scholarly journals Interfacial reconstruction in La0.7Sr0.3MnO3 thin films: giant low-field magnetoresistance

2020 ◽  
Vol 2 (7) ◽  
pp. 2792-2799
Author(s):  
Umesh Kumar Sinha ◽  
Bibekananda Das ◽  
Prahallad Padhan
Keyword(s):  

The 200 Å thick La0.7Sr0.3MnO3 film grown on (001) oriented LaAlO3 at 300 mT field exhibits 60% MR, which decreases with an increase in the La0.7Sr0.3MnO3 film thickness due to a decrease in the non-collinear Mn ion spins near the interface.

2001 ◽  
Vol 89 (11) ◽  
pp. 6970-6972 ◽  
Author(s):  
N. K. Todd ◽  
N. D. Mathur ◽  
M. G. Blamire

1997 ◽  
Vol 493 ◽  
Author(s):  
J. F. Shepard ◽  
F. Chu ◽  
B. Xu ◽  
S. Trolier-McKinstry

ABSTRACTLead zirconate titanate (PZT) thin films are currently employed in non-volatile ferroelectric memories (FRAM's) and are intended to be used as the active material in a number of microelectromechanical systems (MEMS). Several groups have reported that both the piezoelectric and dielectric characteristics of ferroelectric thin films improve with an increase of film thickness, though the reasons for those improvements are unclear. Previous investigations on the effects of biaxial mechanical stress indicate that non-180° domain wall motion is limited in PZT 52/48 films less than 0.5 μm thick. It is possible that some of the improvements of the dielectric and piezoelectric characteristics reported for thicker films (i.e. films thicker than 0.5 μm) are associated with an increase of extrinsic contributions to the properties. To evaluate domain wall mobility in thicker films, the high and low-field stress response of sol-gel PZT fabricated with either rapid thermal processing or conventional furnace annealing were investigated. Films with thicknesses ranging from 0.6 to 5.0 μm thick were measured as a function of applied biaxial stress (±110 MPa). It was found that for all films tested the changes of capacitance were on the order of 2–3%. High-field measurements showed: (1) the coercive field to be insensitive to applied stress, (2) remanent polarizations to decrease about 20% at the maximum applied tension, (3) remanent polarizations to increase less than 10% with applied compression, and (4) all changes to be reversible over the stress range investigated. These results suggest that extrinsic contributions are limited for the films tested.


1998 ◽  
Vol 536 ◽  
Author(s):  
A. B. Pevtsov ◽  
N. A. Feoktistov ◽  
V. G. Golubev

AbstractThin (<1000 Å) hydrogenated nanocrystalline silicon films are widely used in solar cells, light emitting diodes, and spatial light modulators. In this work the conductivity of doped and undoped amorphous-nanocrystalline silicon thin films is studied as a function of film thickness: a giant anisotropy of conductivity is established. The longitudinal conductivity decreases dramatically (by a factor of 109 − 1010) as the layer thickness is reduced from 1500 Å to 200 Å, while the transverse conductivity remains close to that of a doped a- Si:H. The data obtained are interpreted in terms of the percolation theory.


Coatings ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 510
Author(s):  
Yongqiang Pan ◽  
Huan Liu ◽  
Zhuoman Wang ◽  
Jinmei Jia ◽  
Jijie Zhao

SiO2 thin films are deposited by radio frequency (RF) plasma-enhanced chemical vapor deposition (PECVD) technique using SiH4 and N2O as precursor gases. The stoichiometry of SiO2 thin films is determined by the X-ray photoelectron spectroscopy (XPS), and the optical constant n and k are obtained by using variable angle spectroscopic ellipsometer (VASE) in the spectral range 380–1600 nm. The refractive index and extinction coefficient of the deposited SiO2 thin films at 500 nm are 1.464 and 0.0069, respectively. The deposition rate of SiO2 thin films is controlled by changing the reaction pressure. The effects of deposition rate, film thickness, and microstructure size on the conformality of SiO2 thin films are studied. The conformality of SiO2 thin films increases from 0.68 to 0.91, with the increase of deposition rate of the SiO2 thin film from 20.84 to 41.92 nm/min. The conformality of SiO2 thin films decreases with the increase of film thickness, and the higher the step height, the smaller the conformality of SiO2 thin films.


Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1409
Author(s):  
Ofelia Durante ◽  
Cinzia Di Giorgio ◽  
Veronica Granata ◽  
Joshua Neilson ◽  
Rosalba Fittipaldi ◽  
...  

Among all transition metal oxides, titanium dioxide (TiO2) is one of the most intensively investigated materials due to its large range of applications, both in the amorphous and crystalline forms. We have produced amorphous TiO2 thin films by means of room temperature ion-plasma assisted e-beam deposition, and we have heat-treated the samples to study the onset of crystallization. Herein, we have detailed the earliest stage and the evolution of crystallization, as a function of both the annealing temperature, in the range 250–1000 °C, and the TiO2 thickness, varying between 5 and 200 nm. We have explored the structural and morphological properties of the as grown and heat-treated samples with Atomic Force Microscopy, Scanning Electron Microscopy, X-ray Diffractometry, and Raman spectroscopy. We have observed an increasing crystallization onset temperature as the film thickness is reduced, as well as remarkable differences in the crystallization evolution, depending on the film thickness. Moreover, we have shown a strong cross-talking among the complementary techniques used displaying that also surface imaging can provide distinctive information on material crystallization. Finally, we have also explored the phonon lifetime as a function of the TiO2 thickness and annealing temperature, both ultimately affecting the degree of crystallinity.


Coatings ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 23
Author(s):  
Weiguang Zhang ◽  
Jijun Li ◽  
Yongming Xing ◽  
Xiaomeng Nie ◽  
Fengchao Lang ◽  
...  

SiO2 thin films are widely used in micro-electro-mechanical systems, integrated circuits and optical thin film devices. Tremendous efforts have been devoted to studying the preparation technology and optical properties of SiO2 thin films, but little attention has been paid to their mechanical properties. Herein, the surface morphology of the 500-nm-thick, 1000-nm-thick and 2000-nm-thick SiO2 thin films on the Si substrates was observed by atomic force microscopy. The hardnesses of the three SiO2 thin films with different thicknesses were investigated by nanoindentation technique, and the dependence of the hardness of the SiO2 thin film with its thickness was analyzed. The results showed that the average grain size of SiO2 thin film increased with increasing film thickness. For the three SiO2 thin films with different thicknesses, the same relative penetration depth range of ~0.4–0.5 existed, above which the intrinsic hardness without substrate influence can be determined. The average intrinsic hardness of the SiO2 thin film decreased with the increasing film thickness and average grain size, which showed the similar trend with the Hall-Petch type relationship.


2020 ◽  
Vol 102 (21) ◽  
Author(s):  
Stephan Geprägs ◽  
Björn Erik Skovdal ◽  
Monika Scheufele ◽  
Matthias Opel ◽  
Didier Wermeille ◽  
...  

2006 ◽  
Vol 384 (1-2) ◽  
pp. 271-273 ◽  
Author(s):  
A.D.C. Viegas ◽  
L. Santi ◽  
M.A. Correa ◽  
R.B. da Silva ◽  
A.M.H. de Andrade ◽  
...  

2017 ◽  
Vol 162 ◽  
pp. 01042
Author(s):  
Yen Chin Teh ◽  
Ala’eddin A. Saif ◽  
Zul Azhar Zahid Jamal ◽  
Prabakaran Poopalan

Author(s):  
T. M. Correia ◽  
Q. Zhang

Full-perovskite Pb 0.87 Ba 0.1 La 0.02 (Zr 0.6 Sn 0.33 Ti 0.07 )O 3 (PBLZST) thin films were fabricated by a sol–gel method. These revealed both rhombohedral and tetragonal phases, as opposed to the full-tetragonal phase previously reported in ceramics. The fractions of tetragonal and rhombohedral phases are found to be strongly dependent on film thickness. The fraction of tetragonal grains increases with increasing film thickness, as the substrate constraint throughout the film decreases with film thickness. The maximum of the dielectric constant ( ε m ) and the corresponding temperature ( T m ) are thickness-dependent and dictated by the fraction of rhombohedral and tetragonal phase, with ε m reaching a minimum at 400 nm and T m shifting to higher temperature with increasing thickness. With the thickness increase, the breakdown field decreases, but field-induced antiferroelectric–ferroelectric ( E AFE−FE ) and ferroelectric–antiferroelectric ( E FE−AFE ) switch fields increase. The electrocaloric effect increases with increasing film thickness. This article is part of the themed issue ‘Taking the temperature of phase transitions in cool materials’.


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