A perfectly oriented, free-standing and transparent titania nanosheet film with the band gap of a monolayer

2020 ◽  
Vol 56 (68) ◽  
pp. 9811-9814
Author(s):  
Keisuke Awaya ◽  
Shintaro Ida
Keyword(s):  
Band Gap ◽  
Spin Coating ◽  
Wide Band ◽  
Spin Coating Technique ◽  
Free Standing ◽  
Wide Band Gap ◽  
Coating Technique

A perfectly oriented transparent, free-standing titania nanosheet film prepared using the spin-coating technique showed a wide band gap that corresponded to that of the monolayer nanosheet despite the stacking of hundreds of layers.

Recent advances in free-standing single crystalline wide band-gap semiconductors and their applications: GaN, SiC, ZnO, β-Ga2O3, and diamond

2017 ◽  
Vol 5 (33) ◽  
pp. 8338-8354 ◽  
Author(s):  
Munho Kim ◽  
Jung-Hun Seo ◽  
Uttam Singisetti ◽  
Zhenqiang Ma
Keyword(s):  
Band Gap ◽  
Wide Band ◽  
Free Standing ◽  
Wide Band Gap ◽  
Single Crystalline ◽  
Crystalline Semiconductor ◽  
Recent Advances ◽  
Wide Band Gap Semiconductors

Free-standing single crystalline semiconductor membranes have gained intensive attention over the last few years due to their versatile usage in many applications.

Investigation of optical band gap and device parameters of rubrene thin film prepared using spin coating technique

2014 ◽  
Vol 582 ◽  
pp. 696-702 ◽  
Author(s):  
Nihat Tuğluoğlu ◽  
Behzad Barış ◽  
Hatice Gürel ◽  
Serdar Karadeniz ◽  
Ömer Faruk Yüksel
Keyword(s):  
Thin Film ◽  
Band Gap ◽  
Spin Coating ◽  
Optical Band Gap ◽  
Spin Coating Technique ◽  
Coating Technique

TEM and cathodoluminescence of precipitates in II-VI semiconductors

1988 ◽  
Vol 46 ◽  
pp. 488-489
Author(s):  
Joanna L. Batstone
Keyword(s):  
Crystal Growth ◽  
Band Gap ◽  
Local Strain ◽  
Wide Band ◽  
Optoelectronic Device ◽  
Wide Band Gap ◽  
Bulk Crystal Growth ◽  
Transmission Electron ◽  
Device Applications ◽  
Stoichiometry Control

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.

Wide Band-Gap Kesterite Thin Films for Photovoltaic Applications

2018 ◽  
Author(s):  
Raquel Caballero ◽  
Leonor de la Cueva ◽  
Andrea Ruiz-Perona ◽  
Yudenia Sánchez ◽  
Markus Neuschitzer ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap ◽  
Photovoltaic Applications

Preparation and Characterization of Polyvinylidene Fluoride/ZrO2-TiO2 Optical Film with Wide Band Gap and High Refractive Index

2013 ◽  
Vol 28 (6) ◽  
pp. 671-676 ◽  
Author(s):  
Yu-Qing ZHANG ◽  
Li-Li ZHAO ◽  
Shi-Long XU ◽  
Chao ZHANG ◽  
Xiao-Ying CHEN ◽  
...  
Keyword(s):  
Refractive Index ◽  
Band Gap ◽  
Polyvinylidene Fluoride ◽  
Wide Band ◽  
High Refractive Index ◽  
Wide Band Gap ◽  
Optical Film
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