Negative differential resistance effect in resistive switching devices based on h-LuFeO3/CoFe2O4 heterojunctions

2020 ◽  
Vol 22 (10) ◽  
pp. 5819-5825 ◽  
Author(s):  
Xinxin Ran ◽  
Pengfei Hou ◽  
Jiaxun Song ◽  
Hongjia Song ◽  
Xiangli Zhong ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Good Reproducibility ◽  
Interfacial Defect ◽  
Negative Differential Resistance Effect ◽  
Switching Devices

The polarization and interfacial defect modulated NDR effect shows good reproducibility for hundreds of cycles in h-LuFeO3/CoFe2O4 heterojunction-based RS devices.

Bipolar resistive switching with negative differential resistance effect in a Cu/BaTiO3/Ag device

2017 ◽  
Vol 19 (19) ◽  
pp. 11864-11868 ◽  
Author(s):  
L. J. Wei ◽  
Y. Yuan ◽  
J. Wang ◽  
H. Q. Tu ◽  
Y. Gao ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Resistive Switching ◽  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Si Substrate ◽  
Bipolar Resistive Switching ◽  
Switching Behaviour ◽  
Negative Differential Resistance Effect

We demonstrate that a bipolar non-volatile resistive switching behaviour with negative differential resistance (NDR) effect is realized in a Cu/BaTiO3/Ag device, which was deposited on a Si substrate via magnetron sputtering equipment.

Photo-induced negative differential resistance and carrier-transport mechanisms in Bi2FeCrO6 resistive switching memory devices

2021 ◽  
Vol 9 (39) ◽  
pp. 13755-13760
Author(s):  
Songcheng Hu ◽  
Zhenhua Tang ◽  
Li Zhang ◽  
Dijie Yao ◽  
Zhigang Liu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Negative Differential Resistance ◽  
Carrier Transport ◽  
Electronic Devices ◽  
Differential Resistance ◽  
Memory Devices ◽  
Transport Mechanisms ◽  
Resistive Switching Memory ◽  
Potential Applications ◽  
Switching Memory

The new effects induced by light in materials have important potential applications in optoelectronic multifunctional electronic devices.

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