scholarly journals High doping efficiency in p-type Al-rich AlGaN by modifying the Mg doping planes

2020 ◽  
Vol 1 (1) ◽  
pp. 77-85 ◽  
Author(s):  
Xinjia Qiu ◽  
Yingda Chen ◽  
Enze Han ◽  
Zesheng Lv ◽  
Zhiyuan Song ◽  
...  
Keyword(s):  
Mg Doping ◽  
Deep Ultraviolet ◽  
P Type

High doping efficiency of the Mg dopant in Al-rich AlGaN is highly desired for AlGaN based deep ultraviolet optoelectronics.

Tunable electronic structures of p-type Mg doping in AlN nanosheet

2014 ◽  
Vol 116 (4) ◽  
pp. 044306 ◽  
Author(s):  
Yuting Peng ◽  
Congxin Xia ◽  
Heng Zhang ◽  
Tianxing Wang ◽  
Shuyi Wei ◽  
...  
Keyword(s):  
Electronic Structures ◽  
Mg Doping ◽  
P Type

scholarly journals Mn charge states in GaMnN as a function of Mn concentration and co-doping

2007 ◽  
Vol 1040 ◽  
Author(s):  
Enno Malguth ◽  
Axel Hoffmann ◽  
Wolfgang Gehlhoff ◽  
Matthew H. Kane ◽  
Ian T. Ferguson
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Magnetic Semiconductor ◽  
Electron Spin Resonance Spectroscopy ◽  
Resonance Spectroscopy ◽  
Mg Doping ◽  
Co Doping ◽  
Spin Resonance ◽  
P Type ◽  
Mn Concentration

AbstractIn the context of the pursuit of a dilute magnetic semiconductor for spintronic applications, a set of GaMnN samples with varying Mn concentration and Si or Mg co-doping was investigated by optical and electron spin resonance spectroscopy. The results clearly demonstrate how the charge state of Mn is changed between 2+, 3+ and 4+ by Mg and Si co-doping. For p-type GaMnN we show that the introduction of the Mn3+/4+ donor can be compensated by Mg co-doping lowering the Fermi energy below the Mn3+/4+ level. While our results are in agreement with the hypothesis that the infrared photoluminescence appearing in GaMnN upon Mg doping originates from Mn4+, an unambiguous proof is still to be presented. Under this assumption, our measurements show that the Mn4+ center must be excited via an extra-center process at 2.54 eV.

scholarly journals Deep-Ultraviolet (DUV)-Induced Doping in Single Channel Graphene for Pn-Junction

Nanomaterials ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 3003
Author(s):  
Asif Ali ◽  
So-Young Kim ◽  
Muhammad Hussain ◽  
Syed Hassan Abbas Jaffery ◽  
Ghulam Dastgeer ◽  
...  
Keyword(s):  
Single Channel ◽  
Field Effect Transistors ◽  
Single Layer ◽  
Charge Carrier Mobility ◽  
Radiation Environment ◽  
Pmma Layer ◽  
Laboratory Environment ◽  
Pn Junction ◽  
Deep Ultraviolet ◽  
P Type

The electronic properties of single-layer, CVD-grown graphene were modulated by deep ultraviolet (DUV) light irradiation in different radiation environments. The graphene field-effect transistors (GFETs), exposed to DUV in air and pure O2, exhibited p-type doping behavior, whereas those exposed in vacuum and pure N2 gas showed n-type doping. The degree of doping increased with DUV exposure time. However, n-type doping by DUV in vacuum reached saturation after 60 min of DUV irradiation. The p-type doping by DUV in air was observed to be quite stable over a long period in a laboratory environment and at higher temperatures, with little change in charge carrier mobility. The p-doping in pure O2 showed ~15% de-doping over 4 months. The n-type doping in pure N2 exhibited a high doping effect but was highly unstable over time in a laboratory environment, with very marked de-doping towards a pristine condition. A lateral pn-junction of graphene was successfully implemented by controlling the radiation environment of the DUV. First, graphene was doped to n-type by DUV in vacuum. Then the n-type graphene was converted to p-type by exposure again to DUV in air. The n-type region of the pn-junction was protected from DUV by a thick double-coated PMMA layer. The photocurrent response as a function of Vg was investigated to study possible applications in optoelectronics.

scholarly journals Regulation of Hole Concentration and Mobility and First-Principle Analysis of Mg-Doping in InGaN Grown by MOCVD

Materials ◽  
2021 ◽  
Vol 14 (18) ◽  
pp. 5339
Author(s):  
Lian Zhang ◽  
Rong Wang ◽  
Zhe Liu ◽  
Zhe Cheng ◽  
Xiaodong Tong ◽  
...  
Keyword(s):  
First Principles ◽  
Metalorganic Chemical Vapor Deposition ◽  
Hole Concentration ◽  
Chemical Vapor ◽  
Hole Mobility ◽  
Nitrogen Vacancy ◽  
First Principle ◽  
Mg Doping ◽  
Limiting Condition ◽  
P Type

This work studied the regulation of hole concentration and mobility in p-InGaN layers grown by metalorganic chemical vapor deposition (MOCVD) under an N-rich environment. By adjusting the growth temperature, the hole concentration can be controlled between 6 × 1017/cm3 and 3 × 1019/cm3 with adjustable hole mobility from 3 to 16 cm2/V.s. These p-InGaN layers can meet different requirements of devices for hole concentration and mobility. First-principles defect calculations indicate that the p-type doping of InGaN at the N-rich limiting condition mainly originated from Mg substituting In (MgIn). In contrast with the compensation of nitrogen vacancy in p-type InGaN grown in a Ga-rich environment, the holes in p-type InGaN grown in an N-rich environment were mainly compensated by interstitial Mg (Mgi), which has very low formation energy.

scholarly journals The Optoelectronic Properties of p-Type Cr-Deficient Cu[Cr0.95−xMg0.05]O2 Films Deposited by Reactive Magnetron Sputtering

Materials ◽  
2020 ◽  
Vol 13 (10) ◽  
pp. 2376 ◽  
Author(s):  
Song-Sheng Lin ◽  
Qian Shi ◽  
Ming-Jiang Dai ◽  
Kun-Lun Wang ◽  
Sheng-Chi Chen ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Carrier Mobility ◽  
Figure Of Merit ◽  
Incident Light ◽  
Transparent Conductive Oxide ◽  
Optoelectronic Properties ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Mg Doping ◽  
P Type

CuCrO2 is one of the most promising p-type transparent conductive oxide (TCO) materials. Its electrical properties can be considerably improved by Mg doping. In this work, Cr-deficient CuCrO2 thin films were deposited by reactive magnetron sputtering based on 5 at.% Mg doping. The influence of Cr deficiency on the film’s optoelectronic properties was investigated. As the film’s composition varied, CuO impurity phases appeared in the film. The mixed valency of Cu+/Cu2+ led to an enhancement of the hybridization between the Cu3d and O2p orbitals, which further reduced the localization of the holes by oxygen. As a result, the carrier concentration significantly improved. However, since the impurity phase of CuO introduced more grain boundaries in Cu[Cr0.95−xMg0.05]O2, impeding the transport of the carrier and incident light in the film, the carrier mobility and the film’s transmittance reduced accordingly. In this work, the optimal optoelectronic performance is realized where the film’s composition is Cu[Cr0.78Mg0.05]O2. Its Haacke’s figure of merit is about 1.23 × 10−7 Ω−1.

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