scholarly journals Thickness-dependent fast wetting transitions due to the atomic layer deposition of zinc oxide on a micro-pillared surface

RSC Advances ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 1120-1126 ◽  
Author(s):  
Libing Duan ◽  
Xiangyang Ji ◽  
Yajie Yang ◽  
Sihang Yang ◽  
Xinjun Lv ◽  
...  

Smart surfaces promote the fundamental understanding of wetting and are widely used in practical applications for energy and water collection.

Author(s):  
Sungho Park ◽  
Byung Jun Kim ◽  
Tae Yeon Kim ◽  
Eui Young Jung ◽  
Kyu-Myung Lee ◽  
...  

We have developed a visible-light phototransistor with excellent photodetection characteristics and stability via atomic layer deposition (ALD) to add a thin layer of aluminum oxide (Al2O3) to quantum dot (QD)/zinc oxide (ZnO) films.


2018 ◽  
Vol 122 (47) ◽  
pp. 27044-27058 ◽  
Author(s):  
Timo Weckman ◽  
Mahdi Shirazi ◽  
Simon D. Elliott ◽  
Kari Laasonen

2011 ◽  
Vol 1315 ◽  
Author(s):  
Paul R. Chalker ◽  
Paul A. Marshall ◽  
Simon Romani ◽  
Matthew J. Rosseinsky ◽  
Simon Rushworth ◽  
...  

ABSTRACTThin transparent conducting oxide (TCO) films of gallium-doped zinc oxide have been deposited on glass substrates by atomic layer deposition (ALD) using diethyl zinc, triethyl gallium and water vapour as precursors. The gallium-doped zinc oxide films were deposited over the temperature range 100-350°C. Transmission electron microscopy reveals that the as-deposited films are polycrystalline in character. The electrical resistivity of the gallium-doped zinc oxide films was evaluated using four-point probe and contactless measurement methods as a function of film thickness. The lowest sheet resistance of 16 Ω/☐ was measured from a film thickness of 400nm and a gallium content of 5 atomic percent. The electron Hall mobility of this film was 12.3 cm2/Vs. The visible transmittance of the films was 78% with a haze of 0.2%.


2013 ◽  
Vol 123 (5) ◽  
pp. 899-903 ◽  
Author(s):  
R. Ratajczak ◽  
A. Stonert ◽  
E. Guziewicz ◽  
S. Gierałtowska ◽  
T.A. Krajewski ◽  
...  

2008 ◽  
Vol 53 (6) ◽  
pp. 3287-3295 ◽  
Author(s):  
Sunyeol Jeon ◽  
Seokhwan Bang ◽  
Seungjun Lee ◽  
Semyung Kwon ◽  
Wooho Jeong ◽  
...  

Nanomaterials ◽  
2020 ◽  
Vol 10 (8) ◽  
pp. 1496 ◽  
Author(s):  
Dominik Benz ◽  
Hao Van Bui ◽  
Hubertus T. Hintzen ◽  
Michiel T. Kreutzer ◽  
J. Ruud van Ommen

Photocatalysts for water purification typically lack efficiency for practical applications. Here we present a multi-component (Pt:SiO2:TiO2(P25)) material that was designed using knowledge of reaction mechanisms of mono-modified catalysts (SiO2:TiO2, and Pt:TiO2) combined with the potential of atomic layer deposition (ALD). The deposition of ultrathin SiO2 layers on TiO2 nanoparticles, applying ALD in a fluidized bed reactor, demonstrated in earlier studies their beneficial effects for the photocatalytic degradation of organic pollutants due to more acidic surface Si–OH groups which benefit the generation of hydroxyl radicals. Furthermore, our investigation on the role of Pt on TiO2(P25), as an improved photocatalyst, demonstrated that suppression of charge recombination by oxygen adsorbed on the Pt particles, reacting with the separated electrons to superoxide radicals, acts as an important factor for the catalytic improvement. Combining both materials into the resulting Pt:SiO2:TiO2(P25) nanopowder exceeded the dye degradation performance of both the individual SiO2:TiO2(P25) (1.5 fold) and Pt:TiO2(P25) (4-fold) catalysts by 6-fold as compared to TiO2(P25). This approach thus shows that by understanding the individual materials’ behavior and using ALD as an appropriate deposition technique enabling control on the nano-scale, new materials can be designed and developed, further improving the photocatalytic activity. Our research demonstrates that ALD is an attractive technology to synthesize multicomponent catalysts in a precise and scalable way.


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