scholarly journals In situ TEM observation of void formation and migration in phase change memory devices with confined nanoscale Ge2Sb2Te5

2020 ◽  
Vol 2 (9) ◽  
pp. 3841-3848
Author(s):  
Sang Ho Oh ◽  
Kyungjoon Baek ◽  
Sung Kyu Son ◽  
Kyung Song ◽  
Jang Won Oh ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Void Formation ◽  
In Situ Tem ◽  
Memory Devices ◽  
Device Failure ◽  
And Migration ◽  
Change Memory

Void formation and migration that drive the device failure of Ge2Sb2Te5 (GST)-based practical devices were revealed via in situ TEM.

Investigation of Phase Change Memory Confined Cell Endurance Using Transmission Electron Microscopy

2016 ◽  
Author(s):  
Yu Zhu ◽  
S. Kim ◽  
J. Gonsalves ◽  
M. Brightsky ◽  
N. Sosa ◽  
...  
Keyword(s):  
Phase Change ◽  
Healing Process ◽  
Phase Change Memory ◽  
Void Formation ◽  
Memory Cell ◽  
In Situ Tem ◽  
Self Healing ◽  
Tem Analysis ◽  
Transmission Electron ◽  
Change Memory

Abstract The endurance performance of a novel confined phase change memory cell with metallic nitride liner is investigated using a transmission electron microscope (TEM). Write endurance has been shown to be substantially improved by this new structure [1]. Memory cells that had been cycled up to 109 were cross-sectioned and studied using the TEM. A majority of the electrically observed endurance failure mechanisms were stuck-SET. Physical failure analysis showed the failed cell is always associated with large void formation and material segregation. In-situ TEM analysis was used to study the void formation, accumulation and movement, where the memory cell was simultaneously operated and imaged in the TEM. Also, an interesting self-healing process of the void was recorded during the set/reset operation.

scholarly journals Modeling of void formation in phase change memory devices

2020 ◽  
Vol 164 ◽  
pp. 107684
Author(s):  
Adam Cywar ◽  
Zachary Woods ◽  
SangBum Kim ◽  
Matt BrightSky ◽  
Norma Sosa ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Void Formation ◽  
Memory Devices ◽  
Change Memory

Precision of synaptic weights programmed in phase-change memory devices for deep learning inference

2020 ◽  
Author(s):  
S. R. Nandakumar ◽  
Irem Boybat ◽  
Jin-Ping Han ◽  
Stefano Ambrogio ◽  
Praneet Adusumilli ◽  
...  
Keyword(s):  
Deep Learning ◽  
Phase Change ◽  
Phase Change Memory ◽  
Memory Devices ◽  
Change Memory

Modeling of Atomic Migration Phenomena in Phase Change Memory Devices

2015 ◽  
Author(s):  
Luca Crespi ◽  
Andrea Lacaita ◽  
Mattia Boniardi ◽  
Enrico Varesi ◽  
Andrea Ghetti ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Memory Devices ◽  
Change Memory

Phase-change memory devices based on gallium-doped indium oxide

2009 ◽  
Vol 94 (11) ◽  
pp. 113503 ◽  
Author(s):  
S.-L. Wang ◽  
C.-Y. Chen ◽  
M.-K. Hsieh ◽  
W.-C. Lee ◽  
A. H. Kung ◽  
...  
Keyword(s):  
Phase Change ◽  
Indium Oxide ◽  
Phase Change Memory ◽  
Memory Devices ◽  
Change Memory

Holistic Integrated Process Solutions for Patterning Phase Change Memory Devices

2021 ◽  
Vol MA2021-01 (21) ◽  
pp. 846-846
Author(s):  
John Hoang ◽  
Meihua Shen ◽  
Thorsten Lill ◽  
Danna Qian ◽  
Aaron Routzahn ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Memory Devices ◽  
Integrated Process ◽  
Process Solutions ◽  
Change Memory

scholarly journals High Speed Test System of Current Pulse for Phase Change Memory Devices

2019 ◽  
Vol 1237 ◽  
pp. 042064
Author(s):  
Yuhan Wang ◽  
Ziqiang Zeng ◽  
Yuchan Wang ◽  
Xia Xu ◽  
Liangling Gu
Keyword(s):  
Phase Change ◽  
Current Pulse ◽  
High Speed ◽  
Phase Change Memory ◽  
Test System ◽  
Memory Devices ◽  
Speed Test ◽  
Change Memory

Scalable CGeSbTe-based phase change memory devices employing U-shaped cells

2017 ◽  
Vol 634 ◽  
pp. 141-146
Author(s):  
J.H. Park ◽  
J.H. Kim ◽  
D.-H. Ko ◽  
Z. Wu ◽  
D.H. Ahn ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Memory Devices ◽  
Change Memory
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