scholarly journals Effect of access resistance on the experimentally measured temperature–carrier mobility dependence in highly-crystalline DNTT-based transistors

2020 ◽  
Vol 1 (6) ◽  
pp. 1799-1804
Author(s):  
Qijing Wang ◽  
Sai Jiang ◽  
Yi Shi ◽  
Yun Li

The carrier mobility–temperature dependence obtained from DNTT OFETs can be tuned by the access resistance and the molecular packing in bulk regime.

2009 ◽  
Vol 283-286 ◽  
pp. 155-160
Author(s):  
Ivo Stloukal ◽  
Jiří Čermák

Self-diffusion of 110mAg has been investigated in fiber reinforced QE22 magnesium alloy matrix composite. Short Saffil fibers (97% -Al2O3 + 3% SiO2) were used as reinforcement. The diffusion measurements were carried out in the temperature interval 648 – 728 K by serial sectioning method. The volume diffusion coefficients Dv (alloy without reinforcement) and the effective diffusion coefficients Deff (alloy with reinforcement) were obtained by analysis of the penetration curves. The silver diffusion coefficient in the interface boundary matrix/Saffil Di was also estimated. The temperature dependence of volume diffusion coefficients Dv was compared with previous data measured using 65Zn in the same alloy and with literature data for Zn impurity diffusion in Mg single crystal. It was observed, that the temperature dependence of both Deff and Di was significantly non-linear in the measured temperature interval. This behavior supports previous observations with zinc diffusion in the same alloy.


1999 ◽  
Vol 54 (2) ◽  
pp. 95-100 ◽  
Author(s):  
G. Spinolo ◽  
P. Ghigna ◽  
G. Chiodelli ◽  
M. Ferretti ◽  
G. Flor

Abstract DC conductivity measurements between 15 and 300 K are reported for SmBa2 Cu3O6+x samples with different oxygen doping amounts (x) produced by annealing under appropriate high temperature and oxygen pressure conditions and quenching. Samples with x≥0.5 are superconductors: Tc ~60 K at x=0.7, Tc >80 K at ; x=0.9. The transition from superconduction to non-superconduction corresponds to the tetragonal to orthorhombic structural tran-sition and to the transition from semiconducting to metallic temperature dependence of the resistivity. Oxygen doping causes a sudden increase of hole mobility near x=0.5. Below this threshold, the be-havior of the carrier mobility is in agreement with an Anderson localization.


2003 ◽  
Vol 771 ◽  
Author(s):  
Antonio Facchetti ◽  
Myung-Han Yoon ◽  
Howard E. Katz ◽  
Melissa Mushrush ◽  
Tobin J. Marks

AbstractOrganic semiconductors exhibiting complementary-type carrier mobility are the key components for the development of the field of “gplastic electronics” We present here a novel series of α,ω- and isomerically pure ββ'-diperfluorohexyl-substituted thiophene and study the impact of fluoroalkyl substitution and conjugation length vis-a-vis the corresponding fluorinefree analogues. Trends between the fluorinated and fluorine-free families in molecular packing, HOMO-LUMO gap, and π-π interactions are found to be strikingly similar. TFT measurements indicate that all members of the fluorinated series are n-type semiconductors


2014 ◽  
Vol 47 (9) ◽  
pp. 2883-2890 ◽  
Author(s):  
Bob C. Schroeder ◽  
Stephan Rossbauer ◽  
R. Joseph Kline ◽  
Laure Biniek ◽  
Scott E. Watkins ◽  
...  

2007 ◽  
Vol 22 (10) ◽  
pp. 2943-2952
Author(s):  
R. Ang ◽  
Y.P. Sun ◽  
G.H. Zheng ◽  
W.H. Song

The structure, magnetization M, resistivity ρ, thermoelectric power S, and thermal conductivity κ in La0.9Te0.1Mn1−xCoxO3 (0 ≤ x ≤ 1) have been investigated systematically. The samples with x = 0 and x = 1 have a rhombohedral lattice with space group R¯3C, while the samples with x = 0.25, 0.50, and 0.75 have an orthorhombic lattice with space group Pbnm. The samples of 0 ≤ x ≤ 0.75 undergo the paramagnetic–ferromagnetic (PM–FM) phase transition. Based on the temperature dependence of susceptibility, a combination of the high-spin (HS) state for Co2+ and the low-spin (LS) state for Co3+ can be determined. The metal–insulator transitions (MIT) observed for x = 0 sample are completely suppressed with Co-doping, and ρ(T) displays semiconducting behavior within the measured temperature region for x > 0 samples. As x ⩾ 0.25, the huge magnitude of Seebeck coefficient at low temperatures is observed, which is suggested to originate from the spin-state transition of Co3+ ions from intermediate-spin (IS) state or (HS) state to (LS) state and the configurational entropy of charge carriers enhanced by their spin and orbital degeneracy between Co2+ and Co3+ sites. Particularly, S(T) of x = 0.50 and 0.75 samples appears an anomalous peak, which is suggested to be related to the contribution of phonon drag. Similar to M(T) and ρ(T), all results of S(T) are discussed according to the variations of the structure parameters and magnetic exchange interaction caused by Co-doping. In addition, based on the analysis of the temperature dependence of S(T) and ρ(T), the transport mechanism can be determined in the different temperature region. As to thermal conduction κ(T), the changes of κ with Co-doping is suggested to come from the combined effect due to the suppression of local Mn3+O6 Jahn–Teller (JT) lattice distortion because of the substitution of non JT Co3+ ions with LS and HS states for JT Mn3+ ions, which results in the increase of κ, and the introduction of the disorder due to Co-doping, which contributes to the decrease of κ.


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