Origin of layer-dependent SERS tunability in 2D transition metal dichalcogenides

2021 ◽  
Author(s):  
Mingze Li ◽  
Yimeng Gao ◽  
Xingce Fan ◽  
Yunjia Wei ◽  
Qi Hao ◽  
...  

Two-dimensional (2D) semiconductors are expected to replace noble metals to become the matrix materials of next generation of commercial surface-enhanced Raman scattering (SERS) chips. Herein, we systematically studied the influence...

NANO ◽  
2021 ◽  
pp. 2150076
Author(s):  
Kongjia Zheng ◽  
Jianjun Deng ◽  
Zhonghao Zhou ◽  
Jinglong Chen ◽  
Zhiyong Wang ◽  
...  

Ultrathin two-dimensional transition metal dichalcogenides represent a promising new class of materials with surface-enhanced Raman scattering (SERS) activities. Previous work mainly focused on the SERS effects of transition metal dichalcogenide crystals with sizes of micrometer scale. The enhancement effect is usually nonuniform on the SERS substrates. In this paper, we report a chemical vapor deposition method for the preparation of centimeter-scale MoSe2 films with uniform and high SERS activity. The molybdenum precursors are supplied in a “face-to-face” manner from a silica gel plate to the growth substrate, which guarantees uniform nucleation and growth of the monolayer MoSe2. We demonstrate that the monolayer MoSe2 film has strong SERS effect, which can be attributed to charge transfer between MoSe2 and the probe molecules. The detection limit of Rhodamine B on monolayer MoSe2 is determined to be 10[Formula: see text][Formula: see text]mol/L, and the Raman enhancement factor is estimated to be [Formula: see text]. Due to its atomic uniformity and chemical stability, the MoSe2 film can serve as an ideal two-dimensional SERS material for detection of various molecules.


2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Fábio Ferreira ◽  
Vladimir V. Enaldiev ◽  
Vladimir I. Fal’ko ◽  
Samuel J. Magorrian

AbstractIn bilayers of two-dimensional semiconductors with stacking arrangements which lack inversion symmetry charge transfer between the layers due to layer-asymmetric interband hybridisation can generate a potential difference between the layers. We analyse bilayers of transition metal dichalcogenides (TMDs)—in particular, $$\hbox {WSe}_2$$ WSe 2 —for which we find a substantial stacking-dependent charge transfer, and InSe, for which the charge transfer is found to be negligibly small. The information obtained about TMDs is then used to map potentials generated by the interlayer charge transfer across the moiré superlattice in twistronic bilayers.


ACS Nano ◽  
2021 ◽  
Author(s):  
Miao Zhang ◽  
Martina Lihter ◽  
Tzu-Heng Chen ◽  
Michal Macha ◽  
Archith Rayabharam ◽  
...  

Author(s):  
Sai Manoj Gali ◽  
David Beljonne

Transition Metal Dichalcogenides (TMDCs) are emerging as promising two-dimensional (2D) materials. Yet, TMDCs are prone to inherent defects such as chalcogen vacancies, which are detrimental to charge transport. Passivation of...


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