Nitroaromatics as n-type organic semiconductors for field effect transistors

2020 ◽  
Vol 56 (47) ◽  
pp. 6432-6435 ◽  
Author(s):  
Muhammad Rizwan Niazi ◽  
Ehsan Hamzehpoor ◽  
Pegah Ghamari ◽  
Igor F. Perepichka ◽  
Dmitrii F. Perepichka
Keyword(s):  
Crystal Structure ◽  
Charge Transport ◽  
Organic Semiconductors ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Molecular And Crystal Structure

The utility of the NO2-group in the design of organic semiconductors is demonstrated by fabricating OFETs with 5 nitrofluorenone derivatives and analyzing the effects of molecular and crystal structure on their charge transport characteristics.

On Razors Edge: Influence of the Source Insulator Edge on the Charge Transport of Vertical Organic Field Effect Transistors

MRS Advances ◽  
2017 ◽  
Vol 2 (23) ◽  
pp. 1249-1257 ◽  
Author(s):  
F. Michael Sawatzki ◽  
Alrun A. Hauke ◽  
Duy Hai Doan ◽  
Peter Formanek ◽  
Daniel Kasemann ◽  
...  
Keyword(s):  
Charge Transport ◽  
Organic Semiconductors ◽  
Organic Solar Cells ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Electrical Power ◽  
Strong Impact ◽  
Organic Field Effect Transistor ◽  
Effect Transistor

ABSTRACTTo benefit from the many advantages of organic semiconductors like flexibility, transparency, and small thickness, electronic devices should be entirely made from organic materials. This means, additionally to organic LEDs, organic solar cells, and organic sensors, we need organic transistors to amplify, process, and control signals and electrical power. The standard lateral organic field effect transistor (OFET) does not offer the necessary performance for many of these applications. One promising candidate for solving this problem is the vertical organic field effect transistor (VOFET). In addition to the altered structure of the electrodes, the VOFET has one additional part compared to the OFET – the source-insulator. However, the influence of the used material, the size, and geometry of this insulator on the behavior of the transistor has not yet been examined. We investigate key-parameters of the VOFET with different source insulator materials and geometries. We also present transmission electron microscopy (TEM) images of the edge area. Additionally, we investigate the charge transport in such devices using drift-diffusion simulations and the concept of a vertical organic light emitting transistor (VOLET). The VOLET is a VOFET with an embedded OLED. It allows the tracking of the local current density by measuring the light intensity distribution.We show that the insulator material and thickness only have a small influence on the performance, while there is a strong impact by the insulator geometry – mainly the overlap of the insulator into the channel. By tuning this overlap, on/off-ratios of 9x105 without contact doping are possible.

scholarly journals Ladder-type bithiophene imide-based organic semiconductors: understanding charge transport mechanisms in organic field effect transistors

2020 ◽  
Vol 8 (44) ◽  
pp. 15759-15770
Author(s):  
Alexandra Harbuzaru ◽  
Iratxe Arrechea-Marcos ◽  
Alberto D. Scaccabarozzi ◽  
Yingfeng Wang ◽  
Xugang Guo ◽  
...  
Keyword(s):  
Charge Transport ◽  
Chain Length ◽  
Organic Semiconductors ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Transport Mechanisms ◽  
Organic Field Effect Transistors

Different charge transport mechanisms at the device interface are found for a series of ladder-type semiconductors with increasing chain length.

Unification of the Charge Transport in Field-Effect Transistors and Light-Emitting Diodes Based on Organic Semiconductors

2011 ◽  
Vol 687 ◽  
pp. 222-227 ◽  
Author(s):  
L. G. Wang ◽  
Huai Wu Zhang ◽  
Xiao Li Tang ◽  
Yuan Qiang Song
Keyword(s):  
Charge Transport ◽  
Organic Semiconductors ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Semiconducting Polymers ◽  
Light Emitting ◽  
Current Voltage ◽  
Physically Based ◽  
Current Voltage Characteristics ◽  
Gaussian Disorder Model

A physically based mathematical model for the charge transport in field-effect transistors and lighting-emitting diodes based on disordered organic semiconductors has been presented. It is developed basing on the Gaussian disorder model and extends the pioneering work of Pasveer et al. [Phys. Rev. Lett. 94, 206601 (2005)] to higher carrier densities and large electric field. The experimental current voltage characteristics in devices based on semiconducting polymers are excellently reproduced with this model. Furthermore, we calculate and analyze some electrical properties for the relevant polymers in detail using this model.

Rational design and crystal structure prediction of ring-fused double-PDI compounds as n-channel organic semiconductors: a DFT study

2021 ◽  
Author(s):  
Suryakanti Debata ◽  
Smruti R. Sahoo ◽  
Rudranarayan Khatua ◽  
Sridhar Sahu
Keyword(s):  
Crystal Structure ◽  
Charge Transport ◽  
Organic Semiconductors ◽  
Structure Prediction ◽  
Rational Design ◽  
Molecular Design ◽  
Design Strategy ◽  
Dft Study ◽  
Crystal Structure Prediction ◽  
Model Compounds

In this study, we present an effective molecular design strategy to develop the n-type charge transport characteristics in organic semiconductors, using ring-fused double perylene diimides (DPDIs) as the model compounds.

Balanced Ambipolar Charge Transport in Phenacene/Perylene Heterojunction-Based Organic Field-Effect Transistors

2021 ◽  
Vol 13 (7) ◽  
pp. 8631-8642
Author(s):  
Tomoya Taguchi ◽  
Fabio Chiarella ◽  
Mario Barra ◽  
Federico Chianese ◽  
Yoshihiro Kubozono ◽  
...  
Keyword(s):  
Charge Transport ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors

Linking polythiophene chains with vinylene-bridges: A way to improve charge transport in polymer field-effect transistors

2009 ◽  
Vol 47 (5) ◽  
pp. 1381-1392 ◽  
Author(s):  
Kun Lu ◽  
Xiangnan Sun ◽  
Yunqi Liu ◽  
Chongan Di ◽  
Hongxia Xi ◽  
...  
Keyword(s):  
Charge Transport ◽  
Field Effect ◽  
Field Effect Transistors
Sign in / Sign up

Export Citation Format

Share Document