Modulation of the adsorption chemistry of a precursor in atomic layer deposition to enhance the growth per cycle of a TiO2 thin film

Author(s):  
Yeonchoo Cho ◽  
Sang Hyeon Kim ◽  
Byung Seok Kim ◽  
Youngjin Kim ◽  
Woojin Jeon

This study investigates the chemical reaction mechanism of the ALD to obtain a designated growth behaviour in theoretical and experimental way, hence, provides significant implications for understanding the ALD mechanism based on the DFT calculation.

RSC Advances ◽  
2015 ◽  
Vol 5 (17) ◽  
pp. 12824-12829 ◽  
Author(s):  
Lulu Ma ◽  
Dongqing Pan ◽  
Yuanyuan Xie ◽  
Chris Yuan

The ALD process emissions and the associated chemical reaction mechanism inside the ALD of Al2O3 system are studied and reported.


2014 ◽  
Vol 6 (15) ◽  
pp. 11817-11822 ◽  
Author(s):  
Dai-Hong Kim ◽  
Won-Sik Kim ◽  
Sungtae Kim ◽  
Seong-Hyeon Hong

2018 ◽  
Vol 13 (11) ◽  
pp. 1701-1704 ◽  
Author(s):  
Syed Mansoor Ali ◽  
M. S. Al Garawi ◽  
S. S. Al-Ghamdi ◽  
Muhammad Hammad Aziz ◽  
Turki S. Alkhuraiji ◽  
...  

RSC Advances ◽  
2018 ◽  
Vol 8 (68) ◽  
pp. 39039-39046 ◽  
Author(s):  
Hwanyeol Park ◽  
Sungwoo Lee ◽  
Ho Jun Kim ◽  
Daekwang Woo ◽  
Jong Myeong Lee ◽  
...  

We investigated the overall ALD reaction mechanism for W deposition on TiN surfaces based on DFT calculation as well as the detailed dissociative reactions of WF6.


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