Solar-blind ultraviolet photodetection of an α-Ga2O3 nanorod array based on photoelectrochemical self-powered detectors with a simple, newly-designed structure

2019 ◽  
Vol 7 (23) ◽  
pp. 6867-6871 ◽  
Author(s):  
Junhua Zhang ◽  
Shujie Jiao ◽  
Dongbo Wang ◽  
Shiming Ni ◽  
Shiyong Gao ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Decay Time ◽  
Rise Time ◽  
Nanorod Array ◽  
Fast Response ◽  
Solar Blind ◽  
Self Powered

A newly-designed photoelectrochemical self-powered detector is applied to an α-Ga2O3 nanorod array to realize the detection of solar-blind ultraviolet light (wavelengths below 300 nm) and fast response (rise time of 0.076 s and decay time of 0.056 s).

Self-Powered Solar-Blind Photodetector with Fast Response Based on Au/β-Ga2O3 Nanowires Array Film Schottky Junction

2016 ◽  
Vol 8 (6) ◽  
pp. 4185-4191 ◽  
Author(s):  
Xing Chen ◽  
Kewei Liu ◽  
Zhenzhong Zhang ◽  
Chunrui Wang ◽  
Binghui Li ◽  
...  
Keyword(s):  
Fast Response ◽  
Schottky Junction ◽  
Solar Blind ◽  
Self Powered ◽  
Nanowires Array

High sensitivity and fast response and recovery times in a ZnO nanorod array/p-Si self-powered ultraviolet detector

2012 ◽  
Vol 101 (26) ◽  
pp. 261108 ◽  
Author(s):  
J. J. Hassan ◽  
M. A. Mahdi ◽  
S. J. Kasim ◽  
Naser M. Ahmed ◽  
H. Abu Hassan ◽  
...  
Keyword(s):  
High Sensitivity ◽  
Nanorod Array ◽  
Fast Response ◽  
Zno Nanorod ◽  
Ultraviolet Detector ◽  
Recovery Times ◽  
Response And Recovery ◽  
Zno Nanorod Array ◽  
Self Powered

2D Carbon Material/Silicon Heterojunctions for Fast Response Self-Powered Photodetector

2019 ◽  
Vol 18 (03n04) ◽  
pp. 1940088
Author(s):  
M. Scagliotti ◽  
M. Salvato ◽  
M. De Crescenzi ◽  
P. Castrucci ◽  
N. G. Kovalchuk ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Gate Voltage ◽  
Carbon Material ◽  
Rise Time ◽  
Pulsed Laser ◽  
Fast Response ◽  
Electrode Configuration ◽  
Single Walled Carbon Nanotube ◽  
Self Powered ◽  
Silicon Heterojunctions

Photodetectors (PDs) based on single-walled carbon nanotube film/silicon and graphene/silicon heterojunctions have been realized for fast applications. We investigated the response of the PDs to femtosecond pulsed laser using a three-electrode configuration for photoconductive operations. Both junction PDs exhibit rise times of some nanoseconds, detecting light from ultraviolet (275[Formula: see text]nm) to infrared (1150[Formula: see text]nm). Applying a gate voltage [Formula: see text], the rise time decreases down to about 1[Formula: see text]ns, making our devices comparable to most commercial PDs.

Self-powered solar-blind ZnGa2O4 UV photodetector with ultra-fast response speed

2020 ◽  
Vol 315 ◽  
pp. 112354 ◽  
Author(s):  
Dongyang Han ◽  
Kewei Liu ◽  
Qichao Hou ◽  
Xing Chen ◽  
Jialin Yang ◽  
...  
Keyword(s):  
Response Speed ◽  
Fast Response ◽  
Uv Photodetector ◽  
Solar Blind ◽  
Self Powered

High sensitivity and fast response self-powered solar-blind ultraviolet photodetector with a β-Ga2O3/spiro-MeOTAD p–n heterojunction

2020 ◽  
Vol 8 (13) ◽  
pp. 4502-4509 ◽  
Author(s):  
Zuyong Yan ◽  
Shan Li ◽  
Zeng Liu ◽  
Yusong Zhi ◽  
Jie Dai ◽  
...  
Keyword(s):  
High Sensitivity ◽  
Fast Response ◽  
Ultraviolet Photodetector ◽  
Uv Photodetector ◽  
Inorganic P ◽  
Solar Blind ◽  
Self Powered

A β-Ga2O3/spiro-MeOTAD organic–inorganic p–n heterojunction was fabricated for use in a high sensitivity and fast response self-powered solar-blind UV photodetector.

Fast-response self-powered solar-blind photodetector based on Pt/β-Ga2O3 schottky barrier diodes

Optik ◽  
2021 ◽  
pp. 167715
Author(s):  
Bo Peng ◽  
Lei Yuan ◽  
Hongpeng Zhang ◽  
Hongjuan Cheng ◽  
Shengnan Zhang ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Fast Response ◽  
Schottky Barrier Diodes ◽  
Solar Blind ◽  
Self Powered
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