scholarly journals Electron-enriched thione enables strong Pb–S interaction for stabilizing high quality CsPbI3 perovskite films with low-temperature processing

2020 ◽  
Vol 11 (12) ◽  
pp. 3132-3140 ◽  
Author(s):  
Xiaojia Xu ◽  
Hao Zhang ◽  
Erpeng Li ◽  
Pengbin Ru ◽  
Han Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Low Temperatures ◽  
High Quality ◽  
Low Temperature Processing

A neutral molecular additive of 4(1H)-pyridinethione (4-PT) is used for growing high quality black-phase CsPbI3 thin films at low temperatures.

High Density Plasma Processing of Microcrystalline Si Thin Films

2005 ◽  
Vol 862 ◽  
Author(s):  
P. C. Joshi ◽  
A. T. Voutsas ◽  
J. W. Hartzell
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Volume Fraction ◽  
Average Crystallite Size ◽  
High Density ◽  
High Quality ◽  
Low Temperature Processing ◽  
Interfacial Characteristics ◽  
Ratio Range ◽  
Density Plasma

AbstractIn the present work, we report on the fabrication of high quality microcrystalline Si thin films by high-density PECVD technique. The typical deposition rate of the HD-PECVD μ-Si thin films was greater than 350 Å/min in the H2/SiH4 ratio range of 20-100. For a 150-nm-thick film deposited at a H2/SiH4 ratio of 20, the typical microcrystalline volume fraction and the average crystallite size corresponding to <111> orientation were 75% and 160 Å, respectively. The observed growth and properties of the μ-Si thin films show the potential of the high-density PECVD technique for the low temperature processing of high quality films with superior control of bulk and interfacial characteristics.

Low-temperature Preparation of Crystallized Zirconia Films by ECR Plasma MOCVD

2005 ◽  
Vol 890 ◽  
Author(s):  
Hiroshi Masumoto ◽  
Takashi Goto
Keyword(s):  
Magnetic Field ◽  
Low Temperature ◽  
Low Temperatures ◽  
Monoclinic Zirconia ◽  
High Quality ◽  
Ion Chamber ◽  
Ecr Plasma ◽  
Low Temperature Preparation ◽  
Oxide Ion ◽  
Zirconia Films

ABSTRACTIt is known that zirconia has excellent thermal and chemical stability, and oxide ion conduction. Therefore, YSZ is expected to be used as oxide ion conducting materials, optical mirror materials, catalytic materials and heat-resistant materials. Zirconia films have been fabricated by PVD (ex. sputtering and laser-ablation), chemical vapor deposition (CVD) and sol-gel methods. CVD is capable to prepare high quality zirconia films with excellent conformal coverage; however, deposition temperature of conventional CVD was usually high than PVD. On the other hand, an electron cyclotron resonance (ECR) plasma is high-activity plasma and high quality crystalline films can be obtained at low temperature by using ECR plasma. In the present study, zirconia thin films were prepared at low temperatures on quartz, polycarbonate and polyimide substrates by ECR plasma MOCVD.Zr-hexafluoroacetylacetonato solution was used as a precursor. The source, which was placed in a glass bubbler, was carried into a reactor by Ar gas. A microwave (2.45 GHz, 500 W) was introduced into the ion chamber through a rectangular wave guide. A magnetic field (875 Gauss) was applied to the ion chamber to satisfy the ECR condition. A mirror-type magnetic field (450 Gauss at the substrate stage) was applied in order to raise a plasma density, which results in an increase of the deposition rates of films. Substrate temperature (Ts) was from 30 to 700 C by water-cooling holder and infrared lamp heater. Microwave power was changed from 0 to 900 W. The deposition time was from 30 to 120 minutes.Cubic, monoclinic and tetragonal zirconia films were obtained over Ts=400 C, and cubic and monoclinic zirconia films were obtained below Ts= C. Cubic and monoclinic zirconia films were also obtained at no heating. The deposition rate increased from 10 to 20 nm/min with increasing Ts from no heating to 600 C. Crystallized zirconia films were obtained on polycarbonate and polyimide substrates at no heating. The ECR plasma was significantly effective to prepare crystallized zirconia films at low temperatures.

Dielectric Loss in Li- and Na-Swept α-Quartz and the Effect of Irradiation

1983 ◽  
Vol 24 ◽  
Author(s):  
J. Toulouse ◽  
A.S. Nowick
Keyword(s):  
Dielectric Loss ◽  
Low Temperature ◽  
Low Temperatures ◽  
Quantum Effects ◽  
Frequency Stability ◽  
Distorted Tetrahedron ◽  
High Quality ◽  
Quartz Crystals ◽  
Alkali Ions ◽  
Synthetic Crystals

ABSTRACTAlkali ions, which compensate for substitional Al3+, play an important role in the frequency stability of α-quartz crystals. In this work, low temperature dielectricloss measurements (between 2.9 and 300 K) are carried out on crystals that have been “swept” so as to introduce either Li+ or Na+. High quality synthetic crystals as well as natural crystals are employed. The well known loss peaks due to Al-Na pairs are further explored and similar peaks due to Al-Li are sought after but not found. It is concluded that the Al-Li pair is oriented along the C2 -axis of the A104 distorted tetrahedron. After irradiation, large peaks are observed at very low temperatures both in Li+- and Na+-containing crystals. These peaks, which are distorted below ∼6 K due to the onset of quantum effects, may originate in alkali centers produced when alkali ions are liberated by the irradiation.

Molecular beam epitaxy of high-quality CuI thin films on a low temperature grown buffer layer

2020 ◽  
Vol 116 (19) ◽  
pp. 192105 ◽  
Author(s):  
S. Inagaki ◽  
M. Nakamura ◽  
N. Aizawa ◽  
L. C. Peng ◽  
X. Z. Yu ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Buffer Layer ◽  
Molecular Beam ◽  
High Quality

Low-Temperature Processing Using Triple Alkoxide Precursors for Layer-Structured Perovskite Thin Films: Preparation and Characterization of Mbi2Ta2O9 (M: Ca or Ba) Thin Films

1999 ◽  
Vol 596 ◽  
Author(s):  
K. Kato
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Electrical Properties ◽  
Low Temperature ◽  
Surface Topography ◽  
Annealing Temperature ◽  
Low Temperature Processing ◽  
Deposited Films ◽  
Alkoxide Precursors

AbstractCaBi2Ta2O9 and BaBi2Ta2O9 thin films were successfully prepared by using triple alkoxide precursors such as Ca[BiTa(OC2H5)9]2 and Ba[BiTa(OC2H5)9]2, respectively. As-deposited films were amorphous and crystallized below 500°C by rapid thermal annealing in oxygen. The crystallinity improved with annealing temperature. The development of the crystal structure and surface topography of the thin films were investigated. Additionally, some electrical properties were evaluated.

The low temperature processing for removal of metallic bismuth in ferroelectric SrBi2Ta2O9 thin films

1999 ◽  
Vol 140 (1-2) ◽  
pp. 150-155 ◽  
Author(s):  
Jae-Sun Kim ◽  
Cheol-Hoon Yang ◽  
Soon-Gil Yoon ◽  
Won-Youl Choi ◽  
Ho-Gi Kim
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Metallic Bismuth ◽  
Low Temperature Processing
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