Surface-state-induced upward band bending in P doped g-C3N4 for the formation of an isotype heterojunction between bulk g-C3N4 and P doped g-C3N4: photocatalytic hydrogen production
Keyword(s):
The staggered type heterojunction with g-C3N4 based nanomaterials has received much attention owing to its change in chemical potential between two semiconductors.