A facile way for scalable fabrication of silver nanowire network electrodes for high-performance and foldable smart windows

2020 ◽  
Vol 8 (17) ◽  
pp. 8620-8628
Author(s):  
Shengyun Huang ◽  
Qingzhe Zhang ◽  
Fan Yang ◽  
Deepak Thrithamarassery Gangadharan ◽  
Pandeng Li ◽  
...  

Ag NW TCE based SPDs show high performance (optical modulation 60.2%; switching time 21 s) and excellent flexibility (folded 180°).

Author(s):  
Pengyang Lei ◽  
Jinhui Wang ◽  
Ping Zhang ◽  
Shiyou Liu ◽  
Siyu Zhang ◽  
...  

A uniform porous NiCoO2 nanowire film was successfully grown on a transparent conductive substrate for transparent-to-brownish grey electrochromic smart windows with wide-band optical modulation.


2013 ◽  
Vol 23 (41) ◽  
pp. 5150-5158 ◽  
Author(s):  
Ruiyi Chen ◽  
Suprem R. Das ◽  
Changwook Jeong ◽  
Mohammad Ryyan Khan ◽  
David B. Janes ◽  
...  

2013 ◽  
Vol 24 (33) ◽  
pp. 335202 ◽  
Author(s):  
Siwei Zhu ◽  
Yuan Gao ◽  
Bin Hu ◽  
Jia Li ◽  
Jun Su ◽  
...  

2016 ◽  
Vol 27 (44) ◽  
pp. 445708 ◽  
Author(s):  
Orcun Ergun ◽  
Sahin Coskun ◽  
Yusuf Yusufoglu ◽  
Husnu Emrah Unalan

2017 ◽  
Vol 55 (10) ◽  
pp. 1680-1686 ◽  
Author(s):  
Recep Yuksel ◽  
Emre Ataoglu ◽  
Janset Turan ◽  
Ece Alpugan ◽  
Serife Ozdemir Hacioglu ◽  
...  

2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Muhammad Naqi ◽  
Kyung Hwan Choi ◽  
Hocheon Yoo ◽  
Sudong Chae ◽  
Bum Jun Kim ◽  
...  

AbstractLow-temperature-processed semiconductors are an emerging need for next-generation scalable electronics, and these semiconductors need to feature large-area fabrication, solution processability, high electrical performance, and wide spectral optical absorption properties. Although various strategies of low-temperature-processed n-type semiconductors have been achieved, the development of high-performance p-type semiconductors at low temperature is still limited. Here, we report a unique low-temperature-processed method to synthesize tellurium nanowire networks (Te-nanonets) over a scalable area for the fabrication of high-performance large-area p-type field-effect transistors (FETs) with uniform and stable electrical and optical properties. Maximum mobility of 4.7 cm2/Vs, an on/off current ratio of 1 × 104, and a maximum transconductance of 2.18 µS are achieved. To further demonstrate the applicability of the proposed semiconductor, the electrical performance of a Te-nanonet-based transistor array of 42 devices is also measured, revealing stable and uniform results. Finally, to broaden the applicability of p-type Te-nanonet-based FETs, optical measurements are demonstrated over a wide spectral range, revealing an exceptionally uniform optical performance.


2020 ◽  
Vol 25 ◽  
pp. 101551
Author(s):  
Dengyang Li ◽  
Tao Li ◽  
Junli Zhang ◽  
Qing Xu ◽  
Hao-Yang Mi ◽  
...  

2017 ◽  
Vol 7 (5) ◽  
pp. 1679 ◽  
Author(s):  
J. T. Hong ◽  
S. J. Park ◽  
Ji-yong Park ◽  
Soonil Lee ◽  
Y. H. Ahn

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