Improving the optical and crystal properties of ZnO nanotubes via a metallic glass quantum dot underlayer

2019 ◽  
Vol 7 (17) ◽  
pp. 5163-5171 ◽  
Author(s):  
Bohr-Ran Huang ◽  
Jinn P. Chu ◽  
Cheng-Liang Hsu ◽  
Joseph E. Greene ◽  
You-Syuan Chen ◽  
...  
Keyword(s):  
Metallic Glass ◽  
Quantum Dot ◽  
Glass Substrate ◽  
High Density ◽  
Crystal Properties ◽  
Zno Nanotubes

In this study, high density (∼38 μm−2) ZnO nanotubes (NTs) were hydrothermally synthesized on a Cu47.2Zr42.1Al6.7Ti4.0 metallic glass quantum dot (MGQD)/glass substrate.

scholarly journals High density of shear bands in the Vitreloy bulk metallic glass subjected to high-pressure torsion

2021 ◽  
Vol 1008 ◽  
pp. 012031
Author(s):  
Vasily Astanin ◽  
Dmitry Gunderov ◽  
Zhi Qiang Ren ◽  
Ruslan Valiev ◽  
Jing Tao Wang
Keyword(s):  
High Pressure ◽  
Metallic Glass ◽  
Bulk Metallic Glass ◽  
High Pressure Torsion ◽  
Shear Bands ◽  
High Density

Direct Fabrication of Uniform and High Density Sub-10-nm Etching Mask Using Ferritin Molecules on Si and GaAs Surface for Actual Quantum-Dot Superlattice

2010 ◽  
Vol 4 (1) ◽  
pp. 015202 ◽  
Author(s):  
Makoto Igarashi ◽  
Rikako Tsukamoto ◽  
Chi-Hsien Huang ◽  
Ichiro Yamashita ◽  
Seiji Samukawa
Keyword(s):  
Quantum Dot ◽  
High Density ◽  
Gaas Surface ◽  
Direct Fabrication ◽  
Etching Mask

3D IPD on Thru Glass Via Substrate using panel Manufacturing Technology

2017 ◽  
Vol 2017 (1) ◽  
pp. 000097-000102 ◽  
Author(s):  
Takamasa Takano ◽  
Satoru Kuramochi ◽  
Hobie Yun
Keyword(s):  
Form Factor ◽  
Quality Factor ◽  
Glass Substrate ◽  
High Density ◽  
Color Filter ◽  
Glass Panel ◽  
Low Resistance ◽  
Low Dielectric ◽  
Front End ◽  
Rf Front End

Abstract As electronic products become smaller and thinner with increasing number of functions, the demand for high density and high integration becomes stronger. Glass has many properties that make it an ideal substrate for high integration substrate such as; ultra high resistivity, adjustable thermal expansion (CTE) high modulus, low dielectric constant, low dielectric loss and manufacturability with large panel sizes. Multi-bands with carrier aggregation, Wi-Fi/GPS coexistence, and LTE-U make RF front end more and more complicated. 3D IPD (integrated passive devices) on Glass substrate technology could be advantage solution include reducing power consumption and small form factor. This paper presents a demonstration of 3D RF front end filters using 3D solenoid inductors with through glass vias (TGV) and Cu-SiN-Cu MIM structure on Gen1 glass substrate (300mm × 400mm) panel format using color filter manufacturing line for flat panel display. For inductors, drastic performance (size and low resistance therefore high-quality factor) improvement have been demonstrated by technology evolutions from 3D solenoid using TGV with conformal Cu plating method, achieving low resistance of 3.1mohm per 70um diameter TGV on a 400um thick glass panel. This low-resistance TGV with 2.7mOhm/sq TGV connections on both sides of the glass substrate, record high inductor quality factor of 39 was obtained at 2.5GHz using five and half turn inductor of 7.9nH inductance, For capacitors, we have successfully integrated a Cu MIM (metal-insulator-metal) structure by using 15um thick Cu plates and dielectric, resulting in high capacitance density of 0.26nF/mm2 for RF application. By integrating TGV inductor-first and MIM capacitor-next, high-performance and high-density LC components are synthesized to perform as RF front end filters such as low-pass filters, diplexers, triplexers, and multiplexers. The 3D inductors, Cu MIM, LC resonators and filters were successfully integrated using glass panel manufacturing infrastructure for the first time. Process characterization and process control monitors were evaluated at the panel level to address high-volume and high-yield manufacturability of RF filters with the unprecedented filter performance in terms of insertion loss and out of band rejections in smaller form factor than any other technologies have achieved so far. Furthermore, the TGV filters were mounted on electrical evaluation boards as well as JEDEC standard testing boards to check any device-level, chip-level, and board-level reliabilities associated with glass or TGV materials as well as their interaction with Cu, SiN, polymer inter layer dielectric materials, and solder joints, showing no performance degradations during thermal cycling, drop shock, bending, or high-power testing situations.

Multilayer Glass Substrate with High Density Via Structure for All Inorganic Multi-chip Module

2019 ◽  
Author(s):  
Toshiki Iwai ◽  
Taiji Sakai ◽  
Daisuke Mizutani ◽  
Seiki Sakuyama ◽  
Kenji Iida ◽  
...  
Keyword(s):  
Glass Substrate ◽  
High Density

Formation mechanisms of agglomerations in high-density InAs/GaAs quantum dot multi-layer structures

2020 ◽  
Vol 508 ◽  
pp. 145218 ◽  
Author(s):  
N. Ruiz-Marín ◽  
D.F. Reyes ◽  
V. Braza ◽  
S. Flores ◽  
A. Gonzalo ◽  
...  
Keyword(s):  
Quantum Dot ◽  
High Density ◽  
Formation Mechanisms ◽  
Layer Structures ◽  
Gaas Quantum Dot
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