Boosting the external quantum efficiency in perovskite light-emitting diodes by an exciton retrieving layer

2019 ◽  
Vol 7 (28) ◽  
pp. 8705-8711 ◽  
Author(s):  
Chunhong Gao ◽  
Ziyang Xiong ◽  
Ziqian He ◽  
Yajie Dong ◽  
Fuxing Yu ◽  
...  

High-efficiency perovskite LEDs fabricated by introducing an exciton retrieving layer are demonstrated. The optimized 3D CsPbBr3 LEDs achieved 2.5-fold luminance and 3.8-fold EQE enhancements compared with the control devices.

2019 ◽  
Author(s):  
Baiquan Liu ◽  
Yemliha Altintas ◽  
Lin Wang ◽  
Sushant Shendre ◽  
Manoj Sharma ◽  
...  

<p> Colloidal quantum wells (CQWs) are regarded as a new, highly promising class of optoelectronic materials thanks to their unique excitonic characteristics of high extinction coefficient and ultranarrow emission bandwidth. Although the exploration of CQWs in light-emitting diodes (LEDs) is impressive, the performance of CQW-LEDs lags far behind compared with other types of LEDs (e.g., organic LEDs, colloidal quantum-dot LEDs, and perovskite LEDs). Herein, for the first time, the authors show high-efficiency CQW-LEDs reaching close to the theoretical limit. A key factor for this high performance is the exploitation of hot-injection shell (HIS) growth of CQWs, which enables a near-unity photoluminescence quantum yield (PLQY), reduces nonradiative channels, ensures smooth films and enhances the stability. Remarkably, the PLQY remains 95% in solution and 87% in film despite rigorous cleaning. Through systematically understanding their shape-, composition- and device- engineering, the CQW-LEDs using CdSe/Cd<sub>0.25</sub>Zn<sub>0.75</sub>S core/HIS CQWs exhibit a maximum external quantum efficiency of 19.2%. Additionally, a high luminance of 23,490 cd m<sup>-2</sup>, extremely saturated red color with the Commission Internationale de L’Eclairage coordinates of (0.715, 0.283) and stable emission are obtained. The findings indicate that HIS grown CQWs enable high-performance solution-processed LEDs, which may pave the path for CQW-based display and lighting technologies.</p>


Author(s):  
Baiquan Liu ◽  
Yemliha Altintas ◽  
Lin Wang ◽  
Sushant Shendre ◽  
Manoj Sharma ◽  
...  

<p> Colloidal quantum wells (CQWs) are regarded as a new, highly promising class of optoelectronic materials thanks to their unique excitonic characteristics of high extinction coefficient and ultranarrow emission bandwidth. Although the exploration of CQWs in light-emitting diodes (LEDs) is impressive, the performance of CQW-LEDs lags far behind compared with other types of LEDs (e.g., organic LEDs, colloidal quantum-dot LEDs, and perovskite LEDs). Herein, for the first time, the authors show high-efficiency CQW-LEDs reaching close to the theoretical limit. A key factor for this high performance is the exploitation of hot-injection shell (HIS) growth of CQWs, which enables a near-unity photoluminescence quantum yield (PLQY), reduces nonradiative channels, ensures smooth films and enhances the stability. Remarkably, the PLQY remains 95% in solution and 87% in film despite rigorous cleaning. Through systematically understanding their shape-, composition- and device- engineering, the CQW-LEDs using CdSe/Cd<sub>0.25</sub>Zn<sub>0.75</sub>S core/HIS CQWs exhibit a maximum external quantum efficiency of 19.2%. Additionally, a high luminance of 23,490 cd m<sup>-2</sup>, extremely saturated red color with the Commission Internationale de L’Eclairage coordinates of (0.715, 0.283) and stable emission are obtained. The findings indicate that HIS grown CQWs enable high-performance solution-processed LEDs, which may pave the path for CQW-based display and lighting technologies.</p>


2017 ◽  
Vol 5 (22) ◽  
pp. 5372-5377 ◽  
Author(s):  
Ying-Li Shi ◽  
Feng Liang ◽  
Yun Hu ◽  
Xue-Dong Wang ◽  
Zhao-Kui Wang ◽  
...  

The maximum external quantum efficiency of the device is 11.46% using PVK doped Li-TFSI as the hole-transporting layer.


2020 ◽  
Vol 8 (37) ◽  
pp. 12959-12967
Author(s):  
Raja Kumaresan ◽  
Athithan Maheshwaran ◽  
Ho-Yeol Park ◽  
Kyungmin Sung ◽  
Jungmin Choi ◽  
...  

High efficiency green phosphorescent Ir(III) complexes with solubilizing groups introduced to enable non-halogenated solvent-based fabrication of PHOLEDs with high EQE and CE values.


2020 ◽  
Vol 8 (9) ◽  
pp. 2975-2984 ◽  
Author(s):  
Jie-Ji Zhu ◽  
Yuwen Chen ◽  
Yong-Hong Xiao ◽  
Xin Lian ◽  
Guo-Xi Yang ◽  
...  

In this work, four phenanthroimidazole (PI) based isomers TPA-PPI-PBI, TPA-PPI-NPBI, PBI-PPI-TPA and NPBI-PPI-TPA for high-efficiency deep-blue organic light-emitting diodes (OLEDs) have been designed and synthesized.


2015 ◽  
Vol 3 (14) ◽  
pp. 3304-3310 ◽  
Author(s):  
Liping Zhu ◽  
Zhongbin Wu ◽  
Jiangshan Chen ◽  
Dongge Ma

A rational design of the emission layers to achieve a high efficiency WOLED with reduced roll-off.


2018 ◽  
Vol 6 (26) ◽  
pp. 7042-7045 ◽  
Author(s):  
Yanping Wang ◽  
Wenjie Wang ◽  
Zhaoji Huang ◽  
Huahang Wang ◽  
Junting Zhao ◽  
...  

Red OLEDs (devices D1–D3) with a S-EML and a D-EML have been demonstrated to have different EQEs.


2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Yuwei Guo ◽  
Sofia Apergi ◽  
Nan Li ◽  
Mengyu Chen ◽  
Chunyang Yin ◽  
...  

AbstractPerovskite light emitting diodes suffer from poor operational stability, exhibiting a rapid decay of external quantum efficiency within minutes to hours after turn-on. To address this issue, we explore surface treatment of perovskite films with phenylalkylammonium iodide molecules of varying alkyl chain lengths. Combining experimental characterization and theoretical modelling, we show that these molecules stabilize the perovskite through suppression of iodide ion migration. The stabilization effect is enhanced with increasing chain length due to the stronger binding of the molecules with the perovskite surface, as well as the increased steric hindrance to reconfiguration for accommodating ion migration. The passivation also reduces the surface defects, resulting in a high radiance and delayed roll-off of external quantum efficiency. Using the optimized passivation molecule, phenylpropylammonium iodide, we achieve devices with an efficiency of 17.5%, a radiance of 1282.8 W sr−1 m−2 and a record T50 half-lifetime of 130 h under 100 mA cm−2.


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