scholarly journals Resistive switching effect and magnetic properties of iron oxide nanoparticles embedded-polyvinyl alcohol film

RSC Advances ◽  
2020 ◽  
Vol 10 (22) ◽  
pp. 12900-12907 ◽  
Author(s):  
Hai Hung Nguyen ◽  
Hanh Kieu Thi Ta ◽  
Sungkyun Park ◽  
Thang Bach Phan ◽  
Ngoc Kim Pham
Keyword(s):  
Iron Oxide ◽  
Polyvinyl Alcohol ◽  
Iron Oxide Nanoparticles ◽  
Resistive Switching ◽  
Switching Behavior ◽  
Oxide Nanoparticles ◽  
Resistive Switching Behavior ◽  
Bipolar Resistive Switching ◽  
Polyvinyl Alcohol Film ◽  
Resistive Switching Effect

Bipolar resistive switching behavior of iron oxide nanoparticles embedded into polyvinyl alcohol matrix.

scholarly journals Correction: Resistive switching effect and magnetic properties of iron oxide nanoparticles embedded-polyvinyl alcohol film

RSC Advances ◽  
2020 ◽  
Vol 10 (28) ◽  
pp. 16526-16526
Author(s):  
Hai Hung Nguyen ◽  
Hanh Kieu Thi Ta ◽  
Sungkyun Park ◽  
Thang Bach Phan ◽  
Ngoc Kim Pham
Keyword(s):  
Magnetic Properties ◽  
Iron Oxide ◽  
Polyvinyl Alcohol ◽  
Iron Oxide Nanoparticles ◽  
Resistive Switching ◽  
Oxide Nanoparticles ◽  
Switching Effect ◽  
Polyvinyl Alcohol Film ◽  
Resistive Switching Effect

Correction for ‘Resistive switching effect and magnetic properties of iron oxide nanoparticles embedded-polyvinyl alcohol film’ by Hai Hung Nguyen et al., RSC Adv., 2020, 10, 12900–12907.

Resistive Switching of Iron Oxide Nanoparticles in Patterned Array Structure on Flexible Substrate

2013 ◽  
Vol 50 (4) ◽  
pp. 27-31
Author(s):  
J.-D. Kim ◽  
J. W. Yoo ◽  
Y.-J. Baek ◽  
H. J. Kim ◽  
Q. Hu ◽  
...  
Keyword(s):  
Iron Oxide ◽  
Iron Oxide Nanoparticles ◽  
Resistive Switching ◽  
Flexible Substrate ◽  
Oxide Nanoparticles ◽  
Array Structure

scholarly journals Effects of the thickness on resistive switching characteristics of CrOx thin films

2016 ◽  
Vol 19 (2) ◽  
pp. 92-100
Author(s):  
Ngoc Kim Pham ◽  
Thang Bach Phan ◽  
Vinh Cao Tran
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Resistive Switching ◽  
High Reliability ◽  
Switching Behavior ◽  
Ftir Analysis ◽  
Resistive Switching Behavior ◽  
Bipolar Resistive Switching ◽  
Structure Surface ◽  
Switching Characteristics

In this study, we have investigated influences of the thickness on the structure, surface morphology and resistive switching characteristics of CrOx thin films prepared by using DC reactive sputtering technique. The Raman and FTIR analysis revealed that multiphases including Cr2O3, CrO2, Cr8O21... phases coexist in the microstructure of CrOx film. It is noticed that the amount of stoichiometric Cr2O3 phase increased significantly as well as the surface morphology were more visible with less voids and more densed particles with larger thickness films. The Ag/CrOx/FTO devices exhibited bipolar resistive switching behavior and high reliability. The resistive switching ratio has decreased slightly with the thickness increments and was best achieved at CrOx – 100 nm devices.

The Resistive Switching Behavior of ZnO Films Depending on Li Dopant Concentration and Electrode Materials

2016 ◽  
Vol 99 ◽  
pp. 75-80
Author(s):  
Arsen Igityan ◽  
Yevgenia Kafadaryan ◽  
Natella Aghamalyan ◽  
Silva Petrosyan
Keyword(s):  
Resistive Switching ◽  
Electrode Materials ◽  
Switching Behavior ◽  
Zno Films ◽  
Lithium Content ◽  
Resistive Switching Behavior ◽  
Bipolar Resistive Switching ◽  
Glass Substrates ◽  
Ohmic Behavior ◽  
Doped Zno

Lithium (0, 1.0 and 10 at.%)-doped ZnO (LiZnO) polycrystalline thin films were deposited on Pt/SiO2, LaB6/Al2O3, Au/SiO2 and 20 at.% fluorine-doped SnO2(FTO)/glass substrates by an e-beam evaporation method. Metal/LiZnO/Metal sandwich structures were constructed by depositing different top electrodes (Ag, Al and Au) to find memristive characteristics depending on the lithium content and electrode materials. Compared with undoped and 1%Li-doped ZnO devices, the 10 at.%Li-doped ZnO (10LiZnO) device exhibits resistive switching memory. The Ag/10LiZnO/Pt and Ag/10LiZnO/LaB6 memory devices exhibit unipolar resistive switching behavior while bipolar resistive switching in Ag/10LiZnO/FTO, Au/10LiZnO/FTO and Al/10LiZnO/LaB6 structures is revealed. The dominant conduction mechanisms are explained in terms of Ohmic behavior, space charge limited current (SCLC) and Schottky emission for the URS and BRS behaviors.

scholarly journals Resistive Switching Behavior of Magnesium Zirconia Nickel Nanorods

Materials ◽  
2020 ◽  
Vol 13 (12) ◽  
pp. 2755
Author(s):  
Tzu-Han Su ◽  
Ke-Jing Lee ◽  
Li-Wen Wang ◽  
Yu-Chi Chang ◽  
Yeong-Her Wang
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Sol Gel ◽  
Switching Behavior ◽  
Resistive Memory ◽  
Scanning Electron Microscope Image ◽  
Resistive Switching Behavior ◽  
Bipolar Resistive Switching ◽  
Electron Microscope Image ◽  
Scanning Electron

To effectively improve the uniformity of switching behavior in resistive switching devices, this study developed magnesium zirconia nickel (MZN) nanorods grown on ITO electrodes through hydrothermal method. The field emission scanning electron microscope image shows the NR formation. Al/MZN NR/ITO structure exhibits forming-free and bipolar resistive switching behaviors. MZN NRs have relatively higher ON/OFF ratio and better uniformity compared with MZN thin film. The superior properties of MZN NRs can be attributed to its distinct geometry, which leads to the formation of straight and extensible conducting filaments along the direction of MZN NR. The results suggest the possibility of developing sol–gel NR-based resistive memory devices.

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