scholarly journals Electronic origin of negative thermal expansion in V2OPO4

2020 ◽  
Vol 56 (48) ◽  
pp. 6523-6526 ◽  
Author(s):  
Elise Pachoud ◽  
James Cumby ◽  
Jon Wright ◽  
Branimir Raguž ◽  
Robert Glaum ◽  
...  

Unusual negative thermal expansion in V2OPO4 is discovered to arise from phase coexistence around the charge ordering transition at 605 K.

2010 ◽  
Vol 405 (11) ◽  
pp. S92-S94 ◽  
Author(s):  
Mariano de Souza ◽  
Daniel Hofmann ◽  
Pascale Foury-Leylekian ◽  
Alec Moradpour ◽  
Jean-Paul Pouget ◽  
...  

2019 ◽  
Vol 58 (9) ◽  
pp. 5380-5383 ◽  
Author(s):  
Yongqiang Qiao ◽  
Yuzhu Song ◽  
Kun Lin ◽  
Xinzhi Liu ◽  
Alexandra Franz ◽  
...  

2002 ◽  
Vol 14 (23) ◽  
pp. 5747-5753 ◽  
Author(s):  
R Przenioslo ◽  
I Sosnowska ◽  
E Suard ◽  
A Hewat ◽  
A N Fitch

2021 ◽  
Vol 33 (4) ◽  
pp. 1498-1505
Author(s):  
Takumi Nishikubo ◽  
Takahiro Ogata ◽  
Lalitha Kodumudi Venkataraman ◽  
Daniel Isaia ◽  
Zhao Pan ◽  
...  

2021 ◽  
Vol 6 (1) ◽  
Author(s):  
Yongqiang Qiao ◽  
Yuzhu Song ◽  
Andrea Sanson ◽  
Longlong Fan ◽  
Qiang Sun ◽  
...  

AbstractNegative thermal expansion (NTE) is an intriguing property, which is generally triggered by a single NTE mechanism. In this work, an enhanced NTE (αv = −32.9 × 10−6 K−1, ΔT = 175 K) is achieved in YbMn2Ge2 intermetallic compound to be caused by a dual effect of magnetism and valence transition. In YbMn2Ge2, the Mn sublattice that forms the antiferromagnetic structure induces the magnetovolume effect, which contributes to the NTE below the Néel temperature (525 K). Concomitantly, the valence state of Yb increases from 2.40 to 2.82 in the temperature range of 300–700 K, which simultaneously causes the contraction of the unit cell volume due to smaller volume of Yb3+ than that of Yb2+. As a result, such combined effect gives rise to an enhanced NTE. The present study not only sheds light on the peculiar NTE mechanism of YbMn2Ge2, but also indicates the dual effect as a possible promising method to produce enhanced NTE materials.


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