Suppression of hydroxylation on the surface of colloidal quantum dots to enhance the open-circuit voltage of photovoltaics

2020 ◽  
Vol 8 (9) ◽  
pp. 4844-4849 ◽  
Author(s):  
Jung Hoon Song ◽  
Taewan Kim ◽  
Taiho Park ◽  
Sohee Jeong

Suppression of hydroxylation on quantum dot surfaces demonstrated a solar cell efficiency of 11.6% with the synthesis cost down up to 59.3%.

Author(s):  
H. Bitam ◽  
B. Hadjoudja ◽  
Beddiaf Zaidi ◽  
C. Shakher ◽  
S. Gagui ◽  
...  

Due to increased energy intensive human activities resulting accelerated demand for electric power coupled with occurrence of natural disasters with increased frequency, intensity, and duration, it becomes essential to explore and advance renewable energy technology for sustainability of the society. Addressing the stated problem and providing a radical solution has been attempted in this study. To harvest the renewable energy, among variety of solar cells reported, a composite a-Si/CZTS photovoltaic devices has not yet been investigated. The calculated parameters for solar cell based on the new array of layers consisting of a-Si/CZTS are reported in this study. The variation of i) solar cell efficiency as a function of CZTS layer thickness, temperature, acceptor, and donor defect concentration; ii) variation of the open circuit current density as a function of temperature, open circuit voltage; iii) variation of open circuit voltage as a function of the thickness of the CZTS layer has been determined. There has been no reported study on a-Si/CZTS configuration-based solar cell, analysis of the parameters, and study to address the challenges imped efficiency of the photovoltaic device and the same has been discussed in this work. The value of the SnO2/a-Si/CZTS solar cells obtained from the simulation is 23.9 %.


2019 ◽  
Vol 24 (6) ◽  
pp. 110
Author(s):  
Adnan Alwan Mouhammed ◽  
Ayed N. Saleh

The effect of Ga2O3 thickness on CdTe cells was studied using the SCAPS-1D simulator. The best solar cell efficiency (14.65%) was found at the thickness of the gallium oxide layer (1-10nm) and the cell efficiency (η) decrease with an increase in the thickness of the oxide layer and the decrease of the fill factor, thus decreasing the voltage current (I-V) and decreasing the current of the short circuit (Isc). The value of the open circuit voltage (VOC) is approximately constant and at 0.76V. The optical properties of the cell of quantitative efficiency are 86% and decrease within 18nm   http://dx.doi.org/10.25130/tjps.24.2019.116


Energies ◽  
2021 ◽  
Vol 14 (6) ◽  
pp. 1684
Author(s):  
Alessandro Romeo ◽  
Elisa Artegiani

CdTe is a very robust and chemically stable material and for this reason its related solar cell thin film photovoltaic technology is now the only thin film technology in the first 10 top producers in the world. CdTe has an optimum band gap for the Schockley-Queisser limit and could deliver very high efficiencies as single junction device of more than 32%, with an open circuit voltage of 1 V and a short circuit current density exceeding 30 mA/cm2. CdTe solar cells were introduced at the beginning of the 70s and they have been studied and implemented particularly in the last 30 years. The strong improvement in efficiency in the last 5 years was obtained by a new redesign of the CdTe solar cell device reaching a single solar cell efficiency of 22.1% and a module efficiency of 19%. In this paper we describe the fabrication process following the history of the solar cell as it was developed in the early years up to the latest development and changes. Moreover the paper also presents future possible alternative absorbers and discusses the only apparently controversial environmental impacts of this fantastic technology.


2013 ◽  
Vol 1551 ◽  
pp. 137-142
Author(s):  
Neil S. Beattie ◽  
Guillaume Zoppi ◽  
Ian Farrer ◽  
Patrick See ◽  
Robert W. Miles ◽  
...  

ABSTRACTThe device performance of GaAs p-i-n solar cells containing stacked layers of self-assembled InAs quantum dots is investigated. The solar cells demonstrate enhanced external quantum efficiency below the GaAs band gap relative to a control device without quantum dots. This is attributed to the capture of sub-band gap photons by the quantum dots. Analysis of the current density versus voltage characteristic for the quantum dot solar cell reveals a decrease in the series resistance as the device area is reduce from 0.16 cm2 to 0.01 cm2. This is effect is not observed in control devices and is quantum dot related. Furthermore, low temperature measurements of the open circuit voltage for both quantum dot and control devices provide experimental verification of the conditions required to realise an intermediate band gap solar cell.


Author(s):  
Hisaaki Nishimura ◽  
Takaya Maekawa ◽  
Kazushi Enomoto ◽  
Naoteru Shigekawa ◽  
Tomomi Takagi ◽  
...  

The sensitivity of Si solar cells to the UV portion of the solar spectrum is low, and must be increased to further improve their efficiencies.


Nano Letters ◽  
2011 ◽  
Vol 11 (6) ◽  
pp. 2311-2317 ◽  
Author(s):  
Kimberly A. Sablon ◽  
John W. Little ◽  
Vladimir Mitin ◽  
Andrei Sergeev ◽  
Nizami Vagidov ◽  
...  

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