A broadband ultraviolet light source using GaN quantum dots formed on hexagonal truncated pyramid structures
Keyword(s):
Broadband ultraviolet solid-state light emitter has been demonstrated based on the combined structure of MOCVD grown microstructure and the MBE grown quantum dots, thanks to the strain inhomogeneity of the multi-facet semiconductor microstructure.
1996 ◽
Vol 24
(Supplement)
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pp. 58-61
2016 ◽
Vol E99.C
(3)
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pp. 381-384
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2019 ◽
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2016 ◽
Vol 4
(38)
◽
pp. 9027-9035
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