Ultra-broadband near-infrared emission CuInS2/ZnS quantum dots with high power efficiency and stability for the theranostic applications of mini light-emitting diodes

2020 ◽  
Vol 56 (59) ◽  
pp. 8285-8288
Author(s):  
Wen-Tse Huang ◽  
Suk-Young Yoon ◽  
Bo-Han Wu ◽  
Kuang-Mao Lu ◽  
Chih-Min Lin ◽  
...  
Keyword(s):  
Power Efficiency ◽  
Near Infrared ◽  
Infrared Emission ◽  
Light Emitting ◽  
Vein Imaging ◽  
Precursor Decomposition ◽  
Theranostic Applications ◽  
Penetration Tests ◽  
Near Infrared Emission ◽  
High Power Efficiency

Broadband near-infrared CuInS2/ZnS quantum with up to 94.8% quantum yield was synthesized with fast precursor decomposition. The better power efficiency and stability of CuInS2/ZnS mini-LED were performed with penetration tests and vein imaging.

Ab Initio Two-sites Occupancy and Broadband Near-Infrared Emission of Cr3+ in Li2MgZrO4

2021 ◽  
Author(s):  
Xue Zhou ◽  
Jinmeng Xiang ◽  
Jiming Zheng ◽  
Xiaoqi Zhao ◽  
Hao Suo ◽  
...  
Keyword(s):  
Plant Growth ◽  
Ab Initio ◽  
Light Source ◽  
Near Infrared ◽  
Broad Band ◽  
Infrared Emission ◽  
Night Vision ◽  
Light Emitting ◽  
Non Destructive ◽  
Near Infrared Emission

Near-infrared (NIR) phosphor-converted light-emitting diodes (pc-LEDs) light source have great potential in non-destructive detection, promoting plant growth and night vision applications, while the discovery of a broad-band NIR phosphor still...

Near-infrared polymer light-emitting diodes based on an inverted device structure

2019 ◽  
Vol 7 (39) ◽  
pp. 12114-12120 ◽  
Author(s):  
Jin Xu ◽  
Feng Peng ◽  
Zhenzhong Sun ◽  
Lei Yu ◽  
Wei Yang ◽  
...  
Keyword(s):  
Near Infrared ◽  
Infrared Emission ◽  
Device Structure ◽  
Light Emitting ◽  
Polymer Light Emitting Diodes ◽  
Cavity Effects ◽  
Micro Cavity ◽  
Near Infrared Emission ◽  
Inverted Device ◽  
Inverted Device Structure

Micro-cavity effects were applied to acquire near-infrared emission using normal red-emitting materials through an inverted device structure.

Distorted–octahedral site‒occupation induced high efficiency broadband near infrared emission in LiScGe2O6:Cr3+ phosphor

2021 ◽  
Author(s):  
Xuehua Chen ◽  
Enhai Song ◽  
Yayun Zhou ◽  
Fanquan He ◽  
Jiqiao Yang ◽  
...  
Keyword(s):  
Octahedral Site ◽  
Near Infrared ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Optoelectronic Device ◽  
Infrared Emission ◽  
Light Emitting ◽  
Distorted Octahedral ◽  
Nir Emission ◽  
Near Infrared Emission

The discovery of high efficiency broadband Near-infrared (NIR) emission phosphor for phosphor-converted light-emitting diodes (NIR-pc-LEDs) is of importance for optoelectronic device and the emerging applications. Herein, a highly efficient broadband...

Near-infrared emission from tris(8-hydroxyquinoline) aluminum based microcavity light emitting diodes

2004 ◽  
Vol 399 (4-6) ◽  
pp. 446-450 ◽  
Author(s):  
A.B. Djurišić ◽  
C.Y. Kwong ◽  
C.H. Cheung ◽  
H.L. Tam ◽  
K.W. Cheah ◽  
...  
Keyword(s):  
Near Infrared ◽  
Light Emitting Diodes ◽  
Infrared Emission ◽  
Light Emitting ◽  
Near Infrared Emission

scholarly journals Divalent europium-doped near-infrared-emitting phosphor for light-emitting diodes

2019 ◽  
Vol 10 (1) ◽  
Author(s):  
Jianwei Qiao ◽  
Guojun Zhou ◽  
Yayun Zhou ◽  
Qinyuan Zhang ◽  
Zhiguo Xia
Keyword(s):  
Near Infrared ◽  
Light Emitting Diodes ◽  
Photophysical Properties ◽  
Infrared Emission ◽  
Infrared Light ◽  
Light Emitting ◽  
Coordination Numbers ◽  
Divalent Europium ◽  
Light Excitation ◽  
Near Infrared Emission

AbstractNear-infrared luminescent materials exhibit unique photophysical properties that make them crucial components in photonic, optoelectronic and biological applications. As broadband near infrared phosphors activated by transition metal elements are already widely reported, there is a challenge for next-generation materials discovery by introducing rare earth activators with 4f-5d transition. Here, we report an unprecedented phosphor K3LuSi2O7:Eu2+ that gives an emission band centered at 740 nm with a full-width at half maximum of 160 nm upon 460 nm blue light excitation. Combined structural and spectral characterizations reveal a selective site occupation of divalent europium in LuO6 and K2O6 polyhedrons with small coordination numbers, leading to the unexpected near infrared emission. The fabricated phosphor-converted light-emitting diodes have great potential as a non-visible light source. Our work provides the design principle of near infrared emission in divalent europium-doped inorganic solid-state materials and could inspire future studies to further explore near-infrared light-emitting diodes.

An effective strategy to obtain near-infrared emission from shoulder to shoulder-type binuclear platinum(II) complex based on fused pyrene core bridged isoquinoline ligands

2021 ◽  
Author(s):  
Kai Zhang ◽  
Tianyu Wang ◽  
Tingwen Wu ◽  
Zhenming Ding ◽  
Qiang Zhang ◽  
...  
Keyword(s):  
Near Infrared ◽  
Light Emitting Diodes ◽  
Infrared Emission ◽  
Effective Strategy ◽  
Solution Processed ◽  
Light Emitting ◽  
Nir Emission ◽  
Polymer Light Emitting Diodes ◽  
Near Infrared Emission

With the meteoric progress of near-infrared (NIR) emission materials for solution-processed polymer light-emitting diodes (PLEDs), exploring efficient NIR materials is still a key science issue. Here, bearing acceptor (A)-donor-(D)-acceptor (A)...

Broadband near-infrared emission of La3Ga5GeO14:Tb3+,Cr3+ phosphors: energy transfer, persistent luminescence and application in NIR light-emitting diodes

2020 ◽  
Vol 8 (34) ◽  
pp. 11760-11770
Author(s):  
Biao Bai ◽  
Peipei Dang ◽  
Zhongli Zhu ◽  
Hongzhou Lian ◽  
Jun Lin
Keyword(s):  
Energy Transfer ◽  
Near Infrared ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Infrared Emission ◽  
Persistent Luminescence ◽  
Light Emitting ◽  
Nir Light ◽  
Near Infrared Emission

A broadband near-infrared La3Ga5GeO14:Tb3+,Cr3+ phosphor with high efficiency was achieved via design of energy transfer for NIR LEDs.

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