Controlling the nucleation process of InP/ZnS quantum dots using zeolite as a nucleation site

CrystEngComm ◽  
2020 ◽  
Vol 22 (20) ◽  
pp. 3474-3481
Author(s):  
Xiaopeng Zhou ◽  
Jiejun Ren ◽  
Xuan Dong ◽  
Xicheng Wang ◽  
Takatoshi Seto ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Nucleation Site ◽  
Emission Wavelength ◽  
Nucleation Process ◽  
Novel Synthesis ◽  
Synthesis Strategy

A novel synthesis strategy to adjust the emission wavelength of InP/ZnS quantum dots, using zeolite as a quantum dot nucleation template.

Measuring temperature heterogeneities during solar-photothermal heating using quantum dot nanothermometry

The Analyst ◽  
2021 ◽  
Author(s):  
Stephanie K. Loeb ◽  
Haoran Wei ◽  
Jae-Hong Kim
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Fluorescence Emission ◽  
Emission Wavelength ◽  
Wavelength Shift ◽  
Cdse Quantum Dots ◽  
Photothermal Heating

The fluorescence emission wavelength shift of CdSe quantum dots due to heat-induced lattice dilatation is used to spatially resolve temperatures in solar photothermal systems.

Extending emission wavelength of InAs/GaAs quantum dots beyond 1.3μm by using quantum dot bi-layer for broadband light source

2013 ◽  
Vol 378 ◽  
pp. 553-557 ◽  
Author(s):  
N. Ozaki ◽  
Y. Nakatani ◽  
S. Ohkouchi ◽  
N. Ikeda ◽  
Y. Sugimoto ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Light Source ◽  
Emission Wavelength ◽  
Broadband Light Source

MOVPE GROWTH OF THE InP BASED MID-IR EMISSION QUANTUM DOT STRUCTURES

2013 ◽  
Vol 01 (02) ◽  
pp. 1350002
Author(s):  
XIAOHONG TANG ◽  
ZONGYOU YIN ◽  
BAOLIN ZHANG
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Infrared Emission ◽  
Emission Wavelength ◽  
Growth Method ◽  
Metal Organic ◽  
Size Uniformity ◽  
Dot Density ◽  
Inas Quantum Dot ◽  
Ir Emission

In this paper, semiconductor quantum dot structures for mid-infrared emission were self-assembled on InP substrate by using metal–organic vapor phase epitaxy growth. The InAs quantum dots grown at different conditions have been investigated. To improve the grown quantum dot's shape, the dot density and the dot size uniformity, a two-step growth method has been used and investigated. By changing the composition of the In x Ga 1-x As matrix layer of the InAs / In x Ga 1-x As / InP quantum dot structure, emission wavelength of the InAs quantum dot structure has been extended to the longest > 2.35 μm measured at 77 K. For the narrower bandgap semiconductor InAsSb quantum dots, the emission wavelength was measured at > 2.8 μm.

Desorption induced formation of low-density GaN quantum dots: nanoscale correlation of structural and optical properties

2021 ◽  
Author(s):  
Hannes Schürmann ◽  
Gordon Schmidt ◽  
Frank Bertram ◽  
Christoph Berger ◽  
Sebastian Metzner ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Quantum Dot ◽  
Local Strain ◽  
Blue Shift ◽  
Emission Wavelength ◽  
Morphological Transition ◽  
Threading Dislocations ◽  
Structural And Optical Properties ◽  
Growth Interruption

Abstract We report on the formation process of GaN/AlN quantum dots which arises after the deposition of 1 - 2 monolayers of GaN on an AlN/sapphire template followed by a distinct growth interruption. The influence of the duration of a growth interruption on structural and optical properties of the GaN layer has been systematically investigated. Quantum dots develop from initially bulky GaN islands, which nucleate in close vicinity to bundles of threading dislocations. For prolonged growth interruptions a decreasing island size is observed which is consistent with a systematic blue shift of the emission wavelength. In addition, a fragmentation of the bulky GaN islands into several smaller islands occurs, strongly depending on local strain fields caused by threading dislocations as well as on a different facet orientation of the islands. This morphological transition during growth interruption eventually leads to GaN quantum dot formation which assemble as clusters with a density of 108 cm-2. Desorption of GaN is identified as the major source for this morphological transition. The growth interruption time allows for tuning of the quantum dot emission wavelength in the UV spectral range.

ZnSe:Te/ZnSeS/ZnS nanocrystals: an access to cadmium-free pure-blue quantum-dot light-emitting diodes

Nanoscale ◽  
2020 ◽  
Vol 12 (21) ◽  
pp. 11556-11561 ◽  
Author(s):  
Zhen Bao ◽  
Zhen-Feng Jiang ◽  
Qiang Su ◽  
Hsin-Di Chiu ◽  
Heesun Yang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Blue Emission ◽  
Specific Structure ◽  
Emission Wavelength ◽  
Light Emitting ◽  
Zns Nanocrystals

The emission wavelength of ZnSe/ZnS quantum dots was successfully tuned from the violet (∼420 nm) to pure-blue (∼455 nm) region by doping Te into the ZnSe core. A specific structure QLED fabricated with ZnSe:0.03Te/ZnSeS/ZnS QDs realized pure-blue emission.

NiAg-graphene quantum dot-graphene hybrid with high oxidase-like catalytic activity for sensitive colorimetric detection of malathion

2021 ◽  
Author(s):  
Xu Dan ◽  
Ruiyi Li ◽  
Qinsheng Wang ◽  
Yongqiang Yang ◽  
Haiyan Zhu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Graphene Oxide ◽  
Catalytic Activity ◽  
Quantum Dot ◽  
Colorimetric Detection ◽  
Graphene Quantum Dots ◽  
Functionalized Graphene ◽  
Graphene Quantum Dot ◽  
Nickel Silver

The paper reports the synthesis of nickel-silver-graphene quantum dot-graphene hybrid. Histidine-functionalized graphene quantum dots (His-GQDs) were bonded to graphene oxide (GO) and then combined with Ni2+ and Ag+ to form...

scholarly journals Effect of Growth Temperature on the Characteristics of CsPbI3-Quantum Dots Doped Perovskite Film

Molecules ◽  
2021 ◽  
Vol 26 (15) ◽  
pp. 4439
Author(s):  
Shui-Yang Lien ◽  
Yu-Hao Chen ◽  
Wen-Ray Chen ◽  
Chuan-Hsi Liu ◽  
Chien-Jung Huang
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Quantum Dots ◽  
Quantum Dot ◽  
Growth Temperature ◽  
Electron Mobility ◽  
Surface Defects ◽  
Different Temperatures ◽  
Pb Doping ◽  
Pristine Film

In this study, adding CsPbI3 quantum dots to organic perovskite methylamine lead triiodide (CH3NH3PbI3) to form a doped perovskite film filmed by different temperatures was found to effectively reduce the formation of unsaturated metal Pb. Doping a small amount of CsPbI3 quantum dots could enhance thermal stability and improve surface defects. The electron mobility of the doped film was 2.5 times higher than the pristine film. This was a major breakthrough for inorganic quantum dot doped organic perovskite thin films.

Carbon quantum dot-sensitized hollow TiO2 spheres for high-performance visible light photocatalysis

2021 ◽  
Author(s):  
Xianfeng Zhang ◽  
Zongqun Li ◽  
Shaowen Xu ◽  
Yaowen Ruan
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Visible Light ◽  
Photocatalytic Degradation ◽  
High Performance ◽  
Carbon Quantum Dots ◽  
Visible Light Photocatalysis ◽  
Carbon Quantum Dot ◽  
Visible Light Photocatalytic

TiO2/CQD composites were synthesized through carbon quantum dots covalently attached to the surface of hollow TiO2 spheres for visible light photocatalytic degradation of organics.

scholarly journals Flexible and efficient perovskite quantum dot solar cells via hybrid interfacial architecture

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Long Hu ◽  
Qian Zhao ◽  
Shujuan Huang ◽  
Jianghui Zheng ◽  
Xinwei Guan ◽  
...  
Keyword(s):  
Thin Film ◽  
Quantum Dots ◽  
Solar Cells ◽  
Quantum Dot ◽  
High Performance ◽  
Mechanical Stability ◽  
Mechanical Adhesion ◽  
Perovskite Quantum Dots ◽  
Efficient Charge ◽  
Photovoltaic Technologies

AbstractAll-inorganic CsPbI3 perovskite quantum dots have received substantial research interest for photovoltaic applications because of higher efficiency compared to solar cells using other quantum dots materials and the various exciting properties that perovskites have to offer. These quantum dot devices also exhibit good mechanical stability amongst various thin-film photovoltaic technologies. We demonstrate higher mechanical endurance of quantum dot films compared to bulk thin film and highlight the importance of further research on high-performance and flexible optoelectronic devices using nanoscale grains as an advantage. Specifically, we develop a hybrid interfacial architecture consisting of CsPbI3 quantum dot/PCBM heterojunction, enabling an energy cascade for efficient charge transfer and mechanical adhesion. The champion CsPbI3 quantum dot solar cell has an efficiency of 15.1% (stabilized power output of 14.61%), which is among the highest report to date. Building on this strategy, we further demonstrate a highest efficiency of 12.3% in flexible quantum dot photovoltaics.

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