Synthesis of renewable C–C cyclic compounds and high-density biofuels using 5-hydromethylfurfural as a reactant

2020 ◽  
Vol 22 (8) ◽  
pp. 2468-2473 ◽  
Author(s):  
Taimei Cai ◽  
Qiang Deng ◽  
Hailong Peng ◽  
Jin Zhong ◽  
Rui Gao ◽  
...  

Renewable C–C six-membered ring compound and high-density biofuel are synthesized using 5-hydromethylfurfural as a reactant.

1990 ◽  
Vol 45 (9) ◽  
pp. 1282-1290 ◽  
Author(s):  
Ralf Steudel ◽  
Eva-Maria Strauss ◽  
Detlef Jensen

The HPLC retention times of 25 cyclic compounds of type SexSy, (x = 0 · · · 8; y = 0 · · · 12) have been measured under identical conditions and are used to evaluate the factors which determine the retention. Linear relationships are derived for the dependence of retention (Ink'; k′ = capacity factor) on ring size, number of Se atoms, and number of SeS bonds per molecule for six-, seven-, eight-, and twelve-membered SexSy rings. These relationships allow the prediction of retention times for all SexSy heterocycles of these ring sizes (ca. 100 compounds). The results are applied to the qualitative analysis of mixed sulfur-selenium melts of two compositions: at a molar ratio of S : Se = 8.7 twenty-one HPLC signals have been observed for the CS2 extract of the quenched melt and assigned to SexSy rings of sizes 6··· 12. At S : Se = 0.33 mainly six-, seven-, and eight-membered species with cumulated Se atoms have been found.


2021 ◽  
Vol 899 ◽  
pp. 606-612
Author(s):  
Abubekir Kh. Shaov ◽  
Asya N. Beslaneeva ◽  
Gennady B. Shustov ◽  
Albina M. Altueva

High molecular weight compounds with organophosphorus backbones are usually obtained by polycondensation of phosphorus-containing monomers, leading, most often, to products of low molecular weight at low yields. This fact is explained [1] by several reasons: a decrease in the reactivity of the second functional group of the monomer after the first one has reacted; the possibility of the formation of cyclic compounds; hydrolytic instability of the phosphorus-heteroatom bond (usually P-O, P-N), etc.


1978 ◽  
Vol 33 (7) ◽  
pp. 759-762 ◽  
Author(s):  
Herbert W. Roesky ◽  
Klaus Ambrosius

AbstractSeveral routes were investigated for the preparation of 3-CF3C6H4N[Si(CH3)3]2 2 and 3-CF3C6H4N[Sn(CH3)3]2 3. The latter compound reacts with 3-CF3C6H4NCO to yield [3-CF3C6H4(CH3)3SnN]2CO 4. A substituted urea 5 is also formed from [(CH3)3Si]2NCH3 and 3-CF3C6H4NCO. 5 is used for the preparation of cyclic compounds, with S2Cl2 the ten-membered ring (3-CF3C6H4NCONCH3S2)2 6 is formed. 5 and HN(SO2Cl)2 yield the six-membered ring 3-CF3C6H4NCONCH3(SO2)2NH 7. SeOCl2 and 5 react under formation of a spiro compound (S-CF3C6H4NCONCH3)2Se 8. The compounds were characterized on the basis of mass and 19F NMR spectra.


1984 ◽  
Vol 62 (11) ◽  
pp. 2395-2398 ◽  
Author(s):  
Pierre Deslongchamps ◽  
Serge Lamothe ◽  
Ho-Shen Lin

The malonate anion displacement of allylic chloride in a ten-carbon aliphatic chain containing one additional unsaturation center yields 10-membered cyclic compounds.


Author(s):  
S. McKernan ◽  
C. B. Carter ◽  
D. Bour ◽  
J. R. Shealy

The growth of ternary III-V semiconductors by organo-metallic vapor phase epitaxy (OMVPE) is widely practiced. It has been generally assumed that the resulting structure is the same as that of the corresponding binary semiconductors, but with the two different cation or anion species randomly distributed on their appropriate sublattice sites. Recently several different ternary semiconductors including AlxGa1-xAs, Gaxln-1-xAs and Gaxln1-xP1-6 have been observed in ordered states. A common feature of these ordered compounds is that they contain a relatively high density of defects. This is evident in electron diffraction patterns from these materials where streaks, which are typically parallel to the growth direction, are associated with the extra reflections arising from the ordering. However, where the (Ga,ln)P epilayer is reasonably well ordered the streaking is extremely faint, and the intensity of the ordered spot at 1/2(111) is much greater than that at 1/2(111). In these cases it is possible to image relatively clearly many of the defects found in the ordered structure.


Author(s):  
L. Mulestagno ◽  
J.C. Holzer ◽  
P. Fraundorf

Due to the wealth of information, both analytical and structural that can be obtained from it TEM always has been a favorite tool for the analysis of process-induced defects in semiconductor wafers. The only major disadvantage has always been, that the volume under study in the TEM is relatively small, making it difficult to locate low density defects, and sample preparation is a somewhat lengthy procedure. This problem has been somewhat alleviated by the availability of efficient low angle milling.Using a PIPS® variable angle ion -mill, manufactured by Gatan, we have been consistently obtaining planar specimens with a high quality thin area in excess of 5 × 104 μm2 in about half an hour (milling time), which has made it possible to locate defects at lower densities, or, for defects of relatively high density, obtain information which is statistically more significant (table 1).


Author(s):  
Evelyn R. Ackerman ◽  
Gary D. Burnett

Advancements in state of the art high density Head/Disk retrieval systems has increased the demand for sophisticated failure analysis methods. From 1968 to 1974 the emphasis was on the number of tracks per inch. (TPI) ranging from 100 to 400 as summarized in Table 1. This emphasis shifted with the increase in densities to include the number of bits per inch (BPI). A bit is formed by magnetizing the Fe203 particles of the media in one direction and allowing magnetic heads to recognize specific data patterns. From 1977 to 1986 the tracks per inch increased from 470 to 1400 corresponding to an increase from 6300 to 10,800 bits per inch respectively. Due to the reduction in the bit and track sizes, build and operating environments of systems have become critical factors in media reliability.Using the Ferrofluid pattern developing technique, the scanning electron microscope can be a valuable diagnostic tool in the examination of failure sites on disks.


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