scholarly journals Key role of the meniscus shape in crystallization of organic semiconductors during meniscus-guided coating

2020 ◽  
Vol 7 (6) ◽  
pp. 1631-1640 ◽  
Author(s):  
Ke Zhang ◽  
Zuyuan Wang ◽  
Tomasz Marszalek ◽  
Michal Borkowski ◽  
George Fytas ◽  
...  
Keyword(s):  
Organic Semiconductors ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Film Formation ◽  
Meniscus Shape

The crystallization and film formation of organic semiconductors are controlled by the meniscus shape during meniscus guided coating for field-effect transistors.

Molecular Requirements for Printable Organic Semiconductors in 7-Alkyl-2-phenyl[1]benzothieno[3,2-b][1]benzothiophenes (Ph-BTBT-Cn’s)

MRS Advances ◽  
2016 ◽  
Vol 1 (38) ◽  
pp. 2653-2658
Author(s):  
S. Inoue ◽  
H. Minemawari ◽  
J. Tsutsumi ◽  
T. Hamai ◽  
S. Arai ◽  
...  
Keyword(s):  
Chain Length ◽  
Organic Semiconductors ◽  
Field Effect ◽  
High Performance ◽  
Carrier Transport ◽  
Alkyl Chain ◽  
Field Effect Transistors ◽  
Systematic Investigation ◽  
Alkyl Chain Length

ABSTRACTHere we discuss requirements for high performance and solution processable organic semiconductors, by presenting a systematic investigation of 7-alkyl-2-phenyl[1]benzothieno[3,2-b][1]benzothiophenes (Ph-BTBT-Cn’s). We found that the solubility and thermal properties of Ph-BTBT-Cn’s depend systematically on the substituted alkyl-chain length n. The observed features are well understood in terms of the change of molecular packing motif with n: The compounds with n ≤ 4 do not form independent alkyl chain layers, whereas those with n ≥ 5 form isolated alkyl chain layers. The latter compounds afford a series of isomorphous bilayer-type crystal structures that form two-dimensional carrier transport layers within the crystals. We also show that the Ph-BTBT-C10 afford high performance single-crystalline field-effect transistors the mobility of which reaches as high as 15.9 cm2/Vs. These results demonstrate a crucial role of the substituted alkyl chain length for obtaining high performance organic semiconductors and field-effect transistors.

scholarly journals Influence of the Electrolyte Salt Concentration on DNA Detection with Graphene Transistors

Biosensors ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 24
Author(s):  
Agnes Purwidyantri ◽  
Telma Domingues ◽  
Jérôme Borme ◽  
Joana Rafaela Guerreiro ◽  
Andrey Ipatov ◽  
...  
Keyword(s):  
Phosphate Buffer ◽  
Species Interactions ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Limit Of Detection ◽  
Debye Length ◽  
Intermolecular Forces ◽  
Single Layer Graphene ◽  
Dna Adsorption

Liquid-gated Graphene Field-Effect Transistors (GFET) are ultrasensitive bio-detection platforms carrying out the graphene’s exceptional intrinsic functionalities. Buffer and dilution factor are prevalent strategies towards the optimum performance of the GFETs. However, beyond the Debye length (λD), the role of the graphene-electrolytes’ ionic species interactions on the DNA behavior at the nanoscale interface is complicated. We studied the characteristics of the GFETs under different ionic strength, pH, and electrolyte type, e.g., phosphate buffer (PB), and phosphate buffer saline (PBS), in an automatic portable built-in system. The electrostatic gating and charge transfer phenomena were inferred from the field-effect measurements of the Dirac point position in single-layer graphene (SLG) transistors transfer curves. Results denote that λD is not the main factor governing the effective nanoscale screening environment. We observed that the longer λD was not the determining characteristic for sensitivity increment and limit of detection (LoD) as demonstrated by different types and ionic strengths of measuring buffers. In the DNA hybridization study, our findings show the role of the additional salts present in PBS, as compared to PB, in increasing graphene electron mobility, electrostatic shielding, intermolecular forces and DNA adsorption kinetics leading to an improved sensitivity.

Elucidating the Role of Water‐Related Traps in the Operation of Polymer Field‐Effect Transistors

2021 ◽  
pp. 2100393
Author(s):  
Hamna F. Iqbal ◽  
Matthew Waldrip ◽  
Hu Chen ◽  
Iain McCulloch ◽  
Oana D. Jurchescu
Keyword(s):  
Field Effect ◽  
Field Effect Transistors

On Razors Edge: Influence of the Source Insulator Edge on the Charge Transport of Vertical Organic Field Effect Transistors

MRS Advances ◽  
2017 ◽  
Vol 2 (23) ◽  
pp. 1249-1257 ◽  
Author(s):  
F. Michael Sawatzki ◽  
Alrun A. Hauke ◽  
Duy Hai Doan ◽  
Peter Formanek ◽  
Daniel Kasemann ◽  
...  
Keyword(s):  
Charge Transport ◽  
Organic Semiconductors ◽  
Organic Solar Cells ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Electrical Power ◽  
Strong Impact ◽  
Organic Field Effect Transistor ◽  
Effect Transistor

ABSTRACTTo benefit from the many advantages of organic semiconductors like flexibility, transparency, and small thickness, electronic devices should be entirely made from organic materials. This means, additionally to organic LEDs, organic solar cells, and organic sensors, we need organic transistors to amplify, process, and control signals and electrical power. The standard lateral organic field effect transistor (OFET) does not offer the necessary performance for many of these applications. One promising candidate for solving this problem is the vertical organic field effect transistor (VOFET). In addition to the altered structure of the electrodes, the VOFET has one additional part compared to the OFET – the source-insulator. However, the influence of the used material, the size, and geometry of this insulator on the behavior of the transistor has not yet been examined. We investigate key-parameters of the VOFET with different source insulator materials and geometries. We also present transmission electron microscopy (TEM) images of the edge area. Additionally, we investigate the charge transport in such devices using drift-diffusion simulations and the concept of a vertical organic light emitting transistor (VOLET). The VOLET is a VOFET with an embedded OLED. It allows the tracking of the local current density by measuring the light intensity distribution.We show that the insulator material and thickness only have a small influence on the performance, while there is a strong impact by the insulator geometry – mainly the overlap of the insulator into the channel. By tuning this overlap, on/off-ratios of 9x105 without contact doping are possible.

Tailoring crystal polymorphs of organic semiconductors towards high-performance field-effect transistors

2016 ◽  
Vol 27 (8) ◽  
pp. 1330-1338 ◽  
Author(s):  
Yong-Gang Zhen ◽  
Huan-Li Dong ◽  
Lang Jiang ◽  
Wen-Ping Hu
Keyword(s):  
Organic Semiconductors ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors

The Maxwell-Wagner model for charge transport in ambipolar organic field-effect transistors: The role of zero-potential position

2012 ◽  
Vol 101 (24) ◽  
pp. 243302 ◽  
Author(s):  
Yasuhiro Mashiko ◽  
Dai Taguchi ◽  
Martin Weis ◽  
Takaaki Manaka ◽  
Mitsumasa Iwamoto
Keyword(s):  
Charge Transport ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Wagner Model ◽  
Zero Potential

scholarly journals 2,2'-(Arylenedivinylene)bis-8-hydroxyquinolines exhibiting aromatic π-π stacking interactions as solution-processable p-type organic semiconductors for high-performance organic field effect transistors

2021 ◽  
Author(s):  
Suman Yadav ◽  
Shivani Sharma ◽  
Satinder K Sharma ◽  
Chullikkattil P. Pradeep
Keyword(s):  
Organic Semiconductors ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Organic Thin Film ◽  
Effect Transistor ◽  
Solution Processable ◽  
P Type

Solution-processable organic semiconductors capable of functioning at low operating voltages (~5 V) are in demand for organic field-effect transistor (OFET) applications. Exploration of new classes of compounds as organic thin-film...

Sign in / Sign up

Export Citation Format

Share Document