Electron-pinned defect dipoles in (Li, Al) co-doped ZnO ceramics with colossal dielectric permittivity

2020 ◽  
Vol 8 (9) ◽  
pp. 4764-4774 ◽  
Author(s):  
Dong Huang ◽  
Wen-Long Li ◽  
Zhi-Fu Liu ◽  
Yong-Xiang Li ◽  
Cuong Ton-That ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Dielectric Loss ◽  
Dielectric Permittivity ◽  
Co Doping ◽  
Low Dielectric ◽  
Doped Zno ◽  
Colossal Dielectric Constant ◽  
Zno Ceramics ◽  
Co Doped

The colossal dielectric constant and relatively low dielectric loss (εr = 9862 and tan δ = 0.159) in ZnO ceramics have been achieved via acceptor and donor co-doping method.

High dielectric constant and low dielectric loss of Y/Mn co-doped BST@ZrO2/PVDF composite films for wearable capacitor applications

2020 ◽  
pp. 2151004
Author(s):  
Jingru Zhang ◽  
Ruoxin Xu ◽  
Xiao Han ◽  
Zhiang Zhang ◽  
Lili Zhao ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Dielectric Loss ◽  
Polyvinylidene Fluoride ◽  
High Dielectric Constant ◽  
Composite Films ◽  
Temperature Stability ◽  
Co Doping ◽  
Low Dielectric ◽  
High Dielectric ◽  
Co Doped

In order to develop infinite capacitive materials with high dielectric constant and low dielectric loss, influences of Y/Mn co-doping and ZrO2 coating on the dielectric properties of barium strontium tinanate/polyvinylidene fluoride (BST/PVDF) composite films were systematically investigated with fixing Y concentration as 0.3 at.% and varying Mn concentration from 1 at.% to 4 at.%. The experimental results show that the dielectric constant of BST@ZrO2/PVDF composite increases by 50% relative to BST/PVDF and the dielectric loss is evidently depressed. In comparison with BST@ZrO2/PVDF sample, furthermore, the dielectric constant of Y/Mn co-doped BST@ZrO2/PVDF samples increases by about 60% and the dielectric loss further reduces at 1 kHz. The promoted dielectric performances of composite originate from the space charge separation formed by Y/Mn co-doping and the limitation of electronic mobility by coated ZrO2. Y/Mn co-doped BST@ZrO2/PVDF composite film with 3% Mn has a dielectric constant of 37.9, a dielectric loss of 0.0117, superior dielectric temperature stability (3.1% from -5[Formula: see text]C to 45[Formula: see text]C at 1 kHz), and a discharged energy density of 5.67 J/cm3 at 600 kV/cm. The simultaneous optimization of dielectric constant and dielectric loss of BST/PVDF composite is realized in this experiment. The superior dielectric temperature stability suggests the application potential of Y/Mn co-doped BST@ZrO2/PVDF as wearable capacitors.

Colossal dielectric permittivity in Co-doped ZnO ceramics prepared by a pressure-less sintering method

2018 ◽  
Vol 20 (45) ◽  
pp. 28712-28719 ◽  
Author(s):  
H. V. S. Pessoni ◽  
P. Banerjee ◽  
A. Franco
Keyword(s):  
Dielectric Properties ◽  
Dielectric Permittivity ◽  
Single Phase ◽  
Solid State Reaction Method ◽  
Spectroscopic Studies ◽  
Reaction Method ◽  
Doped Zno ◽  
Sintering Method ◽  
Zno Ceramics ◽  
Co Doped

Dielectric properties and impedance spectroscopic studies of single phase Zn1−xCoxO (0 ≤ x ≤ 0.05) ceramics, synthesized by a pressure-less solid state reaction method, have been carried out to investigate the origin of colossal dielectric permittivity (CP), ε′ ∼ 105, in a wide frequency (2 × 101–2 × 106 Hz) range.

Skin–core structured fluorinated MWCNTs: a nanofiller towards a broadband dielectric material with a high dielectric constant and low dielectric loss

2018 ◽  
Vol 6 (9) ◽  
pp. 2370-2378 ◽  
Author(s):  
Yang Liu ◽  
Cheng Zhang ◽  
Benyuan Huang ◽  
Xu Wang ◽  
Yulong Li ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Dielectric Loss ◽  
High Dielectric Constant ◽  
Dielectric Material ◽  
Epoxy Composite ◽  
Low Dielectric ◽  
High Dielectric

A novel skin–core structured fluorinated MWCNT nanofiller was prepared to fabricate epoxy composite with broadband high dielectric constant and low dielectric loss.

Transport mechanisms in Co-doped ZnO (ZCO) and H-irradiated ZCO polycrystalline thin films

2021 ◽  
Vol 23 (3) ◽  
pp. 2368-2376
Author(s):  
A. Di Trolio ◽  
A. Amore Bonapasta ◽  
C. Barone ◽  
A. Leo ◽  
G. Carapella ◽  
...  
Keyword(s):  
Thin Films ◽  
Opposite Effect ◽  
Transport Mechanisms ◽  
Co Doping ◽  
Polycrystalline Thin Films ◽  
Doped Zno ◽  
Co Doped

Co doping increases the ZnO resistivity (ρ) at high T (HT), whereas it has an opposite effect at low T (LT). H balances the Co effects by neutralizing the ρ increase at HT and strengthening its decrease at LT.

scholarly journals Crown ether-containing polyimides with high dielectric constant

RSC Advances ◽  
2017 ◽  
Vol 7 (38) ◽  
pp. 23309-23312 ◽  
Author(s):  
Ting Yang ◽  
Wenhui Xu ◽  
Xinwen Peng ◽  
Haoqing Hou
Keyword(s):  
Dielectric Constant ◽  
Dielectric Loss ◽  
Crown Ether ◽  
High Dielectric Constant ◽  
Low Dielectric ◽  
High Dielectric

Crown ether-containing polyimides possess high dielectric constant and low dielectric loss, without sacrificing other properties.

Effect of cobalt doping on microstructures and dielectric properties of ZnO

2019 ◽  
Vol 97 (3) ◽  
pp. 227-232 ◽  
Author(s):  
Ye Zhao ◽  
Fan Tong ◽  
Mao Hua Wang
Keyword(s):  
Zno Nanoparticles ◽  
Sol Gel ◽  
Hexagonal Wurtzite Structure ◽  
Sem Analysis ◽  
Co Doping ◽  
In Doping ◽  
Zno Powders ◽  
Doped Zno ◽  
Zno Crystal ◽  
Co Doped

Pure and cobalt-doped ZnO nanoparticles (2.5, 5, 7.5, and 10 atom % Co) are synthesized by sol–gel method. The as-synthesized nanoparticles are characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), and field emission scanning electron microscopy (FE-SEM) analysis. The nanoparticles of 0, 2.5, and 5 atom % Co-doped ZnO exhibited hexagonal wurtzite structure and have no other phases. Moreover, the (101) diffraction peaks position of Co-doped ZnO shift toward a smaller value of diffraction angle compared with pure ZnO powders. The results confirm that Co ions were well incorporated into ZnO crystal lattice. Simultaneously, Co doping also inhibited the growth of particles, and the crystallite size decreased from 43.11 nm to 36.63 nm with the increase in doping concentration from 0 to 10 atom %. The values of the optical band gap of all Co-doped ZnO nanoparticles gradually decreased from 3.09 eV to 2.66 eV with increasing Co content. Particular, the dielectric constant of all Co-doped ZnO ceramics gradually increased from 1.62 × 103 to 20.52 × 103, and the dielectric loss decreased from 2.36 to 1.28 when Co content increased from 0 to 10 atom %.

Surface barrier layer effect in (In + Nb) co-doped TiO2 ceramics: An alternative route to design low dielectric loss

2017 ◽  
Vol 100 (4) ◽  
pp. 1452-1459 ◽  
Author(s):  
Theeranuch Nachaithong ◽  
Pinit Kidkhunthod ◽  
Prasit Thongbai ◽  
Santi Maensiri
Keyword(s):  
Dielectric Loss ◽  
Barrier Layer ◽  
Surface Barrier ◽  
Alternative Route ◽  
Doped Tio2 ◽  
Low Dielectric ◽  
Layer Effect ◽  
Co Doped
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