Surface-state-induced upward band bending in P doped g-C3N4 for the formation of an isotype heterojunction between bulk g-C3N4 and P doped g-C3N4: photocatalytic hydrogen production

2020 ◽  
Vol 10 (23) ◽  
pp. 8015-8025
Author(s):  
Nithya Thangavel ◽  
Kavitha Pandi ◽  
A. R. Mahammed Shaheer ◽  
Bernaurdshaw Neppolian

The staggered type heterojunction with g-C3N4 based nanomaterials has received much attention owing to its change in chemical potential between two semiconductors.

2021 ◽  
Vol 874 ◽  
pp. 159930
Author(s):  
Jiangfan Sun ◽  
Mingcai Yin ◽  
Yixian Li ◽  
Kaiyue Liang ◽  
Yaoting Fan ◽  
...  

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