Differential hysteresis scanning of non-templated monomodal amorphous aerogels

2021 ◽  
Vol 23 (9) ◽  
pp. 5422-5430 ◽  
Author(s):  
Poroshat Taheri ◽  
John C. Lang ◽  
Jeffrey Kenvin ◽  
Peter Kroll
Keyword(s):  
Porous Materials ◽  
Amorphous Silicon ◽  
Silicon Oxycarbide ◽  
Hierarchical Connectivity

We perform Differential Hysteresis Scanning (DHS) Porosimetry of amorphous silicon oxycarbide aerogels to quantify hierarchical connectivity in these porous materials.

scholarly journals Radiation Tolerance in Nano-Structured Crystalline Fe(Cr)/Amorphous SiOC Composite

Crystals ◽  
2019 ◽  
Vol 9 (3) ◽  
pp. 147
Author(s):  
Qing Su ◽  
Tianyao Wang ◽  
Lin Shao ◽  
Michael Nastasi
Keyword(s):  
Amorphous Silicon ◽  
Grain Growth ◽  
Irradiation Dose ◽  
Room Temperature ◽  
Silicon Oxycarbide ◽  
Radiation Response ◽  
Radiation Tolerance ◽  
Width Direction ◽  
Cr Film ◽  
Radiation Tolerant

The management of irradiation defects is one of key challenges for structural materials in current and future reactor systems. To develop radiation tolerant alloys for service in extreme irradiation environments, the Fe self-ion radiation response of nanocomposites composed of amorphous silicon oxycarbide (SiOC) and crystalline Fe(Cr) were examined at 10, 20, and 50 displacements per atom damage levels. Grain growth in width direction was observed to increase with increasing irradiation dose in both Fe(Cr) films and Fe(Cr) layers in the nanocomposite after irradiation at room temperature. However, compared to the Fe(Cr) film, the Fe(Cr) layers in the nanocomposite exhibited ~50% less grain growth at the same damage levels, suggesting that interfaces in the nanocomposite were defect sinks. Moreover, the addition of Cr to α-Fe was shown to suppress its grain growth under irradiation for both the composite and non-composite case, consistent with earlier molecular dynamic (MD) modeling studies.

scholarly journals Helium Irradiation and Implantation Effects on the Structure of Amorphous Silicon Oxycarbide

2017 ◽  
Vol 7 (1) ◽  
Author(s):  
Qing Su ◽  
Shinsuke Inoue ◽  
Manabu Ishimaru ◽  
Jonathan Gigax ◽  
Tianyao Wang ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Silicon Oxycarbide

On the effects of thermal treatment on the composition, structure, morphology, and optical properties of hydrogenated amorphous silicon-oxycarbide

2009 ◽  
Vol 24 (8) ◽  
pp. 2561-2573 ◽  
Author(s):  
Spyros Gallis ◽  
Vasileios Nikas ◽  
Eric Eisenbraun ◽  
Mengbing Huang ◽  
Alain E. Kaloyeros
Keyword(s):  
Optical Properties ◽  
Thermal Treatment ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Effective Cross Section ◽  
Silicon Oxycarbide ◽  
Nuclear Reaction Analysis ◽  
Structure Morphology ◽  
Composition Structure ◽  
Hydrogenated Amorphous

The composition, structure, morphology, and optical characteristics of hydrogenated amorphous silicon-oxycarbide (a-SiCxOyHz) materials were investigated as a function of experimental processing conditions and post-deposition thermal treatment. Thermal chemical vapor deposition (TCVD) was applied to the growth of three different types of a-SiCxOyHz films, namely, SiC-like (SiC1.08O0.07H0.21), Si-C-O (SiC0.50O1.20H0.22), and SiO2-like (SiC0.20O1.70H0.24). The resulting films were subsequently annealed at temperatures ranging from 500 °C to 1100 °C for 1 h in an argon atmosphere. The composition, structure, and morphology of as-deposited and post-annealed films were characterized by Fourier transform infrared spectroscopy (FTIR), x-ray photoelectron spectroscopy (XPS), Rutherford backscattering spectroscopy (RBS), nuclear-reaction analysis (NRA), and scanning electron microscopy. Corresponding optical properties were assessed by spectroscopic ultraviolet-visible ellipsometry (UV-VIS-SE). These studies led to the identification of an optimized process window for the growth of Er doped silicon oxycarbide (SiC0.5O1.0:Er) thin film with strong room-temperature photoluminescence emission measured around 1540 nm within a broad (460 nm to 600 nm) wavelength band. Associated modeling studies showed that the effective cross section for Er excitation in the SiC0.5O1.0:Er matrix was approximately four orders of magnitude larger than its analog for direct optical excitation of Er ions.

Radial Distribution Function of Amorphous Silicon Oxycarbide Compounds

2000 ◽  
Vol 343-346 ◽  
pp. 677-682 ◽  
Author(s):  
H. Brequel ◽  
G.D. Sorarù ◽  
Liliana Schiffini ◽  
Stefano Enzo
Keyword(s):  
Distribution Function ◽  
Amorphous Silicon ◽  
Radial Distribution Function ◽  
Radial Distribution ◽  
Silicon Oxycarbide

Strong photoluminescence at 1540 nm from Er-doped amorphous silicon oxycarbide: a novel silicon material for photonic applications

2008 ◽  
Author(s):  
Spyros Gallis ◽  
Vasileios Nikas ◽  
Himani Suhag ◽  
Mengbing Huang ◽  
Alain E. Kaloyeros
Keyword(s):  
Amorphous Silicon ◽  
Silicon Oxycarbide ◽  
Silicon Material ◽  
Er Doped

Intense blue-white luminescence from amorphous silicon oxycarbide (a-SiC x O y ) thin films

2011 ◽  
Author(s):  
Vasileios Nikas ◽  
Spyros Gallis ◽  
Himani Suhag ◽  
Mengbing Huang ◽  
Alain E. Kaloyeros
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Silicon Oxycarbide ◽  
White Luminescence
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