scholarly journals Low-temperature electronic transport of manganese silicide shell-protected single crystal nanowires for nanoelectronics applications

2021 ◽  
Author(s):  
Alexsandro dos Santos Evangelista da Cruz ◽  
Marcos Vinicius Puydinger Santos ◽  
Raul Back Campanelli ◽  
Pascoal Giglio Pagliuso ◽  
Jefferson Bettini ◽  
...  
Keyword(s):  
Low Temperature ◽  
Single Crystal ◽  
Electronic Transport ◽  
Oxide Shell ◽  
Core Shell ◽  
Promising Candidate ◽  
Manganese Silicide ◽  
Shell Nanowires ◽  
Electrical Connectors

Recently, core-shell nanowires have been proposed as potential electrical connectors for nanoelectronics components. A promising candidate is Mn5Si3 nanowires encapsulated in an oxide shell, due to their low reactivity and...

Low-temperature fabrication of SiOx-TiO2 core-shell nanowires for photocatalytic application

Vacuum ◽  
2019 ◽  
Vol 165 ◽  
pp. 51-57 ◽  
Author(s):  
M.S. Lebedev ◽  
S.Ya. Khmel ◽  
M.N. Lyulyukin ◽  
D.E. Petukhova ◽  
A.V. Barsukov
Keyword(s):  
Low Temperature ◽  
Core Shell ◽  
Photocatalytic Application ◽  
Shell Nanowires

Epitaxial ZnS/Si core–shell nanowires and single-crystal silicon tube field-effect transistors

2008 ◽  
Vol 310 (1) ◽  
pp. 165-170 ◽  
Author(s):  
Z.H. Chen ◽  
H. Tang ◽  
X. Fan ◽  
J.S. Jie ◽  
C.S. Lee ◽  
...  
Keyword(s):  
Single Crystal ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Single Crystal Silicon ◽  
Core Shell ◽  
Crystal Silicon ◽  
Silicon Tube ◽  
Shell Nanowires

Low temperature solution-phase growth of ZnSe and ZnSe/CdSe core/shell nanowires

Nanoscale ◽  
2011 ◽  
Vol 3 (8) ◽  
pp. 3145 ◽  
Author(s):  
Nattasamon Petchsang ◽  
Liubov Shapoval ◽  
Felix Vietmeyer ◽  
Yanghai Yu ◽  
Jose H. Hodak ◽  
...  
Keyword(s):  
Low Temperature ◽  
Solution Phase ◽  
Core Shell ◽  
Phase Growth ◽  
Cdse Core ◽  
Temperature Solution ◽  
Shell Nanowires

scholarly journals GaN/Ga2O3 Core/Shell Nanowires Growth: Towards High Response Gas Sensors

2019 ◽  
Vol 9 (17) ◽  
pp. 3528
Author(s):  
Quang Chieu Bui ◽  
Ludovic Largeau ◽  
Martina Morassi ◽  
Nikoletta Jegenyes ◽  
Olivia Mauguin ◽  
...  
Keyword(s):  
Shell Growth ◽  
Oxide Shell ◽  
Core Shell ◽  
Special Focus ◽  
Epitaxial Relationship ◽  
Nanowires Growth ◽  
Edx Analyses ◽  
Promising Solution ◽  
The Impact ◽  
Shell Nanowires

The development of sensors working in a large range of temperature is of crucial importance in areas such as monitoring of industrial processes or personal tracking using smart objects. Devices integrating GaN/Ga2O3 core/shell nanowires (NWs) are a promising solution for monitoring carbon monoxide (CO). Because the performances of sensors primarily depend on the material properties composing the active layer of the device, it is essential to control them and achieve material synthesis in the first time. In this work, we investigate the synthesis of GaN/Ga2O3 core-shell NWs with a special focus on the formation of the shell. The GaN NWs grown by plasma-assisted molecular beam epitaxy, are post-treated following thermal oxidation to form a Ga2O3-shell surrounding the GaN-core. We establish that the shell thickness can be modulated from 1 to 14 nm by changing the oxidation conditions and follows classical oxidation process: A first rapid oxide-shell growth, followed by a reduced but continuous oxide growth. We also discuss the impact of the atmosphere on the oxidation growth rate. By combining XRD-STEM and EDX analyses, we demonstrate that the oxide-shell is crystalline, presents the β-Ga2O3 phase, and is synthesized in an epitaxial relationship with the GaN-core.

Fabrication of Nanocomposite Based on ZnO Nanowire

2008 ◽  
Vol 8 (9) ◽  
pp. 4895-4898
Author(s):  
Sun Sook Lee ◽  
Hyun Jin Kim ◽  
Taek-Mo Chung ◽  
Young Kuk Lee ◽  
Chang Gyoun Kim ◽  
...  
Keyword(s):  
Low Temperature ◽  
Atomic Layer ◽  
Thermal Reduction ◽  
Zno Nanowires ◽  
Core Shell ◽  
Zno Nanoparticle ◽  
Zno Nanowire ◽  
Si Substrates ◽  
Layer Deposition ◽  
Shell Nanowires

ZnO-NiO core–shell nanowires and Ni-ZnO nanoparticle–nanowire composites have been synthesized by atomic layer deposition (ALD) and H2 thermal reduction, respectively. Grown ZnO nanowires on Si substrates by vapor transport method were used as templates for the growth of NiO layers. In order to prevent interfacial interaction between deposited NiO and ZnO nanowires templates by the reaction at low temperature and to precisely control the thickness of NiO layer, ALD technique was suitably employed to form the ZnO-NiO core–shell nanowires. All surface area of ZnO nanowires was completely and uniformly covered by amorphous NiO layers at low temperature of 130 °C. The Ni-ZnO nanoparticle–nanowire composites were achieved by the thermal reduction of the ZnO-NiO core–shell nanowires at H2 atmosphere. The density of Ni nanoparticles on ZnO nanowires was roughly related to the pre-deposited NiO thickness and the inter-diffusion of Ni into the ZnO nanowire was not observed.

scholarly journals A simple low temperature synthesis route for ZnO–MgO core–shell nanowires

2008 ◽  
Vol 19 (46) ◽  
pp. 465603 ◽  
Author(s):  
N O V Plank ◽  
H J Snaith ◽  
C Ducati ◽  
J S Bendall ◽  
L Schmidt-Mende ◽  
...  
Keyword(s):  
Low Temperature ◽  
Core Shell ◽  
Low Temperature Synthesis ◽  
Temperature Synthesis ◽  
Synthesis Route ◽  
Shell Nanowires

scholarly journals GaN/Ga2O3 Core/Shell Nanowires Growth: Nanostructures for Future CO-Sensors Developments

2019 ◽  
Author(s):  
Quang Chieu Bui ◽  
Ludovic Largeau ◽  
Martina Morassi ◽  
Nikoletta Jegenyes ◽  
Olivia Mauguain ◽  
...  
Keyword(s):  
Thermal Oxidation ◽  
High Sensitivity ◽  
Oxide Shell ◽  
Core Shell ◽  
Special Focus ◽  
Epitaxial Relationship ◽  
Nanowires Growth ◽  
Promising Solution ◽  
First Time ◽  
Shell Nanowires

The development of sensors for monitoring Carbon Monoxide (CO) in a large range of temperature is of crucial importance in areas as monitoring of industrial processes or personal tracking using smart objects. Devices integrating GaN/Ga2O3 core/shell nanowires (NWs) is a promising solution allowing combining the high sensitivity of the electronic properties to the states of GaN-core surface; and the high sensitivity to CO of Ga2O3-shell. Because the performances of sensors primarily depend on the material properties composing the active layer of the device, it is essential to control these properties and in first time its synthesis. In this work, we investigate the synthesis of GaN/Ga2O3 core-shell NWs with a special focus on the formation of the shell. The GaN NWs grown by Plasma-assisted molecular beam epitaxy, are post-treated following thermal oxidation to form Ga2O3-shell surrounding the GaN-core. We establish that the Ga2O3-shell thickness can be modulated from 1 up to 14 nm by changing the oxidation conditions, and follows the diffuse-controlled reaction. By combining XRD-STEM and EDX analysis, we also demonstrate that the oxide shell formed by thermal oxidation is crystalline and presents the β-Ga2O3 crystalline phase, and is synthesized in epitaxial relationship with the GaN-core.

Single‐Crystal ZnO/AlN Core/Shell Nanowires for Ultraviolet Emission and Dual‐Color Ultraviolet Photodetection

2019 ◽  
Vol 7 (6) ◽  
pp. 1801522 ◽  
Author(s):  
Daotong You ◽  
Chunxiang Xu ◽  
Jie Zhao ◽  
Feifei Qin ◽  
Wei Zhang ◽  
...  
Keyword(s):  
Single Crystal ◽  
Core Shell ◽  
Ultraviolet Emission ◽  
Dual Color ◽  
Shell Nanowires

Emission Enhancement of SiC/SiO2 Core/Shell Nanowires Induced by the Oxide Shell

2012 ◽  
Vol 717-720 ◽  
pp. 557-560 ◽  
Author(s):  
Filippo Fabbri ◽  
Francesca Rossi ◽  
Giovanni Attolini ◽  
Matteo Bosi ◽  
Giancarlo Salviati ◽  
...  
Keyword(s):  
Band Gap ◽  
Band Edge ◽  
Oxide Shell ◽  
Near Band Edge ◽  
Core Shell ◽  
Type I ◽  
Edge Luminescence ◽  
Sio2 Shell ◽  
Band Edge Luminescence ◽  
Shell Nanowires

In this work we report the enhancement of the 3C-SiC band edge luminescence induced by the SiO2 shell in SiC/SiO2 core/shell nanowires (NWs) system. We demonstrate that the shell enhances the SiC near band edge luminescence and we argue the formation of a type-I quantum well between the SiC core and the SiO2 shell, with the consequent injection of carriers from the larger band-gap shell to the narrower band-gap core.

scholarly journals Ge/Si core/shell nanowires with controlled low temperature grown Si shell thickness (Phys. Status Solidi A 7∕2015)

2015 ◽  
Vol 212 (7) ◽  
Author(s):  
Tomohiro Noguchi ◽  
Koudai Morita ◽  
Marolop Simanullang ◽  
Zhengyu Xu ◽  
Koichi Usami ◽  
...  
Keyword(s):  
Low Temperature ◽  
Shell Thickness ◽  
Core Shell ◽  
Shell Nanowires
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