Formation of the Cd2Te2O7 phase induced by chemical etching and its influence on the electrical properties of Au/CdTe contacts

CrystEngComm ◽  
2020 ◽  
Vol 22 (46) ◽  
pp. 8118-8126
Author(s):  
Xiaokai Shi ◽  
Juanjuan Ma ◽  
Lijian Zheng ◽  
Xiuping Yue ◽  
Lijun Liu
Keyword(s):  
Electrical Properties ◽  
Leakage Current ◽  
Ohmic Contact ◽  
Chemical Etching ◽  
Etching Process ◽  
Surface Leakage Current ◽  
Surface Leakage

Cd2Te2O7 phase was firstly discovered at the surface of CdTe after chemical etching process. Such phase is confirmed to increase the surface leakage current and optimize the ohmic contact of Au/CdTe.

APPLICATION OF EPITAXIAL UNIPOLAR BARRIERS TO REDUCE NOISE CURRENTS IN PHOTODETECTORS

2011 ◽  
Vol 20 (03) ◽  
pp. 557-564
Author(s):  
G. R. SAVICH ◽  
J. R. PEDRAZZANI ◽  
S. MAIMON ◽  
G. W. WICKS
Keyword(s):  
Leakage Current ◽  
Surface Passivation ◽  
Leakage Currents ◽  
Type Region ◽  
Surface Leakage Current ◽  
Unipolar Barrier ◽  
Trap Assisted Tunneling ◽  
Assisted Tunneling ◽  
Tunneling Currents ◽  
Surface Leakage

Tunneling currents and surface leakage currents are both contributors to the overall dark current which limits many semiconductor devices. Surface leakage current is generally controlled by applying a post-epitaxial passivation layer; however, surface passivation is often expensive and ineffective. Band-to-band and trap assisted tunneling currents cannot be controlled through surface passivants, thus an alternative means of control is necessary. Unipolar barriers, when appropriately applied to standard electronic device structures, can reduce the effects of both surface leakage and tunneling currents more easily and cost effectively than other methods, including surface passivation. Unipolar barriers are applied to the p -type region of a conventional, MBE grown, InAs based pn junction structures resulting in a reduction of surface leakage current. Placing the unipolar barrier in the n -type region of the device, has the added benefit of reducing trap assisted tunneling current as well as surface leakage currents. Conventional, InAs pn junctions are shown to exhibit surface leakage current while unipolar barrier photodiodes show no detectable surface currents.

scholarly journals Highly Rectifying Heterojunctions Formed by Annealed ZnO Nanorods on GaN Substrates

Nanomaterials ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 508 ◽  
Author(s):  
Stanislav Tiagulskyi ◽  
Roman Yatskiv ◽  
Hana Faitová ◽  
Šárka Kučerová ◽  
David Roesel ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Leakage Current ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Zno Nanorods ◽  
Carrier Injection ◽  
Ion Beam Lithography ◽  
Current Voltage ◽  
P Type ◽  
Surface Leakage

We study the effect of thermal annealing on the electrical properties of the nanoscale p-n heterojunctions based on single n-type ZnO nanorods on p-type GaN substrates. The ZnO nanorods are prepared by chemical bath deposition on both plain GaN substrates and on the substrates locally patterned by focused ion beam lithography. Electrical properties of single nanorod heterojunctions are measured with a nanoprobe in the vacuum chamber of a scanning electron microscope. The focused ion beam lithography provides a uniform nucleation of ZnO, which results in a uniform growth of ZnO nanorods. The specific configuration of the interface between the ZnO nanorods and GaN substrate created by the focused ion beam suppresses the surface leakage current and improves the current-voltage characteristics. Further improvement of the electrical characteristics is achieved by annealing of the structures in nitrogen, which limits the defect-mediated leakage current and increases the carrier injection efficiency.

The Variation of Surface Leakage Current after Thermal Treatment for CdTe

2002 ◽  
Vol 229 (1) ◽  
pp. 79-82
Author(s):  
Y.J. Choi ◽  
K.N. Oh ◽  
I.J. Kim ◽  
Y.H. Kim ◽  
Y. Yi ◽  
...  
Keyword(s):  
Thermal Treatment ◽  
Leakage Current ◽  
Surface Leakage Current ◽  
Surface Leakage

Study of surface leakage current of AlGaN/GaN high electron mobility transistors

2014 ◽  
Vol 104 (15) ◽  
pp. 153509 ◽  
Author(s):  
YongHe Chen ◽  
Kai Zhang ◽  
MengYi Cao ◽  
ShengLei Zhao ◽  
JinCheng Zhang ◽  
...  
Keyword(s):  
Leakage Current ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Surface Leakage Current ◽  
Electron Mobility Transistors ◽  
Surface Leakage

Surface Leakage Current in Rectifiers

1954 ◽  
Vol 25 (11) ◽  
pp. 1440-1441 ◽  
Author(s):  
Melvin Cutler ◽  
Hubert M. Bath
Keyword(s):  
Leakage Current ◽  
Surface Leakage Current ◽  
Surface Leakage
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