The grain boundary effect on mechanical and electronic transport properties of a striped borophene

2020 ◽  
Vol 22 (38) ◽  
pp. 21844-21850
Author(s):  
Jie Sun ◽  
Jiancai Leng ◽  
Guangping Zhang
Keyword(s):  
Grain Boundary ◽  
Transport Properties ◽  
Electronic Transport ◽  
Boundary Effect ◽  
Transport Current ◽  
Electronic Transport Properties ◽  
Grain Boundary Effect

The presence of GBs suppress the transport current.

Grain boundary effect on the β-boron electrical transport properties at high pressure

2010 ◽  
Vol 97 (17) ◽  
pp. 174101 ◽  
Author(s):  
Ming Li ◽  
Jie Yang ◽  
Karim Snoussi ◽  
Lixin Li ◽  
Huixin Wang ◽  
...  
Keyword(s):  
High Pressure ◽  
Grain Boundary ◽  
Transport Properties ◽  
Electrical Transport ◽  
Boundary Effect ◽  
Electrical Transport Properties ◽  
Grain Boundary Effect

Grain Boundary Effect on Electrical Transport Properties of Graphene

2014 ◽  
Vol 118 (5) ◽  
pp. 2338-2343 ◽  
Author(s):  
Hengji Zhang ◽  
Geunsik Lee ◽  
Cheng Gong ◽  
Luigi Colombo ◽  
Kyeongjae Cho
Keyword(s):  
Grain Boundary ◽  
Transport Properties ◽  
Electrical Transport ◽  
Boundary Effect ◽  
Electrical Transport Properties ◽  
Grain Boundary Effect

Electrical transport properties of AlAs under compression: reversible boundary effect

2015 ◽  
Vol 17 (39) ◽  
pp. 26277-26282 ◽  
Author(s):  
Jiejuan Yan ◽  
Feng Ke ◽  
Cailong Liu ◽  
Qinglin Wang ◽  
Junkai Zhang ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Transport Properties ◽  
Electrical Transport ◽  
Boundary Effect ◽  
Electrical Transport Properties ◽  
Grain Boundary Effect ◽  
Resistance Difference

The grain boundary effect can be modulated by compression and plays positive roles on performance of devices such as increasing the resistance difference between two states.

ELECTRONIC TRANSPORT PROPERTIES OF SILICON NANOWIRE CAGE

2018 ◽  
Author(s):  
Shenqiu Mo ◽  
Dengke Ma ◽  
Lina Yang ◽  
Meng An ◽  
Zhiyu Liu ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electronic Transport ◽  
Silicon Nanowire ◽  
Electronic Transport Properties

Improved thermoelectric transport properties of Ge4Se3Te through dimensionality reduction

2021 ◽  
Author(s):  
H. H. Huang ◽  
Xiaofeng Fan ◽  
Wei Tao Zheng ◽  
David J. Singh
Keyword(s):  
Dimensionality Reduction ◽  
Transport Properties ◽  
Electronic Transport ◽  
Thermoelectric Transport ◽  
Electronic Transport Properties ◽  
Thermoelectric Transport Properties

Layered semiconducting Ge4Se3Te shows unusual bonding that suggests the possibility of unusual transport that may be favorable for thermoelectrics. We investigated the electronic transport properties in relation to thermoelectricity of...

scholarly journals Effect of vacancy defects on the electronic transport properties of an Ag–ZnO–Pt sandwich structure

2021 ◽  
Vol 20 (2) ◽  
pp. 798-804
Author(s):  
G. R. Berdiyorov ◽  
F. Boltayev ◽  
G. Eshonqulov ◽  
H. Hamoudi
Keyword(s):  
Transport Properties ◽  
Electronic Transport ◽  
Density Functional ◽  
Practical Importance ◽  
Functional Formalism ◽  
Vacancy Defects ◽  
Electronic Transport Properties ◽  
Charge Localization ◽  
Metal Insulator Metal ◽  
Current Rectification

AbstractThe effect of zinc and oxygen vacancy defects on the electronic transport properties of Ag(100)–ZnO(100)–Pt(100) sandwich structures is studied using density functional theory in combination with the nonequilibrium Green’s functional formalism. Defect-free systems show clear current rectification due to voltage dependent charge localization in the system as revealed in our transmission eigenstates analysis. Regardless of the location, oxygen vacancies result in enhanced current in the system, whereas Zn vacancy defects reduce the charge transport across the junction. The current rectification becomes less pronounced in the presence of both types of vacancy defects. Our findings can be of practical importance for developing metal-insulator-metal diodes.

Sign in / Sign up

Export Citation Format

Share Document