The manipulation of substitutional defects for realizing high thermoelectric performance in Mg3Sb2-based Zintl compounds
2019 ◽
Vol 7
(33)
◽
pp. 19316-19323
◽
By optimizing the concentration of the substitutional defect PrMg1, Mg3.2Pr0.02Sb1.5Bi0.5 exhibits a peak zT value of 1.70 at 725 K.
2016 ◽
Vol 4
(40)
◽
pp. 15464-15470
◽
1981 ◽
Vol 42
(C6)
◽
pp. C6-899-C6-901
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