A novel two-dimensional δ-InP3 monolayer with high stability, tunable bandgap, high carrier mobility, and gas sensing of NO2

2019 ◽  
Vol 7 (24) ◽  
pp. 7352-7359 ◽  
Author(s):  
Wencai Yi ◽  
Xin Chen ◽  
Zhixiu Wang ◽  
Yingchun Ding ◽  
Bingchao Yang ◽  
...  

δ-InP3 monolayer possesses high electronic mobility and worthwhile sensing performance toward N-based gases (particularly NO2).

2018 ◽  
Vol 6 (25) ◽  
pp. 11890-11897 ◽  
Author(s):  
Songsong Sun ◽  
Fanchen Meng ◽  
Hongyan Wang ◽  
Hui Wang ◽  
Yuxiang Ni

A novel semiconducting 2D material based on monolayer and bilayer SnP3 is proposed using first-principles calculations.


2016 ◽  
Vol 18 (44) ◽  
pp. 30379-30384 ◽  
Author(s):  
Peng-Fei Liu ◽  
Liujiang Zhou ◽  
Thomas Frauenheim ◽  
Li-Ming Wu

A novel two-dimensional material, g-Mg3N2, exhibits an intrinsic direct band gap of 1.86 eV, outstanding stability (2000 K) and a high carrier mobility of up to 103cm2V−1s−1which is larger than that of MoS2and close to that of few-layer phosphorene.


2018 ◽  
Vol 6 (34) ◽  
pp. 9175-9180 ◽  
Author(s):  
L. B. Meng ◽  
S. Ni ◽  
Y. J. Zhang ◽  
B. Li ◽  
X. W. Zhou ◽  
...  

A unique zigzag-shaped Cd2C nanosheet as a natural 2D semiconductor exhibits robust stability, high carrier mobility, and modest and tunable bandgap.


2021 ◽  
Vol 9 (14) ◽  
pp. 4971-4977
Author(s):  
Mehmet Emin Kilic ◽  
Kwang-Ryeol Lee

Tetrahexagonal AlN: a novel two-dimensional family for photocatalytic water splitting with exceptional mechanical, electronic, and optical properties.


Author(s):  
Kai Ren ◽  
Huabing Shu ◽  
Wenyi Huo ◽  
Zhen Cui ◽  
Jin Yu ◽  
...  

Two-dimensional (2D) materials with moderate bandgap and high carrier mobility are decent for the applications in the optoelectronics. In this work, we present a systematically investigation of the mechanical, electronic...


Author(s):  
Jingjing Yan ◽  
Jingli Ma ◽  
Mengyao Zhang ◽  
Ruoting Yang ◽  
Xu Chen ◽  
...  

Recently, hybrid lead-halide perovskites have attracted extensive attention because of their unique optoelectronic characteristics, such as ambipolar charge transport, tunable bandgap, high carrier mobility, low-temperature processing technique, and so on....


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