scholarly journals A non-oxidizing fabrication method for lithographic break junctions of sensitive metals

2020 ◽  
Vol 2 (9) ◽  
pp. 3829-3833
Author(s):  
Anna Nyáry ◽  
Agnes Gubicza ◽  
Jan Overbeck ◽  
László Pósa ◽  
Péter Makk ◽  
...  

An oxygen-free lithographical fabrication method enables room temperature atomic switches terminated by oxygen sensitive metals.

Author(s):  
R. Lo Frano ◽  
M. Puccini ◽  
E. Stefanelli ◽  
M. Luppichini ◽  
C. Grima ◽  
...  

In the past decades many R&D efforts have been spent in the development of a suitable Li4SiO4 fabrication method (e.g., melt spray process, graphite bed method, capillary-based microfluidic wet method etc.), nevertheless we are still far from an “industrial standard solution”. The aim of the paper is to develop a new fabrication method capable to produce stable and well-sized pebbles of lithium orthosilicate (Li4SiO4) based on the drip casting. This method is mainly based on the dripping at room temperature, which is novel in the framework of available fabrication processes requiring high temperature: this latter is demonstrated to affect the final product characteristics. It is worthy to remark that the Li4SiO4 is a candidate material for the breeding blanket material of the fusion power reactor. In the paper we will describe the experimental apparatus, designed and built at DICI - University of Pisa with the collaboration of Bitossi Industries, and the procedure adopted in order to produce pebbles of Li4SiO4.


1998 ◽  
Vol 53 (3) ◽  
pp. 333-348 ◽  
Author(s):  
Nils Wiberg ◽  
Kerstin Amelunxen ◽  
Hans-Wolfram Lemer ◽  
Heinrich Nöth ◽  
Jörg Knizek ◽  
...  

Abstract Water and oxygen sensitive compounds (tBu3SiEX2)2, tBu3SiEX2 Do and (tBu3Si)2EX (E = AI, Ga, In; X = (F), Cl, Br; Do = OR2, NR3) have been synthezised by reaction of EX3 with tBu3SiNa in the absence or presence of donors. In addition, (tBu3Si)AlBr2, (tBu3Si)2InF and tBu3SiInBr2 were prepared by reaction of AlBr3 with (tBu3Sij2Zn or of (tBu3Si)2In- In(Si/Bu3)2 with AgF2 and HBr, respectively. The adduct [tBu3SiAlBr2 · AlBr3 ·1/2MgBr2]2 is formed from AlBr3 and (tBu3Si)2Mg(THF)2. Thermal decomposition of the compounds in solution or in the gas phase leads to the formation of tBu3SiEX2 (from the dimers or the donor adducts) and of tBu3SiX. The Lewis acidity of tBu3SiEX2 against donors increases in the direction Do = Et2O < THF < NEtMe2. Dehalogenation of (tBu3Si)2ECl with tBu3SiNa(THF)2 in pentane at room temperature leads to clusters (tBu3Si)4Al2, (tBu3Si)3Ga2•, (tBu3Si)4In2 and (tBu3Si)3Ga2Na(THF)3, reduction of tBu3SiGaCl2 with Na or K in heptane at 100°C to the tetrahedran (tBu3Si)4Ga4. The structures of (tBu3SiGaCl2)2, (tBu3Si)2GaCl, and [tBu3SiAlBr2 AlBr3 ·1/2MgBr2]2 have been determined by X-ray structure analysis.


2019 ◽  
Author(s):  
Jiajun Du ◽  
Fan Liao ◽  
Ziye Wu ◽  
Wenhuan Huang ◽  
Fei Li ◽  
...  

N-Substituted naphthalene diimides (NDIs) were explored as purely organic room temperature phosphorescence (RTP) materials based on the strategy of intramolecular charge-transfer (ICT) mediation. A series of NDIs were designed and investigated for their luminescence properties. All emissive NDIs exhibited similar red RTP (emission range from ~600 to ~800 nm) in solid state media; the quantum yield (QY) of the obtained RTP relies heavily on the N-substitution. From poor to moderate to strong donor moieties, the QY increases but suddenly disappears. First-principle calculations reveal that a “sweet spot” for strong NDI RTP exists: while a suitable charge-transfer state can enhance RTP, a strong donor may cause total triplet quenching through the photo-induced electron transfer (PET) mechanism. Furthermore, combining NDI aggregation effects, we realized the reddest RTP ever reported for purely organic materials (Max emission = 675 nm, QY = 21.7%). Given the red emission, respectable QY and oxygen sensitive properties for some of the NDIs, they were tested as imaging agents for in vivo imaging studies.


2012 ◽  
Vol 85 (23) ◽  
Author(s):  
Ruoyu Chen ◽  
Patrick J. Wheeler ◽  
D. Natelson

Nanomaterials ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 134
Author(s):  
Ricardo López Antón ◽  
Juan Pedro Andrés ◽  
Mihail Ipatov ◽  
Juan Antonio González ◽  
Julián González ◽  
...  

Cu100−xCox thin films have been obtained by sputtering (x = 3, 9) and sputter gas aggregation (x = 2.5, 7.5) and subsequent annealing at 400 °C for 1 h. We have studied their structural, magnetic, and magnetotransport properties, both for the as-deposited and annealed samples, confirming the important role of the fabrication method in the properties. The magnetic measurements and the fitting of the hysteresis loops evidence that as-deposited samples consist of superparamagnetic (SPM) and/or ferromagnetic clusters, but in the samples obtained by gas aggregation the clusters are greater (with ferromagnetic behavior at room temperature) whereas in the samples obtained by sputtering, the clusters are smaller and there are also diluted Co atoms in the Cu matrix. The annealing affects negligibly the samples obtained by gas aggregation, but the ones obtained by sputtering are more affected, appearing greater clusters. This behavior is also reflected in the magnetoresistance (MR) measurements of the samples, with different shapes of the MR curves depending on the preparation method: more lineal in the whole range for sputtering, saturation at low fields (about 10 kOe) for gas aggregation. Finally, a Kondo-like minimum in the resistance versus temperature is found in the samples obtained by sputtering, affected by the magnetic field and the annealing. The observed Kondo-like behavior and the influence of annealing on a Kondo-like minimum in sputtered thin films have been attributed to the presence of diluted Co atoms in the Cu matrix and the Co precipitations from the Co–Cu solid solution upon annealing respectively.


Nanowires ◽  
1997 ◽  
pp. 263-274
Author(s):  
C. Zhou ◽  
C. J. Muller ◽  
M. R. Deshpande ◽  
J. McCormack ◽  
M. A. Reed

2017 ◽  
Vol 53 (81) ◽  
pp. 11193-11196 ◽  
Author(s):  
Shun-ichi Funano ◽  
Nobutoshi Ota ◽  
Asako Sato ◽  
Yo Tanaka

A fabrication method of a “post-molecule/cell patterned” glass microchip was developed by pressure-based bonding and patterning with a fluorosilane coupling reagent.


2015 ◽  
Vol 98 (3) ◽  
pp. 687-689 ◽  
Author(s):  
Hanna Kähäri ◽  
Merja Teirikangas ◽  
Jari Juuti ◽  
Heli Jantunen

Author(s):  
Jiajun Du ◽  
Fan Liao ◽  
Ziye Wu ◽  
Wenhuan Huang ◽  
Fei Li ◽  
...  

N-Substituted naphthalene diimides (NDIs) were explored as purely organic room temperature phosphorescence (RTP) materials based on the strategy of intramolecular charge-transfer (ICT) mediation. A series of NDIs were designed and investigated for their luminescence properties. All emissive NDIs exhibited similar red RTP (emission range from ~600 to ~800 nm) in solid state media; the quantum yield (QY) of the obtained RTP relies heavily on the N-substitution. From poor to moderate to strong donor moieties, the QY increases but suddenly disappears. First-principle calculations reveal that a “sweet spot” for strong NDI RTP exists: while a suitable charge-transfer state can enhance RTP, a strong donor may cause total triplet quenching through the photo-induced electron transfer (PET) mechanism. Furthermore, combining NDI aggregation effects, we realized the reddest RTP ever reported for purely organic materials (Max emission = 675 nm, QY = 21.7%). Given the red emission, respectable QY and oxygen sensitive properties for some of the NDIs, they were tested as imaging agents for in vivo imaging studies.


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