scholarly journals In situ synthesis of monolayer graphene on silicon for near-infrared photodetectors

RSC Advances ◽  
2019 ◽  
Vol 9 (64) ◽  
pp. 37512-37517 ◽  
Author(s):  
Pengcheng Xiang ◽  
Gang Wang ◽  
Siwei Yang ◽  
Zhiduo Liu ◽  
Li Zheng ◽  
...  
Keyword(s):  
Carbon Source ◽  
Thermal Annealing ◽  
Near Infrared ◽  
Annealing Process ◽  
In Situ Synthesis ◽  
Monolayer Graphene ◽  
Direct Integration ◽  
Si Substrate ◽  
Thermal Annealing Process

Direct integration of monolayer graphene on a silicon (Si) substrate is realized by a simple thermal annealing process, involving a top copper (Cu) layer as the catalyst and an inserted polymethylmethacrylate (PMMA) as the carbon source.

scholarly journals Preparation of large-area ultrathin carbon semiconductors converted from conjugated microporous polymer films

RSC Advances ◽  
2019 ◽  
Vol 9 (30) ◽  
pp. 17399-17404 ◽  
Author(s):  
Shang Ju ◽  
Yamei Ding ◽  
Yuhang Yin ◽  
Shuai Cheng ◽  
Xiangjing Wang ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Polymer Films ◽  
Carbon Dots ◽  
Annealing Process ◽  
Large Area ◽  
Conjugated Microporous Polymer ◽  
Microporous Polymer ◽  
Thermal Annealing Process

Large-area carbon semiconductors were prepared by combining the in situ polymerization with thermal annealing process. Moreover, a photodetector based on carbon dots decorated carbon semiconductors was fabricated.

Facile in situ synthesis of ultrasmall near-infrared-emitting gold glyconanoparticles with enhanced cellular uptake and tumor targeting

Nanoscale ◽  
2019 ◽  
Vol 11 (35) ◽  
pp. 16336-16341 ◽  
Author(s):  
Yaping Wang ◽  
Shufeng Ma ◽  
Zhiyi Dai ◽  
Zhili Rong ◽  
Jinbin Liu
Keyword(s):  
Cellular Uptake ◽  
Tumor Targeting ◽  
Near Infrared ◽  
In Situ Synthesis ◽  
Targeting Efficiency ◽  
Gold Glyconanoparticles

Ultrasmall gold glyconanoparticles with enhanced tumor-targeting efficiency and efficient clearance through both renal and hepatobiliary pathways.

Hydrogen Behavior in PECVD Nitride by SiH4 & ND3 During RTA

1996 ◽  
Vol 424 ◽  
Author(s):  
S. S. He ◽  
V. L. Shannon ◽  
T. Nguyen
Keyword(s):  
Silicon Nitride ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Process ◽  
Rapid Thermal Annealing Process ◽  
Wave Numbers ◽  
Thermal Annealing Process

AbstractPECVD silicon nitride was deposited by silane and deuterium ammonia. Silicon rich and nitrogen rich silicon nitride were deposited by varying the ratio of the SiH4/DH3. From FTIR, we found that the wave numbers of SiD and ND shifted lower when compared to SiH and NH bond in the NH3 nitride. In Si-rich nitride, both Si-H and Si-D bonds were found, which is different from N-rich nitride, where only an ND bond was found. Most of the hydrogen in NH(D) comes from the ammonia during PECVD deposition. We found that some of the deuterium exchanges its bonding to silicon from the initial bonding to nitrogen during a rapid thermal annealing process.

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