7.5% n–i–p Sb2Se3 solar cells with CuSCN as a hole-transport layer

2019 ◽  
Vol 7 (16) ◽  
pp. 9665-9672 ◽  
Author(s):  
Kanghua Li ◽  
Siyu Wang ◽  
Chao Chen ◽  
Rokas Kondrotas ◽  
Manchen Hu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Grain Boundary ◽  
Surface Recombination ◽  
Hole Transport ◽  
Transport Layer ◽  
Back Surface ◽  
Hole Transport Layer

CuSCN suppresses the back surface recombination and induces grain boundary inversion through Cu diffusion to achieve 7.5% n–i–p Sb2Se3 solar cells.

Graded NixAlyO hole transport layer in silicon solar cells

2020 ◽  
Author(s):  
Samed Halilov ◽  
Merid Belayneh ◽  
Md Anower Hossain ◽  
Bram Hoex ◽  
Amir Abdallah ◽  
...  
Keyword(s):  
Solar Cells ◽  
Hole Transport ◽  
Transport Layer ◽  
Silicon Solar Cells ◽  
Hole Transport Layer

scholarly journals Solid-State Solar Cells Based on TiO2 Nanowires and CH3NH3PbI3 Perovskite

Coatings ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 404
Author(s):  
Abdul Sami ◽  
Arsalan Ansari ◽  
Muhammad Dawood Idrees ◽  
Muhammad Musharraf Alam ◽  
Junaid Imtiaz
Keyword(s):  
Solar Cells ◽  
Solid State ◽  
Light Trapping ◽  
Active Material ◽  
Perovskite Solar Cells ◽  
Hole Transport ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Hole Transport Layer ◽  
Tio2 Nanowires

Perovskite inorganic-organic solar cells are fabricated as a sandwich structure of mesostructured TiO2 as electron transport layer (ETL), CH3NH3PbI3 as active material layer (AML), and Spiro-OMeTAD as hole transport layer (HTL). The crystallinity, structural morphology, and thickness of TiO2 layer play a crucial role to improve the overall device performance. The randomly distributed one dimensional (1D) TiO2 nanowires (TNWs) provide excellent light trapping with open voids for active filling of visible light absorber compared to bulk TiO2. Solid-state photovoltaic devices based on randomly distributed TNWs and CH3NH3PbI3 are fabricated with high open circuit voltage Voc of 0.91 V, with conversion efficiency (CE) of 7.4%. Mott-Schottky analysis leads to very high built-in potential (Vbi) ranging from 0.89 to 0.96 V which indicate that there is no depletion layer voltage modulation in the perovskite solar cells fabricated with TNWs of different lengths. Moreover, finite-difference time-domain (FDTD) analysis revealed larger fraction of photo-generated charges due to light trapping and distribution due to field convergence via guided modes, and improved light trapping capability at the interface of TNWs/CH3NH3PbI3 compared to bulk TiO2.

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