Susumu Kitagawa
Keyword(s):  
Electronic Properties ◽  
Coordination Polymers ◽  
Metal Ion ◽  
Porous Coordination Polymers

Mixed-Metal Cu–Zn Thiocyanate Coordination Polymers with Melting Behavior, Glass Transition, and Tunable Electronic Properties

2021 ◽  
Author(s):  
Chayanit Wechwithayakhlung ◽  
Suttipong Wannapaiboon ◽  
Sutassana Na-Phattalung ◽  
Phisut Narabadeesuphakorn ◽  
Similan Tanjindaprateep ◽  
...  
Keyword(s):  
Glass Transition ◽  
Electronic Properties ◽  
Coordination Polymers ◽  
Melting Behavior ◽  
Mixed Metal

Structural properties of GaAs/InGaAs/GaAs (001) and InGaAs/GaAs (001) heterostructures and correlation with electronic properties

1990 ◽  
Vol 48 (4) ◽  
pp. 602-603
Author(s):  
J.M. Bonar ◽  
R. Hull ◽  
R. Malik ◽  
R. Ryan ◽  
J.F. Walker
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Gaas Substrate ◽  
Critical Thickness ◽  
Lattice Mismatch ◽  
Band Offset ◽  
Misfit Dislocations ◽  
Gaas Substrates ◽  
Gaas Structure ◽  
Low X

In this study we have examined a series of strained heteropeitaxial GaAs/InGaAs/GaAs and InGaAs/GaAs structures, both on (001) GaAs substrates. These heterostructures are potentially very interesting from a device standpoint because of improved band gap properties (InAs has a much smaller band gap than GaAs so there is a large band offset at the InGaAs/GaAs interface), and because of the much higher mobility of InAs. However, there is a 7.2% lattice mismatch between InAs and GaAs, so an InxGa1-xAs layer in a GaAs structure with even relatively low x will have a large amount of strain, and misfit dislocations are expected to form above some critical thickness. We attempt here to correlate the effect of misfit dislocations on the electronic properties of this material.The samples we examined consisted of 200Å InxGa1-xAs layered in a hetero-junction bipolar transistor (HBT) structure (InxGa1-xAs on top of a (001) GaAs buffer, followed by more GaAs, then a layer of AlGaAs and a GaAs cap), and a series consisting of a 200Å layer of InxGa1-xAs on a (001) GaAs substrate.

Electronic properties of two coupled Siδ-doped GaAs structures

2002 ◽  
Vol 21 (2) ◽  
pp. 91-95 ◽  
Author(s):  
E. Ozturk ◽  
H. Sari ◽  
Y. Ergun ◽  
I. Sokmen
Keyword(s):  
Electronic Properties

The electronic properties of a radical cation salt of bis-ethylenedioxodibenzofuran, [(bEDODBF)5 (AsF6)2(CH2Cl 2)0.2]

1988 ◽  
Vol 49 (4) ◽  
pp. 667-673 ◽  
Author(s):  
S. Söderholm ◽  
J. Hellberg ◽  
G. Ahlgren ◽  
M. Krebs ◽  
J.U. von Schütz ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Radical Cation ◽  
Radical Cation Salt
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