scholarly journals Tailoring the protonic conductivity of porous yttria-stabilized zirconia thin films by surface modification

2020 ◽  
Vol 22 (20) ◽  
pp. 11519-11528 ◽  
Author(s):  
Erdogan Celik ◽  
Rajendra S. Negi ◽  
Michele Bastianello ◽  
Dominic Boll ◽  
Andrey Mazilkin ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Modification ◽  
Specific Surface ◽  
Transport Properties ◽  
Surface Area ◽  
Pulsed Laser ◽  
Yttria Stabilized Zirconia ◽  
Laser Deposition ◽  
Protonic Conductivity ◽  
Stabilized Zirconia

Porous yttria-stabilized zirconia (YSZ) thin films were prepared by pulsed laser deposition to investigate the influence of specific surface area on the electrical and protonic transport properties.

Crystallization and grain growth characteristics of yttria-stabilized zirconia thin films grown by pulsed laser deposition

2011 ◽  
Vol 191 (1) ◽  
pp. 12-23 ◽  
Author(s):  
Sebastian Heiroth ◽  
Ruggero Frison ◽  
Jennifer L.M. Rupp ◽  
Thomas Lippert ◽  
Eszter J. Barthazy Meier ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Grain Growth ◽  
Pulsed Laser ◽  
Growth Characteristics ◽  
Yttria Stabilized Zirconia ◽  
Laser Deposition ◽  
Stabilized Zirconia

High Electron Mobility W-doped In2O3 Thin Films

2005 ◽  
Vol 905 ◽  
Author(s):  
Paul F. Newhouse ◽  
Cheol-Hee Park ◽  
Douglas A. Keszler ◽  
Janet Tate ◽  
Peter S. Nyholm
Keyword(s):  
Thin Films ◽  
Electron Mobility ◽  
Room Temperature ◽  
Dopant Concentration ◽  
Pulsed Laser ◽  
Yttria Stabilized Zirconia ◽  
Laser Deposition ◽  
High Electron ◽  
Stabilized Zirconia ◽  
High Electron Mobility

AbstractHigh electron mobility thin films of In2−xWxO3+d (0 ≤ × ≤ 0.075) were prepared by pulsed laser deposition. The highest mobility polycrystalline and textured films show mobility >110 cm2/Vs on both amorphous SiO2 and single crystal yttria-stabilized zirconia substrates. The carrier density is in the range 1−3 × 1020 cm−3 at room temperature. The W dopant concentration for films with optimized electrical properties was x ∼ 0.03.

Structural Properties of Yttria-stabilized Zirconia Thin Films Grown by Pulsed Laser Deposition

1999 ◽  
Vol 14 (4) ◽  
pp. 1329-1336 ◽  
Author(s):  
J. Y. Dai ◽  
H. C. Ong ◽  
R. P. H. Chang
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Pulsed Laser ◽  
Growth Direction ◽  
Yttria Stabilized Zirconia ◽  
Laser Deposition ◽  
Low Oxygen ◽  
Stabilized Zirconia

Yttria-stabilized zirconia (YSZ) thin films grown by the pulsed laser deposition method on (0001) sapphire substrates have been studied by x-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), and scanning electron microscopy (SEM). It was found that the crystal orientation of the YSZ films changes as a function of oxygen pressure during deposition. At low oxygen pressure (50 mTorr), well-defined (111) oriented YSZ films are grown. High oxygen pressure favors the nucleation of (001) oriented YSZ grains. A model to explain the preferred growth direction of (001) YSZ is presented. Utilizing the experimental data, we have developed a two-step process to epitaxially grow high-quality (001) oriented YSZ on (0001) sapphire substrate.

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