Entropic stabilization plays a key role in the non-uniform distribution of oxygen ions and vacancy defects in gadolinium-doped ceria

2021 ◽  
Author(s):  
Methary Jaipal ◽  
Bharathi Bandi ◽  
Abhijit Chatterjee
Keyword(s):  
Uniform Distribution ◽  
Doped Ceria ◽  
Vacancy Defects ◽  
Oxygen Ions ◽  
Oxygen Ion ◽  
Ion Movement ◽  
Entropic Stabilization ◽  
Entropic Effects ◽  
Gadolinium Doped Ceria

A new theory describing oxygen ion movement and distribution in YSZ and GDC shows that entropic effects are significant.

scholarly journals Diffusion in gadolinium doped ceria thin films: a combined Monte Carlo and molecular dynamics study

2019 ◽  
Vol 21 (19) ◽  
pp. 9802-9809
Author(s):  
John A. Purton
Keyword(s):  
Thin Films ◽  
Molecular Dynamics ◽  
Monte Carlo ◽  
Solid Oxide ◽  
Atomistic Simulations ◽  
Doped Ceria ◽  
Oxide Fuel ◽  
Oxygen Ions ◽  
Surfaces And Interfaces ◽  
Gadolinium Doped Ceria

The mobility of oxygen ions at surfaces and interfaces in solid oxide fuel materials are examined using atomistic simulations.

An overview of thermotransport in fluorite-related ionic oxides

2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Leila Momenzadeh ◽  
Steffen Grieshammer ◽  
Irina V. Belova ◽  
Graeme E. Murch
Keyword(s):  
Heat Transport ◽  
Reasonable Agreement ◽  
Doped Ceria ◽  
Close Coupling ◽  
Practical Applications ◽  
Oxygen Ions ◽  
Oxygen Ion ◽  
Molecular Dynamics Calculations ◽  
Simulation Results ◽  
Fast Ion

Abstract In this overview, we summarize the phenomenon of thermotransport (the close coupling of mass transport and heat transport) in two fast ion conductors: yttria-doped zirconia and gadolinia-doped ceria. We focus on two recent molecular dynamics calculations using the Green-Kubo formalism. We show that the Onsager thermotransport cross coefficient (mass-heat coupling) is negative, meaning that oxygen ions would drift, in principle, to the hot side in a temperature gradient. Simulation results presented in this overview show reasonable agreement with available experimental data for thermal conductivity. Results of this study suggest that the coupling between mass and heat transport in oxygen ion electrolytes could have significant effect for practical applications.

scholarly journals Development of a processing map for safe flash sintering of Gadolinium‐doped Ceria

2021 ◽  
Author(s):  
Tarini Prasad Mishra ◽  
Christian Lenser ◽  
Rishi Raj ◽  
Olivier Guillon ◽  
Martin Bram
Keyword(s):  
Processing Map ◽  
Doped Ceria ◽  
Flash Sintering ◽  
Gadolinium Doped Ceria

Gadolinium doped ceria nanostructured oxide for intermediate temperature solid oxide fuel cells

2021 ◽  
pp. 160444
Author(s):  
S.U. Costilla-Aguilar ◽  
M.I. Pech-Canul ◽  
M.J. Escudero ◽  
R.F. Cienfuegos-Pelaes ◽  
J.A. Aguilar-Martínez
Keyword(s):  
Fuel Cells ◽  
Solid Oxide Fuel Cells ◽  
Solid Oxide ◽  
Intermediate Temperature ◽  
Doped Ceria ◽  
Oxide Fuel ◽  
Nanostructured Oxide ◽  
Gadolinium Doped Ceria

Doped Ceria Based Solid Oxide Fuel Cell Electrolytes and their Sintering Aspects: An Overview

2016 ◽  
Vol 835 ◽  
pp. 199-236 ◽  
Author(s):  
Pradyot Datta
Keyword(s):  
Power Generation ◽  
Fuel Cell ◽  
Solid Oxide Fuel Cell ◽  
Operating Temperature ◽  
Solid Oxide ◽  
Ion Conductivity ◽  
Doped Ceria ◽  
Oxide Fuel ◽  
Oxygen Ion Conductivity ◽  
Oxygen Ion

Depletion of fossil fuel at an alarming rate is a major concern of humankind. Consequently, researchers all over the world are putting a concerted effort for finding alternative and renewable energy. Solid oxide fuel cell (SOFC) is one such system. SOFCs are electrochemical devices that have several advantages over conventional power generation systems like high efficiency of power generation, low emission of green house gases and the fuel flexibility. The major research focus of recent times is to reduce the operating temperature of SOFC in the range of 500 to 700 °C so as to render it commercially viable. This reduction in temperature is largely dependent on finding an electrolyte material with adequate oxygen ion conductivity at the intended operating temperature. One much material is Gadolinia doped Ceria (CGO) that shows very good oxygen ion conductivity at the intended operation temperature. The aim of this overview is to highlight the contribution that materials chemistry has made to the development of CGO as an electrolyte.

scholarly journals Kinetic Analysis of the Effect of Poliovirus Receptor on Viral Uncoating: the Receptor as a Catalyst

2001 ◽  
Vol 75 (11) ◽  
pp. 4984-4989 ◽  
Author(s):  
Simon K. Tsang ◽  
Brian M. McDermott ◽  
Vincent R. Racaniello ◽  
James M. Hogle
Keyword(s):  
Activation Energy ◽  
Transition State ◽  
Kinetic Analysis ◽  
Transition State Theory ◽  
State Theory ◽  
Viral Receptor ◽  
Poliovirus Receptor ◽  
Entropic Stabilization ◽  
Entropic Effects

ABSTRACT We examined the role of soluble poliovirus receptor on the transition of native poliovirus (160S or N particle) to an infectious intermediate (135S or A particle). The viral receptor behaves as a classic transition state theory catalyst, facilitating the N-to-A conversion by lowering the activation energy for the process by 50 kcal/mol. In contrast to earlier studies which demonstrated that capsid-binding drugs inhibit thermally mediated N-to-A conversion through entropic stabilization alone, capsid-binding drugs are shown to inhibit receptor-mediated N-to-A conversion through a combination of enthalpic and entropic effects.

Defect Engineering for SIMOX Processing

2007 ◽  
Vol 131-133 ◽  
pp. 339-344 ◽  
Author(s):  
Reinhard Kögler ◽  
A. Mücklich ◽  
W. Anwand ◽  
F. Eichhorn ◽  
Wolfgang Skorupa
Keyword(s):  
Silicon On Insulator ◽  
Oxide Growth ◽  
Defect Engineering ◽  
Promising Technique ◽  
Crucial Point ◽  
Vacancy Defects ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation ◽  
Very High ◽  
Established Technique

SIMOX (Separation-by-Implantation-of-Oxygen) is an established technique to fabricate silicon-on-insulator (SOI) structures by oxygen ion implantation into silicon. The main problem of SIMOX is the very high oxygen ion fluence and the related defects. It is demonstrated that vacancy defects promote and localize the oxide growth. The crucial point is to control the distribution of vacancies. Oxygen implantation generates excess vacancies around RP/2 which act as trapping sites for oxide growth outside the region at the maximum concentration of oxygen at RP. The introduction of a narrow cavity layer by He implantation and subsequent annealing is shown to be a promising technique of defect engineering. The additional He implant does not initiate oxide growth in the top-Si layer of SOI.

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