Effect of crucible rotation on the temperature and oxygen distributions in Czochralski grown silicon for photovoltaic applications

CrystEngComm ◽  
2021 ◽  
Author(s):  
Alexandra Popescu ◽  
Martin P. Bellmann ◽  
Daniel Vizman
Keyword(s):  
Oxygen Concentration ◽  
Rotation Rate ◽  
Silicon Crystals ◽  
Photovoltaic Applications ◽  
Crucible Rotation

Oxygen concentration is sensitive to changes in the rotation rate for Czochralski grown silicon crystals.

Effect of the pulling, crystal and crucible rotation rate on the thermal stress and the melt–crystal interface in the Czochralski growth of germanium crystals

CrystEngComm ◽  
2021 ◽  
Vol 23 (39) ◽  
pp. 6967-6976
Author(s):  
Mahboobeh Saadatirad ◽  
Mohammad Hossein Tavakoli ◽  
Hossein Khodamoradi ◽  
Seyedeh Razieh Masharian
Keyword(s):  
Thermal Stress ◽  
Rotation Rate ◽  
Czochralski Growth ◽  
Interface Shape ◽  
Crucible Rotation ◽  
Crystal Interface

The effect of the pulling rate on the melt–crystal interface shape and melt streamline is investigated.

Control of Oxygen Content in Heavily Sb-Doped CZ Si Crystal by Adjusting Ambient Pressure

1995 ◽  
Vol 378 ◽  
Author(s):  
Koji Izunome ◽  
Xinming Huang ◽  
Shiniji Togawa ◽  
Kazutaka Terashima ◽  
Shigeyuki Kimura
Keyword(s):  
Single Crystals ◽  
Gas Phase ◽  
Oxygen Concentration ◽  
Evaporation Rate ◽  
Ambient Pressure ◽  
Silicon Crystals ◽  
Silicon Melt ◽  
Sb Doping ◽  
Gas Phase Transport ◽  
Phase Transport

AbstractIn Czochralski-grown (CZ) silicon single crystals, antimony (Sb) doping decreases the oxygen concentration by enhancing oxygen evaporation from the melt surface. In this study, Ar ambient pressures of around 100 Torr over the silicon melt were found to suppress evaporation of oxide species. To clarify the effect of the growth chamber ambient pressure on oxygen concentration, heavily Sb-doped CZ silicon crystals were grown under Ar pressures of 30, 60, and 100 Torr. Increasing Ar pressure increases the oxygen and Sb concentrations at the melt surface. The oxygen concentration under an Ar pressure of 100 Torr was 1.2 times higher that under 30 Torr when the solidified fractions are 0.5 or larger. The oxygen evaporation rate is controllable by gas phase transport of Sb2O at high Ar pressures.

scholarly journals Numerical Simulation of Thermal-Solutal Capillary-Buoyancy Flow of Ge1–xSix Single Crystals Driven by Surface-Tension and Rotation in a Czochralski Configuration

Crystals ◽  
2019 ◽  
Vol 9 (4) ◽  
pp. 217 ◽  
Author(s):  
Jia-Jia Yu ◽  
Lu Zhang ◽  
Ting Shen ◽  
Li Zhang ◽  
You-Rong Li
Keyword(s):  
Reynolds Number ◽  
Traveling Waves ◽  
Rotation Rate ◽  
Three Dimensional ◽  
Maximum Amplitude ◽  
Reynolds Numbers ◽  
Solute Concentration ◽  
Buoyancy Flow ◽  
Constant Rate ◽  
Crucible Rotation

A series of three-dimensional numerical simulations were performed to understand the thermal-solutal capillary-buoyancy flow of Ge1-xSix melts during Czochralski crystal growth with a rotating crystal or crucible. The crystal and crucible rotation Reynolds numbers in this work are 0∼3.5 × 103 (0∼4.4 rpm) and 0∼−2.4 × 103 (0∼−1.5 rpm), respectively. Simulation results show that if the thermal capillary Reynolds number is relatively low, the flow will be steady and axisymmetric, even though the crystal or crucible rotates at a constant rate. The critical thermal capillary Reynolds number for the initiation of the three-dimensional oscillatory flow is larger than that of pure fluids. As the crystal or crucible rotation rate increases, the critical thermal capillary Reynolds number first increases and then decreases. The dominant flow pattern after the flow destabilization is azimuthal traveling waves. Furthermore, a reversed evolution from the oscillatory spoke pattern to traveling waves appears in the melt. Once the crystal or crucible rotation rate is relatively large, the traveling waves respectively evolve to rotating waves at the crystal rotation and a spindle-like pattern at the crucible rotation. In addition, the maximum amplitude of solute concentration oscillation on the free surface initially decreases, but finally rises with the crystal or crucible rotation rate increasing.

scholarly journals Relationship between Dislocation Density and Oxygen Concentration in Silicon Crystals during Directional Solidification

Crystals ◽  
2018 ◽  
Vol 8 (6) ◽  
pp. 244 ◽  
Author(s):  
Tomoro Ide ◽  
Hirofumi Harada ◽  
Yoshiji Miyamura ◽  
Masato Imai ◽  
Satoshi Nakano ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Directional Solidification ◽  
Oxygen Concentration ◽  
Silicon Crystals
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