A structural study of p-type A–D–A oligothiophenes: effects of regioregular alkyl sidechains on annealing processes and photovoltaic performances

2020 ◽  
Vol 8 (2) ◽  
pp. 567-580
Author(s):  
Calvin J. Lee ◽  
Fadi M. Jradi ◽  
Valerie D. Mitchell ◽  
Jonathan White ◽  
Christopher R. McNeill ◽  
...  
Keyword(s):  
Thin Film ◽  
Structural Study ◽  
Photovoltaic Performance ◽  
Type A ◽  
Design Guidelines ◽  
Film Morphology ◽  
Structure Property ◽  
P Type

Structure–property studies of p-type oligothiophene-based materials linking sidechain substituents, photovoltaic performance and thin-film morphology leading to key design guidelines.

scholarly journals Capacitance study of thin film SnO2 :F/p-type a-Si:H heterojunctions

2011 ◽  
Vol 3 ◽  
pp. 51-57 ◽  
Author(s):  
G. Cannella ◽  
F. Principato ◽  
M. Foti ◽  
C. Garozzo ◽  
S. Lombardo
Keyword(s):  
Thin Film ◽  
Type A ◽  
P Type

Planar, bulk and hybrid merocyanine/C60heterojunction devices: a case study on thin film morphology and photovoltaic performance

2012 ◽  
Vol 22 (10) ◽  
pp. 4473-4482 ◽  
Author(s):  
Antti Ojala ◽  
Hannah Bürckstümmer ◽  
Jaehyung Hwang ◽  
Katja Graf ◽  
Bernhard von Vacano ◽  
...  
Keyword(s):  
Thin Film ◽  
Photovoltaic Performance ◽  
Film Morphology

Systematic structure modification of a low bandgap conjugated polymer improves thin film morphology and photovoltaic performance by incorporating naphthalene into side chains

2015 ◽  
Vol 3 (29) ◽  
pp. 7669-7676 ◽  
Author(s):  
Ying Sun ◽  
Chao Zhang ◽  
Qizan Huang ◽  
Bin Dai ◽  
Baoping Lin ◽  
...  
Keyword(s):  
Thin Film ◽  
Active Layer ◽  
Conjugated Polymer ◽  
Photovoltaic Performance ◽  
Side Chain ◽  
Side Chains ◽  
Film Morphology ◽  
Structure Modification ◽  
Low Bandgap ◽  
Systematic Structure

A naphthalene group was incorporated into the polymer side chain to help the active layer spontaneously form good film morphology.

Optoelectronic characteristics of a-SiC:H-based pin thin film LEDs having a thin Mo buffer layer in contact with p-type a-Si:H

1998 ◽  
Vol 34 (14) ◽  
pp. 1433 ◽  
Author(s):  
Yen-Ann Chen ◽  
Yung-Hung Wu ◽  
Wen-Chin Tsay ◽  
Li-Hong Laih ◽  
Jyh-Wong Hong ◽  
...  
Keyword(s):  
Thin Film ◽  
Buffer Layer ◽  
Type A ◽  
P Type

Advanced Functional Materials: Intrinsic and Doped Silicon Oxide

2015 ◽  
Vol 1771 ◽  
pp. 3-8 ◽  
Author(s):  
Xiaodan Zhang ◽  
Bofei Liu ◽  
Lisha Bai ◽  
Fang jia ◽  
Shuo Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Band Gap ◽  
Silicon Oxide ◽  
Type A ◽  
Thin Film Solar Cells ◽  
Oxide Materials ◽  
Single Junction ◽  
Doped Silicon ◽  
P Type

ABSTRACTThe unique properties of silicon oxide materials, no matter intrinsic or doped, utilized in thin film solar cells (TFSCs) in the area of photovoltaic (PV) are making TFSCs one of the most attractive photovoltaic technologies for the development of high-performing electricity production units to be integrated in everyday life. In comparison to other silicon materials, the particular diphasic structure of silicon oxide materials, in which hydrogenated microcrystalline silicon (μc-Si:H) crystallites are surrounded by an oxygen-rich hydrogenated amorphous silicon (a-Si:H) phase, causes them present excellent photoelectrical material properties, such as a low-parasitic absorption in the broadband spectral range, independent controllability of longitudinal and lateral conductivity, refractive indices (3.5-2.0), band gap (2.0-2.6 eV) and conductivity tenability (with orders of 1-10-9 S/cm) with oxygen doping, and so on. Various types of silicon oxide materials, including intrinsic, p- or n- type, further applied in TFSCs have also played significant roles in improving the efficiency of various types of single-, dual-, and triple-junction thin-film solar cells from both the optical and electrical points of view. In this paper, we present our latest progress in studying the performance improvement role of intrinsic or doped silicon oxide materials in pin-type a-Si:H, a-SiGe:H, and μc-Si:H single-junction solar cells. By effectively tuning the band gap values of intrinsic a-SiOx:H materials with oxygen doping and adopting the layers with a suitable band gap (1.86 eV) as the P/I buffer layers of a-Si:H solar cells fabricated on metal organic chemical vapor deposition (MOCVD) boron-doped zinc oxide (ZnO:B) substrates, a significant Voc increases up to 909 mV and an excellent external quantum efficiency (EQE) response of 75% at the 400 nm typical wavelength can be achieved by matching the band gap discontinuity between the p-type nc-SiOx:H window and a-Si:H intrinsic layers. The serious leakage current characteristics of pin-type narrow-gap (Eg<1.5 eV) a-SiGe:H single-junction solar cells can also be finely tuned by integrating an n-type μc-SiOx:H layer with a small oxygen content in addition to improving the long-wavelength response, an effective approach gives rise to the highest FF of 70.62% for pin-type a-SiGe:H single-junction solar cells with an average band gap of 1.48 eV. In addition, our studies proved that the application of p-type μc-SiOx:H window layers in μc-Si:H single-junction solar cells can effectively improve the short-wavelength light coupling by suppressing the parasitic absorption and promoting the anti-reflectivity with a graded refractive index profile. On the basis of the optimum single-junction solar cells with omnipotent silicon oxide materials, an initial efficiency of 16.07% has been achieved for pin-type a-Si:H/a-SiGe:H/μc-Si:H triple-junction solar cells with an active area of 0.25 cm2. The omnipotent properties of silicon oxide layers in TFSCs, including effective optical coupling and trapping, suitability in compensating for the band gap discontinuity, the shunt-quenching capacity, and so on, make them likely to be extended to other types of solar cells such as polycrystalline chalcopyrite Cu(In,Ga)Se2 (CIGS) and perovskite-sensitized solar cells, opening up new opportunities for acquiring solar cells with higher performance.

A catalyst-free amorphous silicon-based tandem thin film photocathode with high photovoltage for solar water splitting

2015 ◽  
Vol 3 (30) ◽  
pp. 15583-15590 ◽  
Author(s):  
Bofei Liu ◽  
Zhonghua Jin ◽  
Lisha Bai ◽  
Junhui Liang ◽  
Qixing Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Water Splitting ◽  
Type A ◽  
Solar Water ◽  
Solar Water Splitting ◽  
Catalyst Free ◽  
P Type ◽  
Silicon Based

A catalyst-free and stable p-type a-SiC:H protected a-Si/a-SiGe tandem photocathode with high photovoltage is demonstrated for efficient solar water splitting.

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